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Hasan Afzal

Publications and source records attributed to Hasan Afzal.

3 recordsLinked to original sources

Exceptionally Slow, Long Range, and Non-Gaussian Critical Fluctuations Dominate the Charge Density Wave Transition

$(TaSe_4)_2I$ is a well-studied quasi-one-dimensional compound long-known to have a charge-density wave (CDW) transition around 263 K. We argue that the critical fluctuations of the pinned CDW order parameter near the transition can be inferred from the resistance noise on account of their coupling to the dissipative normal carriers. Remarkably, the critical fluctuations of the CDW order parameter are slow enough to survive the thermodynamic limit and dominate the low-frequency resistance noise. The noise variance and relaxation time show rapid growth (critical opalescence and critical slowing down) within a temperature window of $ \varepsilon \approx \pm 0.1$, where $\varepsilon$ is the reduced temperature. This is very wide but consistent with the Ginzburg criterion. We further show that this resistance noise can be quantitatively used to extract the associated critical exponents. Below $|\varepsilon | \lesssim 0.02$, we observe a crossover from mean-field to a fluctuation-dominated regime with the critical exponents taking anomalously low values. The distribution of fluctuations in the critical transition region is skewed and strongly non-Gaussian. This non-Gaussianity is interpreted as the breakdown of the validity of the central limit theorem as the diverging coherence volume becomes comparable to the macroscopic sample size. The large magnitude critical fluctuations observed over an extended temperature range, as well as the crossover from the mean-field to the fluctuation-dominated regime highlight the role of the quasi-one dimensional character in controlling the phase transition.

cond-mat.str-el

Raman signatures of lattice dynamics across inversion symmetry breaking phase transition in quasi-1D compound, (TaSe$_4$)$_3$I

Structural phase transition can occur due to complex mechanisms other than simple dynamical instability, especially when the parent and daughter structure is of low dimension. This article reports such an inversion symmetry-breaking structural phase transition in a quasi-1D compound (TaSe$_4$)$_3$I at T$_S\sim$ 141~K studied by Raman spectroscopy. Our investigation of collective lattice dynamics reveals three additional Raman active modes in the low-temperature non-centrosymmetric structure. Two vibrational modes become Raman active due to the absence of an inversion center, while the third mode is a soft phonon mode resulting from the vibration of Ta atoms along the \{-Ta-Ta-\} chains. Furthermore, the most intense Raman mode display Fano-shaped asymmetry, inferred as the signature of strong electron-phonon coupling. The group theory and symmetry analysis of Raman spectra confirm the displacive-first-order nature of the structural transition. Therefore, our results establish (TaSe$_4)_3$I as a model system with broken inversion symmetry and strong electron-phonon coupling in the quasi-1D regime.

cond-mat.str-el

Enhanced coercivity and emergence of spin cluster glass state in 2D ferromagnetic material Fe3GeTe2

Two-dimensional (2D) van der Waals (vdW) magnetic materials with high coercivity and high $T_\text{C}$ are desired for spintronics and memory storage applications. Fe$_3$GeTe$_2$ (F3GT) is one such 2D vdW ferromagnet with a reasonably high $T_\text{C}$, but with a very low coercive field, $H_\text{c}$ ($\lesssim$100~Oe). Some of the common techniques of enhancing $H_\text{c}$ are by introducing pinning centers, defects, stress, doping, etc. They involve the risk of undesirable alteration of other important magnetic properties. Here we propose a very easy, robust, and highly effective method of phase engineering by altering the sample growth conditions to greatly enhance the intrinsic coercivity (7-10 times) of the sample, without compromising its fundamental magnetic properties ($T_\text{C}\simeq$210K). The phase-engineered sample (F3GT-2) comprises of parent F3GT phase with a small percentage of randomly embedded clusters of a coplanar FeTe (FT) phase. The FT phase serves as both mosaic pinning centers between grains of F3GT above its antiferromagnetic transition temperature ($T_\text{C1}\sim$70~K) and also as anti-phase domains below $T_\text{C1}$. As a result, the grain boundary disorder and metastable nature are greatly augmented, leading to highly enhanced coercivity, cluster spin glass, and meta-magnetic behavior. The enhanced coercivity ($\simeq$1~kOe) makes F3GT-2 much more useful for memory storage applications and is likely to elucidate a new route to tune useful magnetic properties. Moreover, this method is much more convenient than hetero-structure and other cumbersome techniques.

cond-mat.str-el