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Hawoong Hong

Publications and source records attributed to Hawoong Hong.

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In-situ scattering studies of superconducting vacancy-ordered monoclinic TiO thin films

We investigate the structural and transport properties of vacancy-ordered monoclinic superconducting $\mathrm{TiO}$ thin films grown by molecular beam epitaxy. The evolution of the crystal structure during growth is monitored by in-situ synchrotron X-ray diffraction. Long-range ordering of Ti and O vacancies in the disordered cubic phase stabilizes the vacancy-ordered monoclinic TiO phase. The reduced structural disorder arising from vacancy-ordering is correlated with a superconductor-metal transition (SMT) in contrast to the superconductor-insulator transition (SIT) observed in cubic TiO, orthorhombic $Ti_2O_3$, and the Magneli $γ-Ti_3O_5$ and $γ-Ti_4O_7$ phase. Magnetoresistance measurements for the SIT phases indicate superconducting fluctuations persisting in the normal phase. These results confirm the role of disorder related to Ti and O vacancies and structural inhomogeneity in determining the electronic properties of the normal state of titanium oxide-based superconductors.

cond-mat.supr-con

In-situ strain tuning of the Dirac surface states in Bi2Se3 films

Elastic strain has the potential for a controlled manipulation of the band gap and spin-polarized Dirac states of topological materials, which can lead to pseudo-magnetic-field effects, helical flat bands and topological phase transitions. However, practical realization of these exotic phenomena is challenging and yet to be achieved. Here, we show that the Dirac surface states of the topological insulator Bi2Se3 can be reversibly tuned by an externally applied elastic strain. Performing in-situ x-ray diffraction and in-situ angle-resolved photoemission spectroscopy measurements during tensile testing of epitaxial Bi2Se3 films bonded onto a flexible substrate, we demonstrate elastic strains of up to 2.1% and quantify the resulting reversible changes in the topological surface state. Our study establishes the functional relationship between the lattice and electronic structures of Bi2Se3 and, more generally, demonstrates a new route toward momentum-resolved mapping of strain-induced band structure changes.

cond-mat.mtrl-sci