arXiv subjects

Helmut Karl

Publications and source records attributed to Helmut Karl.

11 recordsLinked to original sources

arXiv2026

Hematite Thin Films Grown on Z-Cut and Y-Cut Lithium Niobate Piezoelectric Substrates by Pulsed Laser Deposition

Altermagnets are a newly identified class of materials that combine advantageous characteristics of both ferro- and antiferromagnets, making them highly promising for spintronic applications. Hematite has recently been identified as an altermagnetic material and exhibits several noteworthy properties, including a high N\'eel temperature, a temperature dependent spin reorientation transition (SRT) at the Morin temperature ($T_\mathrm{M}$), and low magnetic damping. In this work, we demonstrate the epitaxial growth of hematite thin films on y- and z-cut lithium niobate (LiNbO$_3$) substrates using pulsed laser deposition (PLD). LiNbO$_3$ as piezoelectric substrate is of particular interest as it enables the efficient excitation of surface acoustic waves (SAWs) with interdigital transducers. The different substrate cuts allow for different orientations of the N\'eel vector. Films grown on y-cut LiNbO3 are single-crystalline and single-phase, while those deposited on z-cut LiNbO$_3$ exhibit two distinct in-plane (ip) domains rotated 60{\deg} relative to each other. On both substrates, the hematite thin films exhibit a temperature dependent SRT which allows the antiferromagnetic N\'eel vector to be controlled. This study paves the way for the development of high-quality piezoelectric/altermagnetic hyprids for magnonics and spintronics.

cond-mat.mtrl-sci↗

arXiv2022

Site-selective ion beam synthesis and optical properties of individual CdSe nanocrystal quantum dots in a SiO2 matrix

Cadmium selenide nanocrystal quantum dots (NC-QDs) are site-selectively synthesized by sequential ion beam implantation of selenium and cadmium ions in a SiO2 matrix through sub-micron apertures followed by a rapid thermal annealing step. The size, areal density and optical emission energy of the NC-QDs are controlled by the ion fluence during implantation and the diameter of implantation aperture. For low fluences and small apertures the emission of these optically active emitters is blue-shifted compared to that of the bulk material by $>100\,{\rm meV}$ due to quantum confinement. The emission exhibits spectral diffusion and blinking on a second timescales as established also for solution synthesized NC-QDs.

cond-mat.mes-hall↗

arXiv2021

Donor implanted Back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems

Three different elements, Silicon, Selenium, and Tellurium, are ion-implanted in Gallium arsenide to form a conducting layer that serves as a back-gate to a molecular beam epitaxy (MBE) overgrown two-dimensional electron gas (2DEG). While the heavy ion Tellurium creates too many damages in the gallium arsenide to form a conducting layer, both Silicon and Selenium show promising results combined with MBE-grown high-quality 2DEGs. Similar 2DEG mobility compared to non-implanted reference samples is achieved for both Silicon and Selenium implanted structures. Individual contacts to the back-gate are challenging. However, Silicon implanted structures, annealed before the MBE growth, result in a function back-gate, and the electron density of the 2DEG is tuned via the back-gate.

physics.app-ph↗

arXiv2019

VO2 Nanocrystals for Designer Phase-Change Metamaterials

Subwavelength nanoparticles can support electromagnetic resonances with distinct features depending on their size, shape and nature. For example, electric and magnetic Mie resonances occur in dielectric particles, while plasmonic resonances appear in metals. Here, we experimentally demonstrate that the multipolar resonances hosted by VO2 nanocrystals can be dynamically tuned and switched thanks to the insulator-to-metal transition of VO2. Using both Mie theory and Maxwell Garnett effective medium theory, we retrieve the complex refractive index of the effective medium composed of a slab of VO2 nanospheres embedded in SiO2 and show that such a resulting metamaterial presents distinct optical tunability compared to unpatterned VO2. We further show that this provides a new degree of freedom to design low-loss phase-change metamaterials with designer optical tunability and actively controlled light scattering.

physics.optics↗

arXiv2016

THz-circuits driven by photo-thermoelectric graphene-junctions

For future on-chip communication schemes, it is essential to integrate nanoscale materials with an ultrafast optoelectronic functionality into high-frequency circuits. The atomically thin graphene has been widely demonstrated to be suitable for photovoltaic and optoelectronic devices because of its broadband optical absorption and its high electron mobility. Moreover, the ultrafast relaxation of photogenerated charge carriers has been verified in graphene. Here, we show that dual-gated graphene junctions can be functional parts of THz-circuits. As the underlying optoelectronic process, we exploit ultrafast photo-thermoelectric currents. We describe an immediate photo-thermoelectric current of the unbiased device following a femtosecond laser excitation. For a picosecond time-scale after the optical excitation, an additional photo-thermoelectric contribution shows up, which exhibits the fingerprint of a spatially inverted temperature profile. The latter can be understood by the different time-constants and thermal coupling mechanisms of the electron and phonon baths within graphene to the substrate and the metal contacts. The interplay of the processes gives rise to ultrafast electromagnetic transients in high-frequency circuits, and it is equally important for a fundamental understanding of graphene-based ultrafast photodetectors and switches.

cond-mat.mes-hall↗

arXiv2016

Structured Back Gates for High-Mobility Two-Dimensional Electron Systems Using Oxygen Ion Implantation

We present a new approach of back gate patterning that is compatible with the requirements of highest mobility molecular beam epitaxy. Contrary to common back gating techniques, our method is simple, reliable and can be scaled up for entire wafers. The back gate structures are defined by local oxygen implantation into a silicon doped GaAs epilayer, which suppresses the conductance without affecting the surface quality.

cond-mat.mes-hall↗

arXiv2015

Ultrafast photodetection in the quantum wells of single AlGaAs/GaAs-based nanowires

We investigate the ultrafast optoelectronic properties of single Al0.3Ga0.7As/GaAs-core-shell-nanowires. The nanowires contain GaAs-based quantum wells. For a resonant excitation of the quantum wells, we find a picosecond photocurrent which is consistent with an ultrafast lateral expansion of the photogenerated charge carriers. This Dember-effect does not occur for an excitation of the GaAs-based core of the nanowires. Instead, the core exhibits an ultrafast displacement current and a photo-thermoelectric current at the metal Schottky contacts. Our results uncover the optoelectronic dynamics in semiconductor core-shell nanowires comprising quantum wells, and they demonstrate the possibility to use the low-dimensional quantum well states therein for ultrafast photoswitches and photodetectors.

cond-mat.mes-hall↗

arXiv2015

Ultrafast photocurrents and THz generation in single InAs-nanowires

To clarify the ultrafast temporal interplay of the different photocurrent mechanisms occurring in single InAs-nanowire-based circuits, an on-chip photocurrent pump-probe spectroscopy based on coplanar striplines was utilized. The data are interpreted in terms of a photo-thermoelectric current and the transport of photogenerated holes to the electrodes as the dominating ultrafast photocurrent contributions. Moreover, it is shown that THz radiation is generated in the optically excited InAs-nanowires, which is interpreted in terms of a dominating photo-Dember effect. The results are relevant for nanowire-based optoelectronic and photovoltaic applications as well as for the design of nanowire-based THz sources.

cond-mat.mes-hall↗

arXiv2015

Ultrafast helicity control of surface currents in topological insulators with near-unity fidelity

In recent years, a class of solid state materials, called three-dimensional topological insulators, has emerged. In the bulk, a topological insulator behaves like an ordinary insulator with a band gap. At the surface, conducting gapless states exist showing remarkable properties such as helical Dirac dispersion and suppression of backscattering of spin-polarized charge carriers. The characterization and control of the surface states via transport experiments is often hindered by residual bulk contributions yet at cryogenic temperatures. Here, we show that surface currents in Bi2Se3 can be controlled by circularly polarized light on a picosecond time scale with a fidelity near unity even at room temperature. We re-veal the temporal separation of such ultrafast helicity-dependent surface currents from photo-induced thermoelectric and drift currents in the bulk. Our results uncover the functionality of ultrafast optoelectronic devices based on surface currents in topological insulators.

cond-mat.mtrl-sci↗

arXiv2014

Ultrafast electronic read-out of diamond NV centers coupled to graphene

Nonradiative transfer processes are often regarded as loss channels for an optical emitter1, since they are inherently difficult to be experimentally accessed. Recently, it has been shown that emitters, such as fluorophores and nitrogen vacancy centers in diamond, can exhibit a strong nonradiative energy transfer to graphene. So far, the energy of the transferred electronic excitations has been considered to be lost within the electron bath of the graphene. Here, we demonstrate that the trans-ferred excitations can be read-out by detecting corresponding currents with picosecond time resolution. We electrically detect the spin of nitrogen vacancy centers in diamond electronically and con-trol the nonradiative transfer to graphene by electron spin resonance. Our results open the avenue for incorporating nitrogen vacancy centers as spin qubits into ultrafast electronic circuits and for harvesting non-radiative transfer processes electronically.

cond-mat.mes-hall↗

arXiv2012

Ion beam synthesis of nanothermochromic diffraction gratings with giant switching contrast at telecom wavelengths

Nanothermochromic diffraction gratings based on the metal-insulator transition of $\mathrm{VO_2}$ are fabricated by site-selective ion beam implantation in a $\mathrm{SiO_2}$ matrix. Gratings were defined either (i) directly by spatially selective ion beam synthesis or (ii) by site-selective deactivation of the phase transition by ion beam induced defects. The strongest increase of the diffracted light intensities was observed at a wavelength of 1550\,nm exceeding a factor of 20 for the selectively deactivated gratings. The observed pronounced thermal hysteresis extending down close to room temperature makes this system ideally suited for optical memory applications.

cond-mat.mtrl-sci↗