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Henry Rodriguez

Publications and source records attributed to Henry Rodriguez.

6 recordsLinked to original sources

Towards Atom-by-Atom Fabrication: Mechanosynthetic donation and abstraction

Enabled by inverted-mode scanning tunneling microscopy (IM-STM) and the use of functionalized molecular tools, we demonstrate positionally-controlled mechanosynthetic addition (donation) of carbon and subtraction (abstraction) of silicon atoms on a model build site: atomically clean and crystalline Si(100). The resulting structures represent the first demonstrations of an emerging ability to manipulate radical chemistry with positional control of specific atoms and moieties in 3D. Furthermore, by comparing the behavior of molecular tools designed for atomic donation versus abstraction, we highlight general principles governing molecular tool design for selective and reliable mechanosynthetic functionality.

cond-mat.mtrl-sci

Atomically precise mechanosynthesis of carbon structures on hydrogenated Si(100) by inverted-mode STM

The ability to build atomically precise structures on surfaces with complete control over both atomic placement and chemical bonding remains a central challenge in nanoscale fabrication. Here, we demonstrate simultaneous spatial and chemical control over the mechanosynthetic fabrication of carbon structures. Using inverted-mode STM, C$_2$ units are donated from surface-deposited molecules to pre-patterned reactive sites on a hydrogen-passivated Si(100) surface. We demonstrate single-site C$_2$ donation, spatially patterned multi-site C$_2$ donation, and the stepwise assembly of polyyne structures through successive C-C bond formation. Together, these results establish controlled mechanosynthetic donation as a foundational capability for programmable atomically precise fabrication.

cond-mat.mtrl-sci

Inverted-Mode Scanning Tunneling Microscopy for Atomically Precise Fabrication

Scanning Tunneling Microscopy (STM) enables fabrication of atomically precise structures with unique properties and growing technological potential. However, reproducible manipulation of covalently bonded atoms requires control over the atomic configuration of both sample and probe - a longstanding challenge in STM. Here, we introduce inverted-mode STM, an approach that enables mechanically controlled chemical reactions for atomically precise fabrication. Tailored molecules on a Si(100) surface image the probe apex, and the usual challenge of understanding the probe structure is effectively solved. The molecules can also react with the probe, with the two sides of the tunnel junction acting as reagents positioned with sub-angstrom precision. This allows abstraction or donation of atoms from or to the probe apex. We demonstrate this by using a novel alkynyl-terminated molecule to reproducibly abstract hydrogen atoms from the probe. The approach is expected to extend to other elements and moieties, opening a new avenue for scalable atomically precise fabrication.

cond-mat.mes-hall

Molecular Tools for Non-Planar Surface Chemistry

Scanning probe microscopy (SPM) investigations of on-surface chemistry on passivated silicon have only shown in-plane chemical reactions, and studies on bare silicon are limited in facilitating additional reactions post-molecular-attachment. Here, we enable subsequent reactions on Si(100) through selectively adsorbing 3D, silicon-specific "molecular tools". Following an activation step, the molecules present an out-of-plane radical that can function both to donate or accept molecular fragments, thereby enabling applications across multiple scales, e.g., macroscale customizable silicon-carbon coatings or nanoscale tip-mediated mechanosynthesis. Creation of many such molecular tools is enabled by broad molecular design criteria that facilitate reproducibility, surface specificity, and experimental verifiability. These criteria are demonstrated using a model molecular tool tetrakis(iodomethyl)germane ($Ge(CH_{2}I)_{4}$; TIMe-Ge), with experimental validation by SPM and X-ray photoelectron spectroscopy (XPS), and theoretical support by density functional theory (DFT) investigations. With this framework, a broad and diverse range of new molecular engineering capabilities are enabled on silicon.

cond-mat.mtrl-sci

Topological Band Engineering of Graphene Nanoribbons

Topological insulators (TIs) are an emerging class of materials that host highly robust in-gap surface/interface states while maintaining an insulating bulk. While most notable scientific advancements in this field have been focused on TIs and related topological crystalline insulators in 2D and 3D, more recent theoretical work has predicted the existence of 1D symmetry-protected topological phases in graphene nanoribbons (GNRs). The topological phase of these laterally-confined, semiconducting strips of graphene is determined by their width, edge shape, and the terminating unit cell, and is characterized by a Z2 invariant (similar to 1D solitonic systems). Interfaces between topologically distinct GNRs characterized by different Z2 are predicted to support half-filled in-gap localized electronic states which can, in principle, be utilized as a tool for material engineering. Here we present the rational design and experimental realization of a topologically-engineered GNR superlattice that hosts a 1D array of such states, thus generating otherwise inaccessible electronic structure. This strategy also enables new end states to be engineered directly into the termini of the 1D GNR superlattice. Atomically-precise topological GNR superlattices were synthesized from molecular precursors on a Au(111) surface under ultra-high vacuum (UHV) conditions and characterized by low temperature scanning tunneling microscopy (STM) and spectroscopy (STS). Our experimental results and first-principles calculations reveal that the frontier band structure of these GNR superlattices is defined purely by the coupling between adjacent topological interface states. This novel manifestation of 1D topological phases presents an entirely new route to band engineering in 1D materials based on precise control of their electronic topology, and is a promising platform for future studies of 1D quantum spin physics.

cond-mat.mes-hall

Hierarchical On-Surface Synthesis of Deterministic Graphene Nanoribbon Heterojunctions

Bottom-up graphene nanoribbon (GNR) heterojunctions are nanoscale strips of graphene whose electronic structure abruptly changes across a covalently bonded interface. Their rational design offers opportunities for profound technological advancements enabled by their extraordinary structural and electronic properties. Thus far the most critical aspect of their synthesis, the control over sequence and position of heterojunctions along the length of a ribbon, has been plagued by randomness in monomer sequences emerging from step-growth copolymerization of distinct monomers. All bottom-up GNR heterojunction structures created so far have exhibited random sequences of heterojunctions and, while useful for fundamental scientific studies, are difficult to incorporate into functional nanodevices as a result. Here we describe a new hierarchical fabrication strategy that allows deterministic growth of bottom-up GNRs that preferentially exhibit a single heterojunction interface rather than a random statistical sequence of junctions along the ribbon. Such heterojunctions provide a viable new platform that could be directly used in functional GNR-based device applications at the molecular scale. Our hierarchical GNR fabrication strategy is based on differences in the dissociation energies of C-Br and C-I bonds that allow control over the growth sequence of the block-copolymers from which GNRs are formed, and consequently yields a significantly higher proportion of single-junction GNR heterostructures. Scanning tunnelling spectroscopy and density functional theory calculations confirm that hierarchically-grown heterojunctions between chevron GNR (cGNR) and binaphthyl-cGNR segments exhibit straddling Type I band alignment in structures that are only one atomic layer thick and 3 nm in width.

cond-mat.mtrl-sci