arXiv subjects

Henri Saarikoski

Publications and source records attributed to Henri Saarikoski.

10 recordsLinked to original sources

arXiv2018

Gate-controlled anisotropy in Aharonov-Casher spin interference: signatures of Dresselhaus spin-orbit inversion and spin phases

The coexistence of Rashba and Dresselhaus spin-orbit interactions (SOIs) in semiconductor quantum wells leads to an anisotropic effective field coupled to carriers' spins. We demonstrate a gate-controlled anisotropy in Aharonov-Casher (AC) spin interferometry experiments with InGaAs mesoscopic rings by using an in-plane magnetic field as a probe. Supported by a perturbation-theory approach, we find that the Rashba SOI strength controls the AC resistance anisotropy via spin dynamic and geometric phases and establish ways to manipulate them by employing electric and magnetic tunings. Moreover, assisted by two-dimensional numerical simulations, we identify a remarkable anisotropy inversion in our experiments attributed to a sign change in the renormalized linear Dresselhaus SOI controlled by electrical means, which would open a door to new possibilities for spin manipulation.

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arXiv2018

Spin interferometry in anisotropic spin-orbit fields

Electron spins in a two-dimensional electron gas (2DEG) can be manipulated by spin-orbit (SO) fields originating from either Rashba or Dresselhaus interactions with independent isotropic characteristics. Together, though, they produce anisotropic SO fields with consequences on quantum transport through spin interference. Here we study the transport properties of modelled mesoscopic rings subject to Rashba and Dresselhaus [001] SO couplings in the presence of an additional in-plane Zeeman field acting as a probe. By means of 1D and 2D quantum transport simulations we show that this setting presents anisotropies in the quantum resistance as a function of the Zeeman field direction. Moreover, the anisotropic resistance can be tuned by the Rashba strength up to the point to invert its response to the Zeeman field. We also find that a topological transition in the field texture that is associated with a geometric phase switching is imprinted in the anisotropy pattern. We conclude that resistance anisotropy measurements can reveal signatures of SO textures and geometric phases in spin carriers.

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arXiv2017

Very low critical current density for motion of coupled domain walls in synthetic ferrimagnet nanowires

Domain walls in ferromagnetic nanowires are potential building-blocks of future technologies such as racetrack memories, in which data encoded in the domain walls are transported using spin-polarised currents. However, the development of energy-efficient devices has been hampered by the high current densities needed to initiate domain wall motion. We show here that a remarkable reduction in the critical current density can be achieved for in-plane magnetised coupled domain walls in CoFe/Ru/CoFe synthetic ferrimagnet tracks. The antiferromagnetic exchange coupling between the layers leads to simple Néel wall structures, imaged using photoemission electron and Lorentz transmission electron microscopy, with a width of only $\sim 100$~nm. The measured critical current density to set these walls in motion, detected using magnetotransport measurements, is $1.0 \times 10^{11}$~Am$^{-2}$, almost an order of magnitude lower than in a ferromagnetically coupled control sample. Theoretical modelling indicates that this is due to nonadiabatic driving of anisotropically coupled walls, a mechanism that can be used to design efficient domain-wall devices.

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arXiv2016

Efficient stopping of current-driven domain wall using a local Rashba field

We theoretically show that a locally-embedded Rashba interaction acts as a strong pinning center for current-driven domain walls and demonstrate efficient capturing and depinning of the wall using a weak Rashba interaction of the order of 0.01 eVÅ. Our discovery is expected to be useful for the highly reliable control of domain walls in racetrack memories.

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arXiv2016

Effective geometric phases and topological transitions in SO(3) and SU(2) rotations

We address the development of geometric phases in classical and quantum magnetic moments (spin-1/2) precessing in an external magnetic field. We show that nonadiabatic dynamics lead to a topological phase transition determined by a change in the driving field topology. The transition is associated with an effective geometric phase which is identified from the paths of the magnetic moments in a spherical geometry. The topological transition presents close similarities between SO(3) and SU(2) cases but features differences in, e.g., the adiabatic limits of the geometric phases, being $2π$ and $π$ in the classical and the quantum case, respectively. We discuss possible experiments where the effective geometric phase would be observable.

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arXiv2015

Topological transitions in spin interferometers

We show that topological transitions in electronic spin transport are feasible by a controlled manipulation of spin-guiding fields. The transitions are determined by the topology of the fields texture through an effective Berry phase (related to the winding parity of spin modes around poles in the Bloch sphere), irrespective of the actual complexity of the nonadiabatic spin dynamics. This manifests as a distinct dislocation of the interference pattern in the quantum conductance of mesoscopic loops. The phenomenon is robust against disorder, and can be experimentally exploited to determine the magnitude of inner spin-orbit fields.

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arXiv2014

Current-driven dynamics of coupled domain walls in a synthetic antiferromagnet

We develop the theory of magnetic domain wall motion in coupled double-layer systems where electrons can hop between the layers giving rise to an antiferromagnetic coupling. We demonstrate that the force from the interlayer coupling drives the walls and the effect of the extrinsic pinning is greatly reduced if the domain walls are initially separated. The threshold current density for metastable spin-aligned configurations is also much lower. We conclude that the interlayer coupling has a significant effect on domain wall mobility in double-layer systems.

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arXiv2012

Spin transmission control in helical magnetic fields

We calculate spin transport in two-dimensional waveguides in the presence of spatially modulated Zeeman-split energy bands. We show that in a regime where the spin evolution is predominantly adiabatic the spin backscattering rate can be tuned via diabatic Landau-Zener transitions between the spin-split bands [C. Betthausen et. al., Science 337, 324 (2012)]. This mechanism is tolerant against spin-independent scattering processes. Completely spin-polarized systems show full spin backscattering, and thus current switching. In partially spin-polarized systems a spatial sequence of Landau-Zener transition points enhances the resistance modulation via reoccupation of backscattered spin-polarized transport modes. We discuss a possible application as a spin transistor.

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arXiv2009

Spin accumulation with spin-orbit interaction

Spin accumulation is a crucial but imprecise concept in spintronics. In metal-based spintronics it is characterized in terms of semiclassical distribution functions. In semiconductors with a strong spin-orbit coupling the spin accumulation is interpreted as a superposition of coherent eigenstates. Both views can be reconciled by taking into account the electron-electron interaction: a sufficiently strong self-consistent exchange field reduces a spin accumulation to a chemical potential difference between the two spin bands even in the presence of spin-orbit coupling. We demonstrate the idea on a clean two-dimensional electron gas (2DEG) by showing how the exchange field protects a spin accumulation from dephasing and introduces an easy-plane anisotropy.

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arXiv2005

Ground-state of two-dimensional finite electron systems in the Quantum Hall regime

We study electronic structures of quasi-two-dimensional finite electron systems in high magnetic fields. The solutions in the fractional quantum Hall regime are interpreted as quantum liquids of electrons and off-electron vortices. The ground states are classified according to the number of vortices inside the electron droplet. The theory predicts observable effects due to vortex formation in the chemical potentials and magnetization of electron droplets. We compare the transitions in the theory to those found in electron transport experiments on a quantum dot device and find significant correspondence.

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