arXiv subjects

Hendrik Bentmann

Publications and source records attributed to Hendrik Bentmann.

At least 19 recordsLinked to original sources

arXiv2026

Disentangling bulk and surface states in the electronic structure of PtBi$_2$(0001)

Recent reports of surface-localized topological superconductivity in trigonal PtBi$_2$ highlight the importance of understanding its surface electronic structure. We investigate the bulk and surface band structure of PtBi$_2$ using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. Through photon-energy- and polarization-dependent measurements, we disentangle bulk dispersions from surface states on the two distinct surface terminations of PtBi$_2$(0001). For both terminations, we assign several different surface states and find good agreement between experiment and calculations. Based on our calculations, we analyze the orbital composition in the surface and bulk bands and compare the results to polarization-dependent ARPES measurements. Together, our results provide a coherent picture of the surface electronic structure of PtBi$_2$ across both surface terminations.

cond-mat.str-el↗

arXiv2026

Fermiology and spin polarization of topological surface states in PtBi$_2$

Layered PtBi$_2$ is a candidate for topological superconductivity arising in Fermi-arc surface states. Using spin- and angle-resolved photoemission spectroscopy, we demonstrate that the Fermi arcs in PtBi$_2$ are singly degenerate and spin-polarized, which establishes their nontrivial topology and constitutes a necessary condition for topological superconductivity. We further uncover a pronounced surface-termination dependence of the Fermi-arc dispersion, yielding either nearly flat or approximately linear bands in agreement with first-principles calculations. Together, the observed spin polarization and termination-dependent bandwidth of the Fermi-arc surface states identify key ingredients underlying the potential emergence of topological superconductivity in PtBi$_2$.

cond-mat.supr-con↗

arXiv2026

Electronic Structure and Resonant Circular Dichroism of La$_{0.7}$Sr$_{0.3}$MnO$_3$ from Soft X-ray Angle-Resolved Photoemission

Coupling between spin, orbital, charge, and lattice degrees of freedom in transition-metal oxides produces a variety of electronic and magnetic phenomena of importance for future technologies. Here, we explore the electronic band structure of a (111)-oriented La0.7Sr0.3MnO3 thin film through soft X-ray angle-resolved photoemission spectroscopy (ARPES). The measurements agree with the electronic band structure calculated with density functional theory using Hubbard U correction. Furthermore, we probe the circular dichroism in ARPES, and observe a pronounced momentum- resolved magnetic circular dichroism in resonant photoemission from the Mn L-edge. The approach combines the momentum- and spin-selectivity of ARPES and X-ray magnetic circular dichroism, respectively, which could provide a useful approach for the study of unconventional magnetism.

cond-mat.str-el↗

arXiv2025

Spatial Control of Charge Doping in n-Type Topological Insulators

Spatially controlling the Fermi level of topological insulators and keeping its electronic states stable are indispensable processes to put this material into practical use for semiconductor spintronics devices. So far, however, such a method has not been established yet. Here we show a novel method for doping hole into n-type topological insulators Bi$_2$X$_3$ (X= Se, Te) that overcomes the shortcomings of the previous reported methods. The key of this doping is to adsorb H$_2$O on Bi$_2$X$_3$ decorated with a small amount of carbon, and its trigger is the irradiation of photon with sufficient energy to excite core-electrons of the outermost layer atoms. This method allows controlling the doping amount by the irradiation time, and acts as photolithography. Such a tunable doping makes it possible to design the electronic states at the nanometer scale, and thus paves a promising avenue toward the realization of novel spintronics devices based on topological insulators.

cond-mat.mes-hall↗

arXiv2024

The fate of $p$-wave spin polarization in helimagnets with Rashba spin-orbit coupling

It has recently been realized that magnetic systems with coplanar magnetic order that are invariant under the combined operation of time-reversal and translation with half a unit cell feature energy bands with a symmetry-protected p-wave spin polarization. Such $p$-wave magnets are a sought-after spin analogy of unconventional triplet superconducting pairing and show promise for use in spintronics. Metallic helimagnets provide a realization of $p$-wave magnetism, but such order often occurs in systems lacking inversion symmetry so that Rashba spin-orbit interactions can be prominent. An important question is therefore how the magnitude and the existence of $p$-wave spin polarization is affected by Rashba spin-orbit interaction. Here, we prove that while the $p$-wave symmetry of the spin-polarized bands is strictly speaking removed by such spin-orbit interactions in helimagnets unless the period of the helix is fine-tuned, the actual quantitative deviation from $p$-wave symmetry is extremely weak unless the period of the helix is only a few lattice sites. Thereafter, we show that the $p$-wave magnetism becomes completely robust in pairs of antiferromagnetically coupled helices. More precisely, the $p$-wave spin-polarization of the bands then appears regardless of the periodicity and regardless of the strength of the spin-orbit interactions. This shows that antiferromagnetically coupled helimagnetic chains produce robust $p$-wave spin polarization free of fine-tuning requirements, making them attractive for potential spintronic applications.

cond-mat.mes-hall↗

arXiv2024

Chirality-Driven Orbital Angular Momentum and Circular Dichroism in CoSi

Chiral crystals and molecules were recently predicted to form an intriguing platform for unconventional orbital physics. Here, we report the observation of chirality-driven orbital textures in the bulk electronic structure of CoSi, a prototype member of the cubic B20 family of chiral crystals. Using circular dichroism in soft X-ray angle-resolved photoemission, we demonstrate the formation of a bulk orbital-angular-momentum texture and monopole-like orbital-momentum locking that depends on crystal handedness. We introduce the intrinsic chiral circular dichroism, icCD, as a differential photoemission observable and a natural probe of chiral electron states. Our findings render chiral crystals promising for spin-orbitronics applications.

cond-mat.mtrl-sci↗

arXiv2023

Barrier and finite size effects on the extension of topological surface-states into magnetic insulators

The interplay between magnetic and topological order can give rise to phenomena such as the quantum anomalous Hall effect. The extension of topological surface states into magnetic insulators (MIs) has been proposed as an alternative to using intrinsically magnetic topological insulators (TIs). Here, we theoretically study how this extension of surface states into a magnetic insulator are influenced both by the interface barrier potential separating a topological insulator and a magnetic insulator and by finite size effects in such structures. We find that the the gap in the surface states depends non-monotonically on the barrier strength. A small, but finite, barrier potential turns out to be advantageous as it permits the surface states to penetrate even further into the MI. Moreover, we find that due to finite size effects in thin samples, increasing the spin-splitting in the MI can actually decrease the gap of the surface states, in contrast to the usual expectation that the gap opens as the spin-splitting increases.

cond-mat.mes-hall↗

arXiv2023

Intermixing-driven surface and bulk ferromagnetism in the quantum anomalous Hall candidate MnBi$_6$Te$_{10}$

The recent realizations of the quantum anomalous Hall effect (QAHE) in MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ benchmark the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ family as a promising hotbed for further QAHE improvements. The family owes its potential to its ferromagnetically (FM) ordered MnBi$_2$Te$_4$ septuple layers (SL). However, the QAHE realization is complicated in MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ due to the substantial antiferromagnetic (AFM) coupling between the SL. An FM state, advantageous for the QAHE, can be stabilized by interlacing the SL with an increasing number $n$ of Bi$_2$Te$_3$ layers. However, the mechanisms driving the FM state and the number of necessary QLs are not understood, and the surface magnetism remains obscure. Here, we demonstrate robust FM properties in MnBi$_6$Te$_{10}$ ($n = 2$) with $T_C \approx 12$ K and establish their origin in the Mn/Bi intermixing phenomenon by a combined experimental and theoretical study. Our measurements reveal a magnetically intact surface with a large magnetic moment, and with FM properties similar to the bulk. Our investigation thus consolidates the MnBi$_6$Te$_{10}$ system as perspective for the QAHE at elevated temperatures.

cond-mat.mtrl-sci↗

arXiv2022

Topological band inversion in HgTe(001): surface and bulk signatures from photoemission

HgTe is a versatile topological material and has enabled the realization of a variety of topological states, including two- and three-dimensional (3D) topological insulators and topological semimetals. Nevertheless, a quantitative understanding of its electronic structure remains challenging, in particular due to coupling of the Te 5p-derived valence electrons to Hg 5d core states at shallow binding energy. We present a joint experimental and theoretical study of the electronic structure in strained HgTe(001) films in the 3D topological-insulator regime, based on angle-resolved photoelectron spectroscopy and density functional theory. The results establish detailed agreement in terms of (i) electronic band dispersions and orbital symmetries, (ii) surface and bulk contributions to the electronic structure, and (iii) the importance of Hg 5d states in the valence-band formation. Supported by theory, our experiments directly image the paradigmatic band inversion in HgTe, underlying its non-trivial band topology.

cond-mat.mtrl-sci↗

arXiv2021

Simulation of X-ray diffraction in Mn$_x$Bi$_2$Te$_{3+x}$ epitaxic films

Disordered heterostructures stand as a general description for compounds that are part of homologous series such as bismuth chalcogenides. In device engineering, van der Waals epitaxy of these compounds is very promising for applications in spintronic and quantum computing. Structural analysis methods are essential to control and improve their synthesis in the form of thin films. Recently, X-rays tools have been proposed for structural modeling of disordered heterostructures [arXiv:2107.12280]. Here, we further evaluate the use of these tools to study the compound Mn$_x$Bi$_2$Te$_{3+x}$ in the grazing incidence region of the reflectivity curves, as well as the effect of thickness fluctuation in the wide angle region.

cond-mat.mtrl-sci↗

arXiv2021

X-ray diffraction tools for structural modeling of epitaxic films of an intrinsic antiferromagnetic topological insulator

Synthesis of new materials demands structural analysis tools suited to the particularities of each system. Van der Waals (vdW) materials are fundamental in emerging technologies of spintronics and quantum information processing, in particular topological insulators and, more recently, materials that allow the phenomenological exploration of the combination of non-trivial electronic band topology and magnetism. Weak vdW forces between atomic layers give rise to composition fluctuations and structural disorder that are difficult to control even in a typical binary topological insulators such as Bi2Te3. The addition of a third element as in MnBi2Te4 makes the epitaxy of these materials even more chaotic. In this work, statistical model structures of thin films on single crystal substrates are described. It allows the simulation of X-ray diffraction in disordered heterostructures, a necessary step towards controlling the epitaxial growth of these materials. On top of this, the diffraction simulation method described here can be readily applied as a general tool in the field of design new materials based on stacking of vdW bonded layers of distint elements.

cond-mat.mtrl-sci↗

arXiv2020

Incipient antiferromagnetism in the Eu-doped topological insulator Bi$_2$Te$_3$

Rare earth ions typically exhibit larger magnetic moments than transition metal ions and thus promise the opening of a wider exchange gap in the Dirac surface states of topological insulators. Yet, in a recent photoemission study of Eu-doped Bi$_2$Te$_3$ films, the spectra remained gapless down to $T = 20\;\text{K}$. Here, we scrutinize whether the conditions for a substantial gap formation in this system are present by combining spectroscopic and bulk characterization methods with theoretical calculations. For all studied Eu doping concentrations, our atomic multiplet analysis of the $M_{4,5}$ x-ray absorption and magnetic circular dichroism spectra reveals a Eu$^{2+}$ valence and confirms a large magnetic moment, consistent with a $4f^7 \; {^8}S_{7/2}$ ground state. At temperatures below $10\;\text{K}$, bulk magnetometry indicates the onset of antiferromagnetic (AFM) ordering. This is in good agreement with density functional theory, which predicts AFM interactions between the Eu impurities. Our results support the notion that antiferromagnetism can coexist with topological surface states in rare-earth doped Bi$_2$Te$_3$ and call for spectroscopic studies in the kelvin range to look for novel quantum phenomena such as the quantum anomalous Hall effect.

cond-mat.str-el↗

arXiv2020

Orbital Fingerprint of Topological Fermi Arcs in a Weyl Semimetal

The monopnictides TaAs and TaP are well-established Weyl semimetals. Yet, a precise assignment of Fermi arcs, accomodating the predicted chiral charge of the bulk Weyl points, has been difficult in these systems, and the topological character of different surface features in the Fermi surface is not fully understood. Here, employing a joint analysis from linear dichroism in angle-resolved photoemission and first-principles calculations, we unveil the orbital texture on the full Fermi surface of TaP(001). We observe pronounced switches in the orbital texture at the projectedWeyl nodes, and show how they facilitate a topological classification of the surface band structure. Our findings establish a critical role of the orbital degrees of freedom in mediating the surface-bulk connectivity in Weyl semimetals.

cond-mat.str-el↗

arXiv2020

Ubiquitous impact of localised impurity states on the exchange coupling mechanism in magnetic topological insulators

Since the discovery of the quantum anomalous Hall effect in the magnetically doped topological insulators (MTI) Cr:(Bi,Sb)$_2$Te$_3$ and V:(Bi,Sb)$_2$Te$_3$, the search for the exchange coupling mechanisms underlying the onset of ferromagnetism has been a central issue, and a variety of different scenarios have been put forward. By combining resonant photoemission, X-ray magnetic dichroism and multiplet ligand field theory, we determine the local electronic and magnetic configurations of V and Cr impurities in (Bi,Sb)$_2$Te$_3$. While strong pd hybridisation is found for both dopant types, their 3d densities of states show pronounced differences. State-of-the-art first-principles calculations show how these impurity states mediate characteristic short-range pd exchange interactions, whose strength sensitively varies with the position of the 3d states relative to the Fermi level. Measurements on films with varying host stoichiometry support this trend. Our results establish the essential role of impurity-state mediated exchange interactions in the magnetism of MTI.

cond-mat.str-el↗

arXiv2019

Topological electronic structure and intrinsic magnetization in MnBi$_4$Te$_7$: a Bi$_2$Te$_3$-derivative with a periodic Mn sublattice

Combinations of non-trivial band topology and long-range magnetic order hold promise for realizations of novel spintronic phenomena, such as the quantum anomalous Hall effect and the topological magnetoelectric effect. Following theoretical advances material candidates are emerging. Yet, a compound with a band-inverted electronic structure and an intrinsic net magnetization remains unrealized. MnBi$_2$Te$_4$ is a candidate for the first antiferromagnetic topological insulator and the progenitor of a modular (Bi$_2$Te$_3$)$_n$(MnBi$_2$Te$_4$) series. For $n$ = 1, we confirm a non-stoichiometric composition proximate to MnBi$_4$Te$_7$ and establish an antiferromagnetic state below 13 K followed by a state with net magnetization and ferromagnetic-like hysteresis below 5 K. Angle-resolved photoemission experiments and density-functional calculations reveal a topological surface state on the MnBi$_4$Te$_7$(0001) surface, analogous to the non-magnetic parent compound Bi$_2$Te$_3$. Our results render MnBi$_4$Te$_7$ as a band-inverted material with an intrinsic net magnetization and a complex magnetic phase diagram providing a versatile platform for the realization of different topological phases.

cond-mat.mtrl-sci↗

arXiv2019

Orbital-driven Rashba effect in a binary honeycomb monolayer AgTe

The Rashba effect is fundamental to the physics of two-dimensional electron systems and underlies a variety of spintronic phenomena. It has been proposed that the formation of Rashba-type spin splittings originates microscopically from the existence of orbital angular momentum (OAM) in the Bloch wave functions. Here, we present detailed experimental evidence for this OAM-based origin of the Rashba effect by angle-resolved photoemission (ARPES) and two-photon photoemission (2PPE) experiments for a monolayer AgTe on Ag(111). Using quantitative low-energy electron diffraction (LEED) analysis we determine the structural parameters and the stacking of the honeycomb overlayer with picometer precision. Based on an orbital-symmetry analysis in ARPES and supported by first-principles calculations, we unequivocally relate the presence and absence of Rashba-type spin splittings in different bands of AgTe to the existence of OAM.

cond-mat.mtrl-sci↗

arXiv2018

Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi$_{2}$Te$_{4}$

Crystal growth of MnBi$_{2}$Te$_{4}$ has delivered the first experimental corroboration of the 3D antiferromagnetic topological insulator state. Our present results confirm that the synthesis of MnBi$_{2}$Te$_{4}$ can be scaled-up and strengthen it as a promising experimental platform for studies of a crossover between magnetic ordering and non-trivial topology. High-quality single crystals of MnBi$_{2}$Te$_{4}$ are grown by slow cooling within a narrow range between the melting points of Bi$_{2}$Te$_{3}$ (586 °C) and MnBi$_{2}$Te$_{4}$ (600 °C). Single crystal X-ray diffraction and electron microscopy reveal ubiquitous antisite defects in both cation sites and, possibly, Mn vacancies. Powders of MnBi$_{2}$Te$_{4}$ can be obtained at subsolidus temperatures, and a complementary thermochemical study establishes a limited high-temperature range of phase stability. Nevertheless, quenched powders are stable at room temperature and exhibit long-range antiferromagnetic ordering below 24 K. The expected Mn(II) out-of-plane magnetic state is confirmed by the magnetization, X-ray photoemission, X-ray absorption and linear dichroism data. MnBi$_{2}$Te$_{4}$ exhibits a metallic type of resistivity in the range 4.5-300 K. The compound is an n-type conductor that reaches a thermoelectric figure of merit up to ZT = 0.17. Angle-resolved photoemission experiments provide evidence for a surface state forming a gapped Dirac cone.

cond-mat.mtrl-sci↗

arXiv2018

Prediction and observation of the first antiferromagnetic topological insulator

Magnetic topological insulators (MTIs) are narrow gap semiconductor materials that combine non-trivial band topology and magnetic order. Unlike their nonmagnetic counterparts, MTIs may have some of the surfaces gapped due to breaking the time-reversal symmetry, which enables a number of exotic phenomena having potential applications in spintronics. So far, MTIs have only been created by means of doping nonmagnetic TIs with 3d transition metal elements, however, such an approach leads to strongly inhomogeneous magnetic and electronic properties of these materials, restricting the observation of important effects to very low temperatures. Finding intrinsic MTI, i.e. a stoichiometric well-ordered magnetic compound, could be an ideal solution to these problems, but no such material was observed to date. Here, using density functional theory we predict and further confirm by means of structural, transport, magnetic, angle- and spin-resolved photoemission spectroscopy measurements the realization of the antiferromagnetic (AFM) TI phase, that is hosted by the van der Waals layered compound MnBi$_2$Te$_4$. An interlayer AFM ordering makes MnBi$_2$Te$_4$ invariant with respect to the combination of the time-reversal ($\Theta$) and primitive-lattice translation ($T_{1/2}$) symmetries, $S = \Theta T_{1/2}$, giving rise to the $Z_2$ topological classification of AFM insulators. We find $Z_2 = 1$ for MnBi$_2$Te$_4$, which confirms its topologically nontrivial nature. The $S$-breaking (0001) surface of MnBi$_2$Te$_4$ exhibits a giant bandgap in the topological surface state as evidenced by ab initio calculations and photoemission measurements. These results culminate almost a decade-long search of an AFMTI, predicted in 2010. Furthermore, MnBi$_2$Te$_4$ is the first intrinsic magnetic TI realized experimentally.

cond-mat.mtrl-sci↗