Searcharxiv⌕ Search

arXiv subjects

Henk W. Ch. Postma

Publications and source records attributed to Henk W. Ch. Postma.

5 recordsLinked to original sources

Electrochemical impedance spectroscopy of graphene nanogaps

Graphene nanogaps represent an emerging platform for nanoscale electrochemical and sensing devices, with potential applications in next-generation biomolecular sequencing. However, their interfacial behavior in aqueous environments remains poorly characterized, particularly with respect to frequency-dependent impedance and charge transport mechanisms at the graphene edge. We fabricate graphene nanogaps by controlled electrical breakdown in an inert atmosphere and study their electrochemical response. Upon exposure to ambient conditions, a surface contamination layer supports electrochemical activity within an adsorbed ultrathin conductive film between the graphene edges. Electrochemical impedance spectroscopy reveals distinct frequency-dependent responses consistent with a Warburg element associated with diffusion in this confined interfacial film. The impedance evolves systematically with liquid $\mathrm{p}H$, reflecting changes in electrochemical reaction-diffusion processes at the graphene edges. A quantitative equivalent-circuit model captures these effects and enables extraction of an effective nanogap length scale from impedance spectra, providing information complementary to that obtained from tunneling measurements.

cond-mat.mes-hall↗

On the Role of Water Vapor and Process Gasses in Low-Temperature Gold-Catalyzed Graphene Etching

The ability to pattern graphene at low temperatures in a scalable manner is one of the greatest challenges facing graphene industrial adoption today. We demonstrate a simple method for low-temperature gold-catalyzed etching of graphite with predictable characteristics using ambient air at $350-375^\circ$ C. The naturally occurring water vapor in ambient air is necessary for this reaction to occur. In addition, we characterize the etch characteristics as a function of process parameters. Ar annealing is required to obtain crystallographically straight etches, and $375^\circ$ C is required to obtain single-layer deep etching. We anticipate that this work can be adapted by future research to precisely control the shape of the etched areas, allowing for the simple low-temperature creation of nanoscale graphite features, and ultimately can be applied to single-layer graphene sheets for integrated device fabrication.

physics.app-ph↗

DNA-Graphene Interactions During Translocation Through Nanogaps

We study how double-stranded DNA translocates through graphene nanogaps. Nanogaps are fabricated with a novel capillary-force induced graphene nanogap formation technique. DNA translocation signatures for nanogaps are qualitatively different from those obtained with circular nanopores, owing to the distinct shape of the gaps discussed here. Translocation time and conductance values vary by $\sim 100$%, which we suggest are caused by local gap width variations. We also observe exponentially relaxing current traces. We suggest that slow relaxation of the graphene membrane following DNA translocation may be responsible. We conclude that DNA-graphene interactions are important, and need to be considered for graphene-nanogap based devices. This work further opens up new avenues for direct read of single molecule activitities, and possibly sequencing.

cond-mat.mes-hall↗

Electrical transport through carbon nanotube junctions created by mechanical manipulation

Using an atomic force microscope we have created nanotube junctions such as buckles and crossings within individual single-wall metallic carbon nanotubes connected to metallic electrodes. The electronic transport properties of these manipulated structures show that they form electronic tunnel junctions. The conductance shows power-law behavior as a function of bias voltage and temperature, which can be well modeled by a Luttinger liquid model for tunneling between two nanotube segments separated by the manipulated junction.

cond-mat.mes-hall↗