arXiv subjects

Hengming Li

Publications and source records attributed to Hengming Li.

5 recordsLinked to original sources

arXiv2022

Noise-induced stabilization of dynamical states with broken time-reversal symmetry

Under a high frequency drive, Josephson junctions demonstrate "Shapiro steps" of quantized voltage. These are dynamically stabilized states, in which the phase across the junction locks to the external drive. We explore the stochastic switching between two symmetric steps at $\frac{\hbar\omega}{2e}$ and $-\frac{\hbar\omega}{2e}$. Surprisingly, the switching rate exhibits a pronounced non-monotonicity as a function of temperature, violating the general expectation that transitions should become faster with temperature. We explain this behavior by realizing that the system retains memory of the dynamic state from which it is switching, thereby breaking the conventional simplifying assumptions about separations of time scales.

cond-mat.mes-hall↗

arXiv2019

Interference of chiral Andreev edge states

The search for topological excitations such as Majorana fermions has spurred interest in the boundaries between distinct quantum states. Here, we explore an interface between two prototypical phases of electrons with conceptually different ground states: the integer quantum Hall insulator and the s-wave superconductor. We find clear signatures of hybridized electron and hole states similar to chiral Majorana fermions, to which we refer as chiral Andreev edge states (CAES). They propagate along the interface in the direction determined by magnetic field and their interference can turn an incoming electron into an outgoing electron or a hole, depending on the phase accumulated by the CAES along their path. Our results demonstrate that these excitations can propagate and interfere over a significant length, opening future possibilities for their coherent manipulation.

cond-mat.mes-hall↗

arXiv2019

Full control of quantum Hall supercurrent in a side gated graphene Josephson junction

We present a study of a graphene-based Josephson junction with dedicated side gates carved from the same sheet of graphene as the junction itself. These side gates are highly efficient, and allow us to modulate carrier density along either edge of the junction in a wide range. In particular, in magnetic fields in the $1-2$ Tesla range, we are able to populate the next Landau level, resulting in Hall plateaus with conductance that differs from the bulk filling factor. When counter-propagating quantum Hall edge states are introduced along either edge, we observe supercurrent localized along that edge of the junction. Here we study these supercurrents as a function of magnetic field and carrier density.

cond-mat.mes-hall↗

arXiv2018

Supercurrent Flow in Multi-Terminal Graphene Josephson Junctions

We investigate the electronic properties of ballistic planar Josephson junctions with multiple superconducting terminals. Our devices consist of monolayer graphene encapsulated in boron nitride with molybdenum-rhenium contacts. Resistance measurements yield multiple resonant features, which are attributed to supercurrent flow among adjacent and non-adjacent Josephson junctions. In particular, we find that superconducting and dissipative currents coexist within the same region of graphene. We show that the presence of dissipative currents primarily results in electron heating and estimate the associated temperature rise. We find that the electrons in encapsulated graphene are efficiently cooled through the electron-phonon coupling.

cond-mat.mes-hall↗

arXiv2018

Supercurrent in Graphene Josephson Junctions with Narrow Trenches in the Quantum Hall Regime

Coupling superconductors to quantum Hall edge states is the subject of intense investigation as part of the ongoing search for non-abelian excitations. Our group has previously observed supercurrents of hundreds of picoamperes in graphene Josephson junctions in the quantum Hall regime. One of the explanations of this phenomenon involves the coupling of an electron edge state on one side of the junction to a hole edge state on the opposite side. In our previous samples, these states are separated by several microns. Here, a narrow trench perpendicular to the contacts creates counterpropagating quantum Hall edge channels tens of nanometres from each other. Transport measurements demonstrate a change in the low-field Fraunhofer interference pattern for trench devices and show a supercurrent in both trench and reference junctions in the quantum Hall regime. The trench junctions show no enhancement of quantum Hall supercurrent and an unexpected supercurrent periodicity with applied field, suggesting the need for further optimization of device parameters.

cond-mat.mes-hall↗