SearcharxivSearch

arXiv subjects

Hendrik Wulfmeier

Publications and source records attributed to Hendrik Wulfmeier.

2 recordsLinked to original sources

Demonstration of domain wall current in MgO-doped lithium niobate single crystals up to 400 °C

Conductive ferroelectric domain walls (DWs) represent a promising topical system for the development of nanoelectronic components and device sensors to be operational at elevated temperatures. DWs show very different properties as compared to their hosting bulk crystal, in particular with respect to the high local electrical conductivity. The objective of this work is to demonstrate DW conductivity up to temperatures as high as \SI{400}{\degreeCelsius} which extends previous studies significantly. Experimental investigation of the DW conductivity of charged, inclined DWs is performed using \SI{5}{\mole\percent} MgO-doped lithium niobate single crystals. \CR{Current-voltage (\IV) curves are determined by DC electrometer measurements and impedance spectroscopy and found to be identical. Moreover, impedance spectroscopy enables to recognize artifacts such as damaged electrodes. Temperature dependent measurements} over repeated heating cycles reveal two distinct thermal activation energies for a given DW, with the higher of the activation energies only measured at higher temperatures. Depending on the specific sample, the higher activation energy is found above \SI{160}{\degreeCelsius}~to~\SI{230}{\degreeCelsius}. This suggests, in turn, that more than one type of defect/polaron is involved, and that the dominant transport mechanism changes with increasing temperature. First principles atomistic modelling suggests that the conductivity of inclined domain walls cannot be solely explained by the formation of a 2D carrier gas and must be supported by hopping processes. This holds true even at temperatures as high as \SI{400}{\degreeCelsius}. Our investigations underline the potential to extend \DWC based nanoelectronic and sensor applications even into the so-far unexplored temperature range up to \SI{400}{\degreeCelsius}.

physics.app-ph

Electronic structure of fully epitaxial Co2TiSn thin films

In this article we report on the properties of thin films of the full Heusler compound Co2TiSn prepared by DC magnetron co-sputtering. Fully epitaxial, stoichiometric films were obtained by deposition on MgO (001) substrates at substrate temperatures above 600°C. The films are well ordered in the L21 structure, and the Curie temperature exceeds slightly the bulk value. They show a significant, isotropic magnetoresistance and the resistivity becomes strongly anomalous in the paramagnetic state. The films are weakly ferrimagnetic, with nearly 1 μ_B on the Co atoms, and a small antiparallel Ti moment, in agreement with theoretical expectations. From comparison of x-ray absorption spectra on the Co L3/L2 edges, including circular and linear magnetic dichroism, with ab initio calculations of the x-ray absorption and circular dichroism spectra we infer that the electronic structure of Co2TiSn has essentially non-localized character. Spectral features that have not been explained in detail before, are explained here in terms of the final state band structure.

cond-mat.mtrl-sci