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Hasnain Ahmad

Publications and source records attributed to Hasnain Ahmad.

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A Keyword-Based Technique to Evaluate Broad Question Answer Script

Evaluation is the method of assessing and determining the educational system through various techniques such as verbal or viva-voice test, subjective or objective written test. This paper presents an efficient solution to evaluate the subjective answer script electronically. In this paper, we proposed and implemented an integrated system that examines and evaluates the written answer script. This article focuses on finding the keywords from the answer script and then compares them with the keywords that have been parsed from both open and closed domain. The system also checks the grammatical and spelling errors in the answer script. Our proposed system tested with answer scripts of 100 students and gives precision score 0.91.

cs.LG

Technology and Performance Benchmarks of IQM's 20-Qubit Quantum Computer

Quantum computing has tremendous potential to overcome some of the fundamental limitations present in classical information processing. Yet, today's technological limitations in the quality and scaling prevent exploiting its full potential. Quantum computing based on superconducting quantum processing units (QPUs) is among the most promising approaches towards practical quantum advantage. In this article the basic technological approach of IQM Quantum Computers is described covering both the QPU and the rest of the full-stack quantum computer. In particular, the focus is on a 20-qubit quantum computer featuring the Garnet QPU and its architecture, which we will scale up to 150 qubits. We also present QPU and system-level benchmarks, including a median 2-qubit gate fidelity of 99.5% and genuinely entangling all 20 qubits in a Greenberger-Horne-Zeilinger (GHZ) state.

quant-ph

Room And Cryogenic Temperature Behaviour of Magnetic Sensors Based on Gan/Si Single Saw Resonators

This work analyzes resonance frequency shift vs. the applied magnetic field strength for GHz operating GaN/Si SAW single resonators. Magnetostrictive elements (Ni and CoFeB) were deposited in the proximity of the interdigitated transducers (IDTs) of the resonators (A-type structures) and also over the IDTs, after covering them with a BCB layer to avoid short circuits with IDTs metal (B-type structures). This work targets emerging applications of SAW resonators in driving spin wave pumping and in coupling of surface acoustic waves (SAW) with superconducting Q-bits. Magnetic sensitivity of the SAWs was analyzed at room temperature (RT) and at cryogenic temperatures, obtaining high magnetic sensitivities at 16 K. According to our knowledge, GaN based SAWs are first time used in magnetic applications; also, cryogenic behavior of magnetic SAW sensors is first time analyzed.

cond-mat.mes-hall

Excitation and propagation of spin waves in non-uniformly magnetized waveguides

The characteristics of spin waves in ferromagnetic waveguides with nonuniform magnetization have been investigated for situations where the shape anisotropy field of the waveguide is comparable to the external bias field. Spin-wave generation was realized by the magnetoelastic effect by applying normal and shear strain components, as well as by the Oersted field emitted by an inductive antenna. The magnetoelastic excitation field has a nonuniform profile over the width of the waveguide because of the nonuniform magnetization orientation, whereas the Oersted field remains uniform. Using micromagnetic simulations, we indicate that both types of excitation fields generate quantised width modes with both odd and even mode numbers as well as tilted phase fronts. We demonstrate that these effects originate from the average magnetization orientation with respect to the main axes of the magnetic waveguide. Furthermore, it is indicated that the excitation efficiency of the second-order mode generally surpasses that of the first-order mode due to their symmetry. The relative intensity of the excited modes can be controlled by the strain state as well as by tuning the dimensions of the excitation area. Finally, we demonstrate that the nonreciprocity of spin-wave radiation due to the chirality of an Oersted field generated by an inductive antenna is absent for magnetoelastic spin-wave excitation.

cond-mat.mes-hall

Energy-efficient switching of nanomagnets for computing: Straintronics and other methodologies

The need for increasingly powerful computing hardware has spawned many ideas stipulating, primarily, the replacement of traditional transistors with alternate "switches" that dissipate miniscule amounts of energy when they switch and provide additional functionality that are beneficial for information processing. An interesting idea that has emerged recently is the notion of using two-phase (piezoelectric/magnetostrictive) multiferroic nanomagnets with bistable (or multi-stable) magnetization states to encode digital information (bits), and switching the magnetization between these states with small voltages (that strain the nanomagnets) to carry out digital information processing. The switching delay is ~1 ns and the energy dissipated in the switching operation can be few to tens of aJ, which is comparable to, or smaller than, the energy dissipated in switching a modern-day transistor. Unlike a transistor, a nanomagnet is "non-volatile", so a nanomagnetic processing unit can store the result of a computation locally without refresh cycles, thereby allowing it to double as both logic and memory. These dual-role elements promise new, robust, energy-efficient, high-speed computing and signal processing architectures (usually non-Boolean and often non-von-Neumann) that can be more powerful, architecturally superior (fewer circuit elements needed to implement a given function) and sometimes faster than their traditional transistor-based counterparts. This topical review covers the important advances in computing and information processing with nanomagnets with emphasis on strain-switched multiferroic nanomagnets acting as non-volatile and energy-efficient switches - a field known as "straintronics". It also outlines key challenges in straintronics.

cond-mat.mes-hall

Experimental demonstration of complete 180 degree reversal of magnetization in isolated Co-nanomagnets on a PMN-PT substrate with voltage generated strain

Rotating the magnetization of a shape anisotropic magnetostrictive nanomagnet with voltage-generated stress/strain dissipates much less energy than most other magnetization rotation schemes, but its application to writing bits in non-volatile magnetic memory has been hindered by the fundamental inability of stress/strain to rotate magnetization by full 180 degrees. Normally, stress/strain can rotate the magnetization of a shape anisotropic elliptical nanomagnet by only up to 90 degrees, resulting in incomplete magnetization reversal. Recently, we predicted that applying uniaxial stress sequentially along two different axes that are not collinear with the major or minor axis of the elliptical nanomagnet will rotate the magnetization by full 180 degrees. Here, we demonstrate this complete 180 degree rotation in elliptical Co-nanomagnets (fabricated on a piezoelectric substrate) at room temperature. The two stresses are generated by sequentially applying voltages to two pairs of shorted electrodes placed on the substrate such that the line joining the centers of the electrodes in one pair intersects the major axis of a nanomagnet at ~+30 degrees and the line joining the centers of the electrodes in the other pair intersects at ~ -30 degrees. A finite element analysis has been performed to determine the stress distribution underneath the nanomagnets when one or both pairs of electrodes are activated, and this has been approximately incorporated into a micromagnetic simulation of magnetization dynamics to confirm that the generated stress can produce the observed magnetization rotations. This result portends an extremely energy-efficient non-volatile "straintronic" memory technology predicated on writing bits in nanomagnets with electrically generated stress.

cond-mat.mes-hall

Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, straintronic memory cell for extremely low energy operation

Reversible straintronic switching of a nanomagnet's magnetization between two stable or metastable states promises ultra-energy-efficient non-volatile memory. Here, we report strain-induced magnetization switching in ~300 nm sized FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. Voltage of one polarity applied across the substrate generates compressive strain in a nanomagnet and switches its magnetization to one state, while voltage of the opposite polarity generates tensile strain and switches the magnetization back to the original state, resulting in "non-toggle" switching. The two states can encode the two binary bits, and, using the right voltage polarity, one can write either bit deterministically.

cond-mat.mes-hall

Electric field control of magnetic states in isolated and dipole-coupled FeGa nanomagnets delineated on a PMN-PT substrate

We report observation of a "non-volatile" converse magneto-electric effect in elliptical FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. The nanomagnets are initially magnetized with a magnetic field directed along their nominal major axis and subsequent application of an electric field across the substrate generates strain in the substrate, which is partially transferred to the nanomagnets and rotates the magnetizations of some of them to metastable orientations. There they remain after the field is removed, resulting in "non-volatility". In isolated nanomagnets, the angular separation between the initial and final magnetization directions is < 90 deg, but in a dipole-coupled pair consisting of one "hard" and one "soft" nanomagnet, the soft nanomagnet's magnetization is rotated by > 90 deg from the initial orientation because of the dipole influence of the hard nanomagnet. These effects can be utilized for ultra-energy-efficient logic and memory devices.

cond-mat.mes-hall

Coherent spin transport and suppression of spin relaxation in InSb nanowires with single subband occupancy at room temperature

A longstanding goal of spintronics is to inject, coherently transport, and detect spins in a semiconductor nanowire where a SINGLE quantized subband is occupied at room temperature. Here, we report achieving this goal in 50-nm diameter InSb nanowires by demonstrating both the spin-valve and the Hanle effect. The spin relaxation time in the nanowires was found to have increased by an order of magnitude over what has been reported in bulk and quantum wells due to the suppression of D'yakonov-Perel' spin relaxation as a result of single subband occupancy. These experiments raise hopes for the realization of a room-temperature Datta-Das spin transistor.

cond-mat.mes-hall