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Heng Gao

Publications and source records attributed to Heng Gao.

22 records · Page 2Linked to original sources

Spatially dispersive circular photogalvanic effect in a Weyl semimetal

Weyl semimetals are gapless topological states of matter with broken inversion and/or time reversal symmetry, which can support unconventional responses to externally applied electrical, optical and magnetic fields. Here we report a new photogalvanic effect in type-II WSMs, MoTe2 and Mo0.9W0.1Te2, which are observed to support a circulating photocurrent when illuminated by circularly polarized light at normal incidence. This effect occurs exclusively in the inversion broken phase, where crucially we find that it is associated with a spatially varying beam profile via a new dispersive contribution to the circular photogalvanic effect (s-CPGE). The response functions derived for s-CPGE reveal the microscopic mechanism of this photocurrent, which are controlled by terms that are allowed in the absence of inversion symmetry, along with asymmetric carrier excitation and relaxation. By evaluating this response for a minimal model of a Weyl semimetal, we obtain the frequency dependent scaling behavior of this form of photocurrent. These results demonstrate opportunities for controlling photoresponse by patterning optical fields to store, manipulate and transmit information over a wide spectral range.

cond-mat.mtrl-sci↗

Ferroelectric control of the giant Rashba spin orbit coupling in GeTe(111)/InP(111) superlattice

GeTe wins the renewed research interest due to its giant bulk Rashba spin orbit coupling (SOC), and becomes the father of a new multifunctional material, i.e., ferroelectric Rashba semiconductor. In the present work, we investigate Rashba SOC at the interface of the ferroelectric semiconductor superlattice GeTe(111)/InP(111) by using the first principles calculation. Contribution of the interface electric field and the ferroelectric field to Rashba SOC is revealed. A large modulation to Rashba SOC and a reversal of the spin polarization is obtained by switching the ferroelectric polarization. Our investigation about GeTe(111)/InP(111) superlattice is of great importance in the application of ferroelectric Rashba semiconductor in the spin field effect transistor.

cond-mat.mtrl-sci↗

Probing the Electronic States in Black Phosphorus Vertical Heterostructures

Atomically thin black phosphorus (BP) is a promising two-dimensional material for fabricating electronic and optoelectronic nano-devices with high mobility and tunable bandgap structures. However, the charge-carrier mobility in few-layer phosphorene (monolayer BP) is mainly limited by the presence of impurity and disorders. In this study, we demonstrate that vertical BP heterostructure devices offer great advantages in probing the electron states of monolayer and few-layer phosphorene at temperatures down to 2 K through capacitance spectroscopy. Electronic states in the conduction and valence bands of phosphorene are accessible over a wide range of temperature and frequency. Exponential band tails have been determined to be related to disorders. Unusual phenomena such as the large temperature-dependence of the electron state population in few-layer phosphorene have been observed and systematically studied. By combining the first-principles calculation, we identified that the thermal excitation of charge trap states and oxidation-induced defect states were the main reasons for this large temperature dependence of the electron state population and degradation of the on-off ratio in phosphorene field-effect transistors.

cond-mat.mtrl-sci↗

The Powerful Model Adpredictor for Search Engine Switching Detection Challenge

The purpose of the Switching Detection Challenge in the 2013 WSCD workshop was to predict users' search engine swithcing actions given records about search sessions and logs.Our solution adopted the powerful prediction model Adpredictor and utilized the method of feature engineering. We successfully applied the click through rate (CTR) prediction model Adpredicitor into our solution framework, and then the discovery of effective features and the multiple classification of different switching type make our model outperforms many competitors. We achieved an AUC score of 0.84255 on the private leaderboard and ranked the 5th among all the competitors in the competition.

cs.IR↗