arXiv subjects

He Tian

Publications and source records attributed to He Tian.

At least 19 recordsLinked to original sources

arXiv2025

Harnessing the polar vortex motion in oxide heterostructures

Polar topology, an analogue of the magnetic topology, serves as a large playground for exotic physical phenomena with a wide range of multifunctional applications. Polar vortices and skyrmions are representative polar topologies that have been predicted to significantly enhance the functionality and information density of nanoelectronic devices due to their ultrasmall dimensions. Despite these advantages, the practical realization of polar topologies in devices is impeded by the intrinsic challenges associated with their controlled motion and manipulation. Therefore, harnessing vortex manipulation-such as motion, on demand creation, annihilation, and shape transformation-is essential for practical device integration. However, vortex motion is often challenged by intrinsic physical limitations in collective lattice distortions and strong pinning effects from the surrounding environment, which remains elusive. In this study, we present real time observation of vortex motion in PbTiO3/SrTiO3 heterostructures, achieved through the application of localized pulsed electric fields and trailing bias fields from a conductive tip. Notably, the vortices exhibit reversible motion in response to the field direction. Furthermore, by precisely manoeuvring the conductive Atomic-Force-Microscopy tip along specific trajectories, we achieved controlled vortex reshaping, with reconfigured vortices showing remarkable stability over extended periods. This underline physical mechanism is further pinpointed by phase-field simulations, which revealed that the motion of the vortex boundary is controlled through the switching of the zigzag patterns of the vortex core. This study highlights the feasibility of harnessing vortex dynamics through external stimuli, advancing the fundamental physical understanding and prospects for next-generation polar vortex-based nanoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2025

PTST: A polar topological structure toolkit and database

Ferroelectric oxide superlattices with complex topological structures such as vortices, skyrmions, and flux closure domains have garnered significant attention due to their fascinating properties and potential applications. However, progress in this field is often impeded by challenges such as limited data-sharing mechanisms, redundant data generation efforts, high barriers between simulations and experiments, and the underutilization of existing datasets. To address these challenges, we have created the Polar Topological Structure Toolbox and Database(PTST). This community driven repository compiles both standard datasets from high throughput phase field simulations and user submitted nonstandard datasets. The PTST utilizes a Global Local Transformer (GL Transformer) to classify polarization states by dividing each sample into spatial sub blocks and extracting hierarchical features, resulting in ten distinct topological categories. Through the PTST web interface, users can easily retrieve polarization data based on specific parameters or by matching experimental images. Additionally, a Binary Phase Diagram Generator allows users to create strain and electric field phase diagrams within seconds. By providing ready-to-use configurations and integrated machine-learning workflows, PTST significantly reduces computational load, streamlines reproducible research, and promotes deeper insights into ferroelectric topological transitions.

cond-mat.mtrl-sci↗

arXiv2024

Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors

Sub-1-nm gate length $MoS_2$ transistors have been experimentally fabricated, but their device performance limit remains elusive. Herein, we explore the performance limits of the sub-1-nm gate length monolayer (ML) $MoS_2$ transistors through ab initio quantum transport simulations. Our simulation results demonstrate that, through appropriate doping and dielectric engineering, the sub-1-nm devices can meet the requirement of extended 'ITRS'(International Technology Roadmap for Semiconductors) $L_g$=0.34 nm. Following device optimization, we achieve impressive maximum on-state current densities of 409 $\mu A / \mu m$ for n-type and 800 $\mu A / \mu m$ for p-type high-performance (HP) devices, while n-type and p-type low-power (LP) devices exhibit maximum on-state current densities of 75 $\mu A / \mu m$ and 187 $\mu A / \mu m$, respectively. We employed the Wentzel-Kramer-Brillouin (WKB) approximation to explain the physical mechanisms of underlap and spacer region optimization on transistor performance. The underlap and spacer regions primarily influence the transport properties of sub-1-nm transistors by respectively altering the width and body factor of the potential barriers. Compared to ML $MoS_2$ transistors with a 1 nm gate length, our sub-1-nm gate length HP and LP ML $MoS_2$ transistors exhibit lower energy-delay products. Hence the sub-1-nm gate length transistors have immense potential for driving the next generation of electronics.

physics.comp-ph↗

arXiv2023

Gate-controlled neuromorphic functional transition in an electrochemical graphene transistor

Neuromorphic devices have gained significant attention as potential building blocks for the next generation of computing technologies owing to their ability to emulate the functionalities of biological nervous systems. The essential components in artificial neural network such as synapses and neurons are predominantly implemented by dedicated devices with specific functionalities. In this work, we present a gate-controlled transition of neuromorphic functions between artificial neurons and synapses in monolayer graphene transistors that can be employed as memtransistors or synaptic transistors as required. By harnessing the reliability of reversible electrochemical reactions between C atoms and hydrogen ions, the electric conductivity of graphene transistors can be effectively manipulated, resulting in high on/off resistance ratio, well-defined set/reset voltage, and prolonged retention time. Overall, the on-demand switching of neuromorphic functions in a single graphene transistor provides a promising opportunity to develop adaptive neural networks for the upcoming era of artificial intelligence and machine learning.

physics.app-ph↗

arXiv2023

Dynamic motion of polar skyrmions in oxide heterostructures

Polar skyrmions have been widely investigated in oxide heterostructure recently, due to their exotic properties and intriguing physical insights. Meanwhile, so far, the external field-driven motion of the polar skyrmion, akin to the magnetic counterpart, has yet to be discovered. Here, using phase-field simulations, we demonstrate the dynamic motion of the polar skyrmions with integrated external thermal, electrical, and mechanical stimuli. The external heating reduces the spontaneous polarization hence the skyrmion motion barrier, while the skyrmions shrink under the electric field, which could weaken the lattice pinning and interactions between the skyrmions. The mechanical force transforms the skyrmions into c-domain in the vicinity of the indenter center under the electric field, providing the space and driving force needed for the skyrmions to move. This study confirmed that the skyrmions are quasi-particles that can move collectively, while also providing concrete guidance for the further design of polar skyrmion-based electronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Landauer-QFLPS model for mixed Schottky-Ohmic contact two-dimensional transistors

Two-dimensional material-based field effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, after years of development, no device model can match the Pao-Sah model for standard silicon-based transistors in terms of physical accuracy and computational efficiency to support large-scale integrated circuit design. One remaining critical obstacle is the contacts of 2DM-FETs. In order to self-consistently include the contact effect in the current model, it is necessary to perform self-consistent calculations, which is a fatal flaw for applications that prioritize efficiency. Here, we report that the Landauer-QFLPS model effectively overcomes the above contradiction, where QFLPS means quasi-Fermi-level phase space theory. By connecting the physical pictures of the contact and the intrinsic channel part, we have successfully derived a drain-source current formula including the contact effect. To verify the model, we prepared transistors based on two typical 2DMs, black phosphorus (BP) and molybdenum disulfide (MoS2), the former having ambipolar transport and the latter showing electron-dominant unipolar transport. The proposed new formula could describe both 2DM-FETs with Schottky or Ohmic contacts. Moreover, compared with traditional methods, the proposed model has the advantages of accuracy and efficiency, especially in describing non-monotonic drain conductance characteristics, because the contact effect is self-consistently and compactly packaged as an exponential term. More importantly, we also examined the model at the circuit level. Here, we fabricated a three-bit threshold inverter quantizer circuit based on ambipolar-BP process and experimentally demonstrated that the model can accurately predict the circuit performance. This industry-benign 2DM-FET model is supposed to be very useful for the development of 2DM-FET-based integrated circuits.

physics.app-ph↗

arXiv2023

An efficient model algorithm for two-dimensional field-effect transistors

Two-dimensional materials-based field-effect transistors (2DM-FETs) exhibit both ambipolar and unipolar transport types. To physically and compactly cover both cases, we put forward a quasi-Fermi-level phase space (QFLPS) approach to model the ambipolar effect in our previous work. This work aims to further improve the QFLPS model's numerical aspect so that the model can be implanted into the standard circuit simulator. We first rigorously derive the integral-free formula for the drain-source current to achieve this goal. It is more friendly to computation than the integral form. Besides, it explicitly gives the correlation terms between the electron and hole components. Secondly, to work out the boundary values required by the new expressions, we develop a fast evaluation algorithm for the surface electrostatic potential based on the zero-temperature limit property of the 2DM-FET system. By calibrating the model with the realistic device data of black phosphorus (BP) and monolayer molybdenum disulfide (ML-MoS2) FETs, the completed algorithm is tested against practical cases. The results show a typical superiority to the benchmark algorithm by two orders of magnitude in time consumption can be achieved while keeping a high accuracy with 7 to 9 significant digits.

cond-mat.mtrl-sci↗

arXiv2022

Mechanical configurable nanopatterning of polar topological states and formation of post-skyrmion

The controllable phase transition and nanopatterning of topological states in a ferroelectric system under external stimuli are critical for realizing the potential applications in nanoelectronic devices such as logic, memory, race-track, etc. Herein, using the phase-field simulations, we demonstrate the mechanical manipulation of polar skyrmions in ferroelectric superlattices by applying external local compressive stress through an atomic force microscopy (AFM) tip. Different switching pathways are observed: under small to moderate force (<1 uN), the skyrmions coalesce to form a long stripe; while increasing the applied load (e.g., above 2 uN) leads to the suppression of spontaneous polarization, forming a new metastable topological structure, namely the post-skyrmion. It is constructed by attaching multiple merons onto a center Bloch skyrmion, showing a topological charge of 1.5 (under 2 uN) or 2 (under 3 uN). We have further designed a mechanical nanopatterning process, where the stripes can form a designed pattern by moving the AFM tip (write), which can also be switched back to a full skyrmion state under an applied electric field (erase). We believe this study will spur further interest in mechanical manipulation and nanopatterning of polar topological phases through mechanical forces.

cond-mat.mtrl-sci↗

arXiv2022

Superconductivity in epitaxially grown LaVO3/KTaO3(111) heterostructures

Complex oxide heterointerfaces can host a rich of emergent phenomena, and epitaxial growth is usually at the heart of forming these interfaces. Recently, a strong crystalline-orientation-dependent two-dimensional superconductivity was discovered at interfaces between KTaO3 single-crystal substrates and films of other oxides. Unexpectedly, rare of these oxide films was epitaxially grown. Here, we report the existence of superconductivity in epitaxially grown LaVO3/KTaO3(111) heterostructures, with a superconducting transition temperature of ~0.5 K. Meanwhile, no superconductivity was detected in the (001)- and (110)-orientated LaVO3/KTaO3 heterostructures down to 50 mK. Moreover, we find that for the LaVO3/KTaO3(111) interfaces to be conducting, an oxygen-deficient growth environment and a minimum LaVO3 thickness of ~0.8 nm (~ 2 unit cells) are needed.

cond-mat.supr-con↗

arXiv2021

Emergence of high-temperature superconductivity at the interface of two Mott insulators

Interfacial superconductivity has manifested itself in various types of heterostructures: band insulator-band insulator, band insulator-Mott insulator, and Mott insulator-metal. We report the observation of high-temperature superconductivity (HTS) in a complementary and long expected type of heterostructures, which consists of two Mott insulators, La2CuO4 (LCO) and PrBa2Cu3O7 (PBCO). By carefully controlling oxidization condition and selectively doping CuO2 planes with Fe atoms, which suppress superconductivity, we found that the superconductivity arises at the LCO side and is confined within no more than two unit cells (about 2.6 nm) near the interface. A phenomenon of overcome the Fe barrier will show up if excess oxygen is present during growth. Some possible mechanisms for the interfacial HTS have been discussed, and we attribute it to the redistribution of oxygen.

cond-mat.supr-con↗

arXiv2021

Local Manipulation of Polar Skyrmions and Topological Phase Transitions

Topological phases such as polar skyrmions have been a fertile playground for ferroelectric oxide superlattices, with exotic physical phenomena such as negative capacitance. Herein, using phase-field simulations, we demonstrate the local control of the skyrmion phase with electric potential applied through a top electrode. Under a relatively small electric potential, the skyrmions underneath the electrode can be erased and recovered reversibly. A topologically protected transition from the symmetric to asymmetric skyrmion bubbles is observed at the edge of the electrode. While a topological transition to a labyrinthine domain requires a high applied potential, it can switch back to the skyrmion state with a relatively small electric potential. The topological transition from +1 to 0 occurs before the full destruction of the bubble state. It is shown that the shrinking and bursting of the skyrmions leads to a large reduction in the dielectric permittivity, the magnitude of which depends on the size of the electrode.

cond-mat.mtrl-sci↗

arXiv2020

Observation of two-dimensional superconductivity at the LaAlO3/KTaO3(110) heterointerface

We report on the observation of a Tc ~0.9 K superconductivity at the interface between LaAlO3 film and the 5d transition-metal oxide KTaO3(110) single crystal. The interface shows a large anisotropy of the upper critical field, and its superconducting transition is consistent with a Berezinskii-Kosterlitz-Thouless transition. Both facts suggest that the superconductivity is two-dimensional (2D) in nature. The carrier density measured at 5 K is ~7 time 10^13 cm-2. The superconducting layer thickness and coherence length are estimated to be ~8 and ~30 nm, respectively. Our result provides a new platform for the study of 2D superconductivity at oxide interfaces.

cond-mat.supr-con↗

arXiv2020

Electric field control of disorder-tunable superconductivity and the emergence of quantum metal at an oxide interface

We report on an extraordinary field effect of the superconducting LaAlO3/KTaO3(111) interface with Tc ~2 K. By applying a gate voltage (VG) across KTaO3, the interface can be continuously tuned from superconducting into insulating states, yielding a dome-shaped Tc-VG dependence. The electric gating has only a minor effect on carrier density as evidenced in the Hall-effect measurement, while it changes spatial profile of the carriers in the interface, hence the carrier's disorder level significantly. As temperature is decreased, the resistance saturates at lowest temperature in both superconducting and insulating sides, despite an initial dramatic dropping or increasing, which suggests an emergence of quantum metallic state associated with failed superconductor and/or fragile insulator. A VG-modulation of the magnetic-field-driven superconductor to insulator quantum phase transition reveals a non-universal criticality.

cond-mat.supr-con↗

arXiv2020

Direct Visualization of Irreducible Ferrielectricity in Crystals

In solids, charge polarity can one-to-one correspond to spin polarity phenomenologically, e.g. ferroelectricity/ferromagnetism, antiferroelectricity/antiferromagnetism, and even dipole-vortex/magnetic-vortex, but ferrielectricity/ferrimagnetism kept telling a disparate story in microscopic level. Since the definition of a charge dipole involves more than one ion, there may be multiple choices for a dipole unit, which makes most ferrielectric orders equivalent to ferroelectric ones, i.e. this ferrielectricity is not necessary to be a real independent branch of polarity. In this work, by using the spherical aberration-corrected scanning transmission electron microscope, we visualize a nontrivial ferrielectric structural evolution in BaFe2Se3, in which the development of two polar sub-lattices is out-of-sync, for which we term it as irreducible ferrielectricity. Such irreducible ferrielectricity leads to a non-monotonic behavior for the temperature-dependent polarization, and even a compensation point in the ordered state. Our finding unambiguously distinguishes ferrielectrics from ferroelectrics in solids.

cond-mat.mtrl-sci↗

arXiv2020

Efficient light-emitting diodes based on oriented perovskite nanoplatelets

Solution-processed planar perovskite light-emitting diodes (LEDs) promise high-performance and cost-effective electroluminescent (EL) devices ideal for large-area display and lighting applications. Exploiting emission layers with high ratios of horizontal transition dipole moments (TDMs) is expected to boost photon outcoupling of planar LEDs. However, LEDs based on anisotropic perovskite nanoemitters remains to be inefficient (external quantum efficiency, EQE <5%), due to the difficulties of simultaneously controlling the orientations of TDMs, achieving high photoluminescence quantum yields (PLQYs) and realizing charge balance in the films of the assembled nanostructures. Here we demonstrate efficient EL from an in-situ grown continuous perovskite film comprising of a monolayer of face-on oriented nanoplatelets. The ratio of horizontal TDMs of the perovskite nanoplatelet films is ~84%, substantially higher than that of isotropic emitters (67%). The nanoplatelet film shows a high PLQY of ~75%. These merits enable LEDs with a peak EQE of 23.6%, representing the most efficient perovskite LEDs.

physics.app-ph↗

arXiv2018

Possible structural origin of superconductivity in Sr-doped Bi2Se3

Doping bismuth selenide (Bi2Se3) with elements such as copper and strontium (Sr) can induce superconductivity, making the doped materials interesting candidates to explore potential topological superconducting behaviors. It was thought that the superconductivity of doped Bi2Se3 was induced by dopant atoms intercalated in van der Waals gaps. However, several experiments have shown that the intercalation of dopant atoms may not necessarily make doped Bi2Se3 superconducting. Thus, the structural origin of superconductivity in doped Bi2Se3 remains an open question. Herein, we combined material synthesis and characterization, high-resolution transmission electron microscopy, and first-principles calculations to study the doping structure of Sr-doped Bi2Se3. We found that the emergence of superconductivity is strongly related with n-type dopant atoms. Atomic-level energy-dispersive X-ray mapping revealed various n-type Sr dopants that occupy intercalated and interstitial positions. First-principles calculations showed that the formation energy of a specific interstitial Sr doping position depends strongly on Sr doping level. This site changes from a metastable position at low Sr doping level to a stable position at high Sr doping level. The calculation results explain why quenching is necessary to obtain superconducting samples when the Sr doping level is low and also why slow furnace cooling can yield superconducting samples when the Sr doping level is high. Our findings suggest that Sr atoms doped at interstitial locations, instead of those intercalated in van der Waals gaps, are most likely to be responsible for the emergence of superconductivity in Sr-doped Bi2Se3.

cond-mat.supr-con↗

arXiv2017

Atomically-thin Femtojoule Filamentary Memristor

The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical towards reducing the operating current, voltage and energy consumption in filamentary type memristors. Previously, the thickness of this filament layer has been limited to above a few nanometers due to processing constraints, making it challenging to further suppress the on-state current and the switching voltage. Here, we study the formation of conductive filaments in a material medium with sub-nanometer thickness, formed through the oxidation of atomically-thin two-dimensional boron nitride. The resulting memristive device exhibits sub-nanometer filamentary switching with sub-pA operation current and femtojoule per bit energy consumption. Furthermore, by confining the filament to the atomic scale, we observe current switching characteristics that are distinct from that in thicker medium due to the profoundly different atomic kinetics. The filament morphology in such an aggressively scaled memristive device is also theoretically explored. These ultra-low energy devices are promising for realizing femtojoule and sub-femtojoule electronic computation, which can be attractive for applications in a wide range of electronics systems that desire ultra-low power operation.

physics.app-ph↗

arXiv2017

Interfacial Multiferroics of TiO2/PbTiO3 Heterostructure Driven by Ferroelectric Polarization Discontinuity

Novel phenomena appear when two different oxide materials are combined together to form an interface. For example, at the interface of LaAlO3/SrTiO3, two dimensional conductive states form to avoid the polar discontinuity and magnetic properties are found at such interface. In this work, we propose a new type of interface between two nonmagnetic and nonpolar oxides that could host a conductive state with magnetic properties, where it is the ferroelectric polarization discontinuity instead of the polar discontinuity that leads to the charge transfer, forming the interfacial conductive or magnetic states. As a concrete example, we investigate by first-principles calculations the heterostructures made of ferroelectric perovskite oxide PbTiO3 and non-ferroelectric polarized oxides TiO2. We show that charge is transferred to the interfacial layer forming an interfacial conductive state with ferromagnetic ordering that may persist up to room temperature. Especially, the strong coupling between bulk ferroelectric polarization and interface ferromagnetism represents a new type of magnetoelectric effect, which provides an ideal platform for exploring the intriguing interfacial multiferroics. The findings here are important not only for fundamental science but also for promising applications in nanoscale electronics and spintronics.

cond-mat.mtrl-sci↗