arXiv subjects

Henry F. Legg

Publications and source records attributed to Henry F. Legg.

36 records · Page 2Linked to original sources

arXiv2023

Josephson transistor from the superconducting diode effect in domain wall and skyrmion magnetic racetracks

In superconductors, the combination of broken time-reversal and broken inversion symmetries can result in a critical current being dependent on the direction of current flow. This phenomenon is known as superconducting diode effect (SDE) and has great potential for applications in future low-temperature electronics. Here, we investigate how magnetic textures such as domain walls or skyrmions on a racetrack can be used to control the SDE in a Josephson junction and how the SDE can be used as a low-temperature read-out of the data in racetrack memory devices. First, we consider a two-dimensional electron gas (2DEG) with strong spin-orbit-interaction (SOI) coupled to a magnetic racetrack, which forms the weak-link in a Josephson junction. In this setup, the exchange coupling between the magnetic texture and the itinerant electrons in the 2DEG breaks time-reversal symmetry and enables the SDE. When a magnetic texture, such as a domain wall or skyrmion enters the Josephson junction, the local exchange field within the junction is changed and, consequently, the strength of the SDE is altered. In particular, depending on the position and form of the magnetic texture, moving the magnetic texture can cause the SDE coefficient to change its sign, enabling a Josephson transistor effect with potentially fast switching frequencies. Further, we find that the SDE is enhanced if the junction length-scales are comparable with the length-scale of the magnetic texture. Furthermore, we show that, under certain circumstances, the symmetry breaking provided by particular magnetic textures, such as skyrmions, can lead to an SDE even in the absence of Rashba SOI in the 2DEG. Our results provide a basis for new forms of readout in low-temperature memory devices as well as demonstrating how a Josephson transistor effect can be achieved even in the absence of an external magnetic field and intrinsic Rashba SOI.

cond-mat.supr-con↗

arXiv2023

Induced superconducting correlations in the quantum anomalous Hall insulator

Inducing Cooper pairing in a thin ferromagnetic topological insulator in the quantum anomalous Hall state (called quantum anomalous Hall insulator, QAHI) is a promising way to realize topological superconductivity with associated chiral Majorana edge states. However, finding evidence of superconducting proximity effect in a QAHI has proven to be a considerable challenge due to inherent experimental difficulties. Here we report the observation of crossed Andreev reflection (CAR) across a narrow superconducting Nb electrode contacting the chiral edge state of a QAHI, evinced by a negative nonlocal voltage measured downstream from the grounded Nb electrode. This is an unambiguous signature of induced superconducting pair correlation in the chiral edge state. Our theoretical analysis demonstrates that CAR processes of the chiral edge are not strongly dependent on the nature of the superconductivity that mediates them. Nevertheless, the characteristic length of the CAR process is found to be much longer than the superconducting correlation length in Nb, which suggests that the CAR is in fact mediated by superconductivity induced on the QAHI surface. The approach and results presented here provide a foundation for future studies of topological superconductivity and Majorana physics, as well as for the search for non-Abelian zero modes.

cond-mat.mes-hall↗

arXiv2023

Reply to "Comment on 'Trivial Andreev Band Mimicking Topological Bulk Gap Reopening in the Nonlocal Conductance of Long Rashba Nanowires'"

In this Reply we respond to the comment by Das Sarma and Pan [1] on Hess et al., Phys. Rev. Lett. 130, 207001, "Trivial Andreev Band Mimicking Topological Bulk Gap Reopening in the Nonlocal Conductance of Long Rashba Nanowires" [2]. First, we note that Das Sarma and Pan reproduce the key results of Hess et al., substantiating that our findings are entirely valid. Next, we clarify the incorrect statement by Das Sarma and Pan that the main result of Hess et al. requires a "contrived periodic pristine system", pointing out the extensive discussion of positional disorder in the Hess et al. We also demonstrate that nonlocal conductance features are generically reduced by disorder. This applies to both an Andreev band and to a genuine topological bulk gap reopening signature (BRS). In fact, the suppression of nonlocal conductance of a genuine BRS by disorder was discussed in, e.g., Pan, Sau, Das Sarma, PRB 103, 014513 (2021) [3]. We conclude that, contrary to the claims of Das Sarma and Pan, the minimal model of Hess et al. is relevant to current realistic nanowire devices where only a few overlapping ABSs would be required to mimic a BRS.

cond-mat.mes-hall↗

arXiv2023

Topological insulator spin transistor

When a charge current is injected into the surface state of a topological insulator (TI), the resulting shift of the spin-momentum-locked Fermi surface leads to the appearance of a net spin polarization. The helical spin structure of the Dirac-cone surface state of a TI should lead to a fixed sign of this spin polarization for a given current direction, but experimentally, both signs that agree and disagree with the theory expectation for the surface state Dirac cone have been observed in the past. Although the origin of the wrong sign has not been conclusively elucidated, this observation points to the possibility that one may switch the spin polarization at will to realize a spin transistor operation. Here we report the observation of both signs of spin polarization in the very same device and demonstrate the tunability between the two by electrostatic gating, which gives a proof of principle of a topological insulator spin transistor. This switching behaviour is explained using a minimal model of competing contributions from the topological surface state and trivial Rashba-split states.

cond-mat.mes-hall↗

arXiv2023

Top-down fabrication of bulk-insulating topological insulator nanowires for quantum devices

In a nanowire (NW) of a three-dimensional topological insulator (TI), the quantum-confinement of topological surface states leads to a peculiar subband structure that is useful for generating Majorana bound states. Top-down fabrication of TINWs from a high-quality thin film would be a scalable technology with great design flexibility, but there has been no report on top-down-fabricated TINWs where the chemical potential can be tuned to the charge neutrality point (CNP). Here we present a top-down fabrication process for bulk-insulating TINWs etched from high-quality (Bi$_{1-x}$Sb$_{x}$)$_2$Te$_3$ thin films without degradation. We show that the chemical potential can be gate-tuned to the CNP and the resistance of the NW presents characteristic oscillations as functions of the gate voltage and the parallel magnetic field, manifesting the TI-subband physics. We further demonstrate the superconducting proximity effect in these TINWs, preparing the groundwork for future devices to investigate Majorana bound states.

cond-mat.mes-hall↗

arXiv2023

Parity protected superconducting diode effect in topological Josephson junctions

In bulk superconductors or Josephson junctions formed in materials with spin-orbit interaction, the critical current can depend on the direction of current flow and applied magnetic field, an effect known as the superconducting (SC) diode effect. Here, we consider the SC diode effect in Josephson junctions in nanowire devices. We find that the $4π$-periodic contribution of Majorana bound states (MBSs) to the current phase relation (CPR) of single junctions results in a significant enhancement of the SC diode effect when the device enters the topological phase. Crucially, this enhancement of the SC diode effect is independent of the parity of the junction and therefore protected from parity altering events, such as quasiparticle poisoning, which have hampered efforts to directly observe the $4π$-periodic CPR of MBSs. We show that this effect can be generalized to SQUIDs and that, in such devices, the parity-protected SC diode effect can provide a highly controllable probe of the topology in a Josephson junction.

cond-mat.mes-hall↗

arXiv2022

Trivial Andreev band mimicking topological bulk gap reopening in the non-local conductance of long Rashba nanowires

We consider a one-dimensional Rashba nanowire in which multiple Andreev bound states in the bulk of the nanowire form an Andreev band. We show that, under certain circumstances, this trivial Andreev band can produce an apparent closing and reopening signature of the bulk band gap in the non-local conductance of the nanowire. Furthermore, we show that the existence of the trivial bulk reopening signature (BRS) in non-local conductance is essentially unaffected by the additional presence of trivial zero-bias peaks (ZBPs) in the local conductance at either end of the nanowire. The simultaneous occurrence of a trivial BRS and ZBPs mimics the basic features required to pass the so-called "topological gap protocol". Our results therefore provide a topologically trivial minimal model by which the applicability of this protocol can be benchmarked.

cond-mat.mes-hall↗

arXiv2022

Determination of spin-orbit interaction in semiconductor nanostructures via non-linear transport

We investigate non-linear transport signatures stemming from linear and cubic spin-orbit interactions in one- and two-dimensional systems. The analytical zero-temperature response to external fields is complemented by finite temperature numerical analysis, establishing a way to distinguish between linear and cubic spin-orbit interactions. We also propose a protocol to determine the relevant material parameters from transport measurements attainable in realistic conditions, illustrated by values for Ge heterostructures. Our results establish a method for the fast benchmarking of spin-orbit properties in semiconductor nanostructures.

cond-mat.mes-hall↗

arXiv2022

Superconducting diode effect due to magnetochiral anisotropy in topological insulator and Rashba nanowires

The critical current of a superconductor can depend on the direction of current flow due to magnetochiral anisotropy when both inversion and time-reversal symmetry are broken, an effect known as the superconducting (SC) diode effect. Here, we consider one-dimensional (1D) systems in which superconductivity is induced via the proximity effect. In both topological insulator and Rashba nanowires, the SC diode effect due to a magnetic field applied along the spin-polarization axis and perpendicular to the nanowire provides a measure of inversion symmetry breaking in the presence of a superconductor. Furthermore, a strong dependence of the SC diode effect on an additional component of magnetic field applied parallel to the nanowire as well as on the position of the chemical potential can be used to detect that a device is in the region of parameter space where the phase transition to topological superconductivity is expected to arise.

cond-mat.mes-hall↗

arXiv2022

Giant magnetochiral anisotropy from quantum confined surface states of topological insulator nanowires

Wireless technology relies on the conversion of alternating electromagnetic fields to direct currents, a process known as rectification. While rectifiers are normally based on semiconductor diodes, quantum mechanical non-reciprocal transport effects that enable highly controllable rectification have recently been discovered. One such effect is magnetochiral anisotropy (MCA), where the resistance of a material or a device depends on both the direction of current flow and an applied magnetic field. However, the size of rectification possible due to MCA is usually extremely small, because MCA relies on inversion symmetry breaking leading to the manifestation of spin-orbit coupling, which is a relativistic effect. In typical materials the rectification coefficient $γ$ due to MCA is usually $|γ| \lesssim 1$ ${\rm A^{-1} T^{-1}}$ and the maximum values reported so far are $|γ| \sim 100$ ${\rm A^{-1} T^{-1}}$ in carbon nanotubes and ZrTe$_5$. Here, to overcome this limitation, we artificially break inversion symmetry via an applied gate voltage in thin topological insulator (TI) nanowire heterostructures and theoretically predict that such a symmetry breaking can lead to a giant MCA effect. Our prediction is confirmed via experiments on thin bulk-insulating (Bi$_{1-x}$Sb$_{x}$)$_2$Te$_3$ TI nanowires, in which we observe an MCA consistent with theory and $|γ| \sim 100000$ ${\rm A^{-1} T^{-1}}$, the largest ever reported MCA rectification coefficient in a normal conductor.

cond-mat.mes-hall↗

arXiv2022

Gigantic magnetochiral anisotropy in the topological semimetal ZrTe5

Topological materials with broken inversion symmetry can give rise to nonreciprocal responses, such as the current rectification controlled by magnetic fields via magnetochiral anisotropy. Bulk nonreciprocal responses usually stem from relativistic corrections and are always very small. Here we report our discovery that ZrTe5 crystals in proximity to a topological quantum phase transition present gigantic magnetochiral anisotropy, which is the largest ever observed to date. We argue that a very low carrier density, inhomogeneities, and a torus-shaped Fermi surface induced by breaking of inversion symmetry in a Dirac material are central to explain this extraordinary property.

cond-mat.mes-hall↗

arXiv2022

Prevalence of trivial zero-energy sub-gap states in non-uniform helical spin chains on the surface of superconductors

Helical spin chains, consisting of magnetic (ad-)atoms, on the surface of bulk superconductors are predicted to host Majorana bound states (MBSs) at the ends of the chain. Here, we investigate the prevalence of trivial zero-energy bound states in these helical spin chain systems. First, we show that the Hamiltonian of a helical spin chain on a superconductor can be mapped to an effective Hamiltonian reminiscent of a semiconductor nanowire with strong Rashba spin-orbit coupling. In particular, we show that a varying rotation rate between neighbouring magnetic moments maps to smooth non-uniform potentials in the effective nanowire Hamiltonian. Previously it has been found that trivial zero-energy states are abundant in nanowire systems with smooth potentials. Therefore, we perform an extensive search for zero-energy bound states in helical spin chain systems with varying rotation rates. Although bound states with near zero-energy do exist for certain dimensionalities and rotation profiles, we find that zero-energy bound states are far less prevalent than in semiconductor nanowire systems with equivalent non-uniformities. In particular, utilising varying rotation rates, we do not find zero-energy bound states in the most experimentally relevant setup consisting of a one-dimensional helical spin chain on the surface of a three-dimensional superconductor, even for profiles that produce near zero-energy states in equivalent one- and two- dimensional systems. Although our findings do not rule them out, the much reduced prevalence of zero-energy bound states in long non-uniform helical spin chains compared with equivalent semi-conductor nanowires, as well as the ability to measure states locally via STM, should reduce the experimental barrier to identifying MBSs in such systems.

cond-mat.mes-hall↗

arXiv2022

Metallization and proximity superconductivity in topological insulator nanowires

A heterostructure consisting of a topological insulator (TI) nanowire brought into proximity with a superconducting layer provides a promising route to achieve topological superconductivity and associated Majorana bound states (MBSs). Here, we study effects caused by such a coupling between a thin layer of an $s$-wave superconductor and a TI nanowire. We show that there is a distinct phenomenology arising from the metallization of states in the TI nanowire by the superconductor. In the strong coupling limit, required to induce a large superconducting pairing potential, we find that metallization results in a shift of the TI nanowire subbands ($\sim 20$ meV) as well as it leads to a small reduction in the size of the subband gap opened by a magnetic field applied parallel to the nanowire axis. Surprisingly, we find that metallization effects in TI nanowires can also be beneficial. Most notably, coupling to the superconductor induces a potential in the portion of the TI nanowire close to the interface with the superconductor, this breaks inversion symmetry and at finite momentum lifts the spin degeneracy of states within a subband. As such coupling to a superconductor can create or enhance the subband splitting that is key to achieving topological superconductivity. This is in stark contrast to semiconductors, where it has been shown that metallization effects always reduce the equivalent subband-splitting caused by spin-orbit coupling. We also find that in certain geometries metallization effects can reduce the critical magnetic required to enter the topological phase. We conclude that, unlike in semiconductors, the metallization effects that occur in TI nanowires can be relatively easily mitigated, for instance by modifying the geometry of the attached superconductor or by compensation of the TI material.

cond-mat.mes-hall↗

arXiv2021

Local and non-local quantum transport due to Andreev bound states in finite Rashba nanowires with superconducting and normal sections

We analyze Andreev bound states (ABSs) that form in normal sections of a Rashba nanowire that is only partially covered by a superconducting layer. These ABSs are localized close to the ends of the superconducting section and can be pinned to zero energy over a wide range of magnetic field strengths even if the nanowire is in the non-topological regime. For finite-size nanowires (typically $\lesssim 1$ $μ$m in current experiments), the ABS localization length is comparable to the length of the nanowire. The probability density of an ABS is therefore non-zero throughout the nanowire and differential-conductance calculations reveal a correlated zero-bias peak (ZBP) at both ends of the nanowire. When a second normal section hosts an additional ABS at the opposite end of the superconducting section, the combination of the two ABSs can mimic the closing and reopening of the bulk gap in local and non-local conductances accompanied by the appearance of the ZBP. These signatures are reminiscent of those expected for Majorana bound states (MBSs) but occur here in the non-topological regime. Our results demonstrate that conductance measurements of correlated ZBPs at the ends of a typical superconducting nanowire or an apparent closing and reopening of the bulk gap in the local and non-local conductance are not conclusive indicators for the presence of MBSs.

cond-mat.mes-hall↗

arXiv2021

Majorana bound states in topological insulators without a vortex

We consider a three-dimensional topological insulator (TI) wire with a non-uniform chemical potential induced by gating across the cross-section. This inhomogeneity in chemical potential lifts the degeneracy between two one-dimensional surface state subbands. A magnetic field applied along the wire, due to orbital effects, breaks time-reversal symmetry and lifts the Kramers degeneracy at zero-momentum. If placed in proximity to an $s$-wave superconductor, the system can be brought into a topological phase at relatively weak magnetic fields. Majorana bound states (MBSs), localized at the ends of the TI wire, emerge and are present for an exceptionally large region of parameter space in realistic systems. Unlike in previous proposals, these MBSs occur without the requirement of a vortex in the superconducting pairing potential, which represents a significant simplification for experiments. Our results open a pathway to the realisation of MBSs in present day TI wire devices.

cond-mat.mes-hall↗

arXiv2020

Partial flux ordering and thermal Majorana metals in (higher-order) spin liquids

In frustrated quantum magnetism, chiral spin liquids are a particularly intriguing subset of quantum spin liquids in which the fractionalized parton degrees of freedom form a Chern insulator. Here we study an exactly solvable spin-3/2 model which harbors not only chiral spin liquids but also spin liquids with higher-order parton band topology -- a trivial band insulator, a Chern insulator with gapless chiral edge modes, and a second-order topological insulator with gapless corner modes. With a focus on the thermodynamic precursors and thermal phase transitions associated with these distinct states, we employ numerically exact quantum Monte Carlo simulations to reveal a number of unconventional phenomena. This includes a heightened thermal stability of the ground state phases, the emergence of a partial flux ordering of the associated $\mathbb{Z}_2$ lattice gauge field, and the formation of a thermal Majorana metal regime extending over a broad temperature range.

cond-mat.str-el↗

arXiv2019

Quantum confinement of the Dirac surface states in topological-insulator nanowires

The non-trivial topology of the three-dimensional (3D) topological insulator (TI) dictates the appearance of gapless Dirac surface states. Intriguingly, when a 3D TI is made into a nanowire, a gap opens at the Dirac point due to the quantum confinement, leading to a peculiar Dirac sub-band structure. This gap is useful for, e.g., future Majorana qubits based on TIs. Furthermore, these Dirac sub-bands can be manipulated by a magnetic flux and are an ideal platform for generating stable Majorana zero modes (MZMs), which play a key role in topological quantum computing. However, direct evidence for the Dirac sub-bands in TI nanowires has not been reported so far. Here we show that by growing very thin ($\sim$40-nm diameter) nanowires of the bulk-insulating topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ and by tuning its chemical potential across the Dirac point with gating, one can unambiguously identify the Dirac sub-band structure. Specifically, the resistance measured on gate-tunable four-terminal devices was found to present non-equidistant peaks as a function of the gate voltage, which we theoretically show to be the unique signature of the quantum-confined Dirac surface states. These TI nanowires open the way to address the topological mesoscopic physics, and eventually the Majorana physics when proximitised by an $s$-wave superconductor.

cond-mat.mes-hall↗

arXiv2017

Planar Hall effect from the surface of topological insulators

A prominent feature of topological insulators (TIs) is the surface states comprising of spin-nondegenerate massless Dirac fermions. Recent technical advances have made it possible to address the surface transport properties of TI thin films while tuning the Fermi levels of both top and bottom surfaces across the Dirac point by electrostatic gating. This opened the window for studying the spin-nondegenerate Dirac physics peculiar to TIs. Here we report our discovery of a novel planar Hall effect (PHE) from the TI surface, which results from a hitherto-unknown resistivity anisotropy induced by an in-plane magnetic field. This effect is observed in dual-gated devices of bulk-insulating Bi$_{2-x}$Sb$_{x}$Te$_{3}$ thin films, in which both top and bottom surfaces are gated. The origin of PHE is the peculiar time-reversal-breaking effect of an in-plane magnetic field, which anisotropically lifts the protection of surface Dirac fermions from back-scattering. The key signature of the field-induced anisotropy is a strong dependence on the gate voltage with a characteristic two-peak structure near the Dirac point which is explained theoretically using a self-consistent T-matrix approximation. The observed PHE provides a new tool to analyze and manipulate the topological protection of the TI surface in future experiments.

cond-mat.mes-hall↗