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Heng Wu

Publications and source records attributed to Heng Wu.

46 records · Page 3Linked to original sources

Realization of the field-free Josephson Diode

The superconducting analog to the semiconducting diode, the Josephson diode, has long been sought, with multiple avenues to realization proposed by theorists. Exhibiting magnetic-field free, single directional superconductivity with Josephson coupling of the supercurrent across a tunnel barrier, it would serve as the building-block for next-generation superconducting circuit technology. Here we realized the field-free Josephson diode using an inversion symmetry breaking heterostructure of $\mathrm{NbSe_2/Nb_3Br_8/NbSe_2}$. We demonstrate, for the first time without magnetic field, the junction can be superconducting in one direction while normal in the opposite direction. Based on that, half-wave rectification of a square-wave excitation was achieved with low switching current density ($~2.2\times 10^2 \mathrm{A/cm^2}$), high rectification ratio ($~10^4$) and high robustness (at least $10^4$ cycles). We also demonstrate symmetric $ΔI_\mathrm{c}$ (the difference between positive and negative critical currents) behavior with field and the expected Fraunhofer current phase relation of a Josephson junction. This realization raises fundamental questions about the Josephson effect through an insulator when breaking symmetry, and opens the door to ultralow power, high speed, superconducting circuits for logic and signal modulation.

cond-mat.supr-con↗

A Rigid Registration Method in TEVAR

Since the mapping relationship between definitized intra-interventional X-ray and undefined pre-interventional Computed Tomography(CT) is uncertain, auxiliary positioning devices or body markers, such as medical implants, are commonly used to determine this relationship. However, such approaches can not be widely used in clinical due to the complex realities. To determine the mapping relationship, and achieve a initializtion post estimation of human body without auxiliary equipment or markers, proposed method applies image segmentation and deep feature matching to directly match the X-ray and CT images. As a result, the well-trained network can directly predict the spatial correspondence between arbitrary X-ray and CT. The experimental results show that when combining our approach with the conventional approach, the achieved accuracy and speed can meet the basic clinical intervention needs, and it provides a new direction for intra-interventional registration.

eess.IV↗

Stability and Sensitivity Analysis of Multi-Vendor, Multi-Terminal HVDC Systems

The stability of multi-vendor, multi-terminal HVDC systems can be analyzed in frequency domain by black-box impedance models using the generalized Nyquist stability criterion. Based on the impedance stability analysis, a multi-level sensitivity analysis approach using frequency-domain sensitivity functions is proposed to identify the root cause of potential instability. Case studies on a four-terminal HVDC system are carried out for stability and sensitivity analysis based on the impedance measurement in PSCAD. The analysis results are finally validated by electromagnetic transient simulations.

eess.SY↗

Design-Oriented Transient Stability Analysis of PLL-Synchronized Voltage-Source Converters

Differing from synchronous generators, there are lack of physical laws governing the synchronization dynamics of voltage-source converters (VSCs). The widely used phase-locked loop (PLL) plays a critical role in maintaining the synchronism of current-controlled VSCs, whose dynamics are highly affected by the power exchange between VSCs and the grid. This paper presents a design-oriented analysis on the transient stability of PLL-synchronized VSCs, i.e., the synchronization stability of VSCs under large disturbances, by employing the phase portrait approach. Insights into the stabilizing effects of the first- and second-order PLLs are provided with the quantitative analysis. It is revealed that simply increasing the damping ratio of the second-order PLL may fail to stabilize VSCs during severe grid faults, while the first-order PLL can always guarantee the transient stability of VSCs when equilibrium operation points exist. An adaptive PLL that switches between the second-order and the first-order PLL during the fault-occurring/-clearing transient is proposed for preserving both the transient stability and the phase tracking accuracy. Time-domain simulations and experimental tests, considering both the grid fault and the fault recovery, are performed, and the obtained results validate the theoretical findings.

eess.SY↗

Direct evidence for charge compensation induced large magnetoresistance in thin WTe2

Since the discovery of extremely large non-saturating magnetoresistance (MR) in WTe2, much effort has been devoted to understanding the underlying mechanism, which is still under debate. Here, we explicitly identify the dominant physical origin of the large non-saturating MR through in-situ tuning of the magneto-transport properties in thin WTe2 film. With an electrostatic doping approach, we observed a non-monotonic gate dependence of the MR. The MR reaches a maximum (10600%) in thin WTe2 film at certain gate voltage where electron and hole concentrations are balanced, indicating that the charge compensation is the dominant mechanism of the observed large MR. Besides, we show that the temperature dependent magnetoresistance exhibits similar tendency with the carrier mobility when the charge compensation is retained, revealing that distinct scattering mechanisms may be at play for the temperature dependence of magneto-transport properties. Our work would be helpful for understanding mechanism of the large MR in other nonmagnetic materials and offers an avenue for achieving large MR in the non-magnetic materials with electron-hole pockets.

cond-mat.mes-hall↗

Design-Oriented Transient Stability Analysis of Grid-Connected Converters with Power Synchronization Control

The power synchronization control (PSC) has been increasingly used with voltage-source converters (VSCs) connected to the weak ac grid. This paper presents an in-depth analysis on the transient stability of the PSC-VSC by means of the phase portrait. It is revealed that the PSC-VSC will maintain synchronization with the grid as long as there are equilibrium points after the transient disturbance. In contrast, during grid faults without any equilibrium points, the critical clearing angle (CCA) for the PSC-VSC is identified, which is found equal to the power angle at the unstable equilibrium point of the post-fault operation. This fixed CCA facilitates the design of power system protection. Moreover, it is also found that the PSC-VSC can still re-synchronize with the grid after around one cycle of oscillation, even if the fault-clearing angle is beyond the CCA. This feature reduces the risk of system collapse caused by the delayed fault clearance. These findings are corroborated by simulations and experimental tests.

eess.SY↗

Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular doping technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2. After doping, the Rc of WS2 and MoS2 have been decreased to 0.7 kohm*um and 0.5 kohm*um, respectively. The significant reduction of the Rc is attributed to the achieved high electron doping density thus significant reduction of Schottky barrier width. As a proof-ofconcept, high-performance few-layer WS2 field-effect transistors (FETs) are demonstrated, exhibiting a high drain current of 380 uA/um, an on/off ratio of 4*106, and a peak field-effect mobility of 60 cm2/V*s. This doping technique provides a highly viable route to diminish the Rc in TMDs, paving the way for high-performance 2D nano-electronic devices.

cond-mat.mtrl-sci↗

High-Performance MoS2 Field-Effect Transistors Enabled by Chloride Doping: Record Low Contact Resistance (0.5 kohm*um) and Record High Drain Current (460 uA/um)

In this paper, we report a novel chemical doping technique to reduce the contact resistance (Rc) of transition metal dichalcogenides (TMDs) - eliminating two major roadblocks (namely, doping and high Rc) towards demonstration of high-performance TMDs field-effect transistors (FETs). By using 1,2 dichloroethane (DCE) as the doping reagent, we demonstrate an active n-type doping density > 2*1019 cm-3 in a few-layer MoS2 film. This enabled us to reduce the Rc value to a record low number of 0.5 kohm*um, which is ~10x lower than the control sample without doping. The corresponding specific contact resistivity (pc) is found to decrease by two orders of magnitude. With such low Rc, we demonstrate 100 nm channel length (Lch) MoS2 FET with a drain current (Ids) of 460 uA/um at Vds = 1.6 V, which is twice the best value reported so far on MoS2 FETs.

cond-mat.mtrl-sci↗

Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs

High performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20nm have been fabricated by integrating a higher-k LaAlO3-based gate stack with an equivalent oxide thickness of 1.2nm. It is found that inserting an ultrathin (0.5nm) Al2O3 interfacial layer between higher-k and InGaAs can significantly improve the interface quality and reduce device variation. As a result, a record low subthreshold swing of 63mV/dec has been demonstrated at sub-80nm Lch for the first time, making InGaAs GAA nanowire devices a strong candidate for future low-power transistors.

cond-mat.mes-hall↗

Size-dependent Transport Study of In0.53Ga0.47As Gate-all-around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion

InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher on-current, transconductance and effective mobility due to stronger quantum confinement and the volume inversion effect. TCAD quantum mechanical simulation has been carried out to study the inversion charge distribution inside the nanowires. Volume inversion effect appears at a larger dimension for InGaAs nanowire MOSFET than its Si counterpart.

cond-mat.mes-hall↗