arXiv subjects

Henry T. Aller

Publications and source records attributed to Henry T. Aller.

3 recordsLinked to original sources

arXiv2026

Phonon selection and interference in momentum-resolved electron energy loss spectroscopy

As momentum-resolved Electron Energy Loss Spectroscopy (q-EELS) becomes more widely used for phonon measurements, better understanding of the intricacies of the acquired signal is necessary. Selection rules limit the allowed scattering, which may prohibit the appearance of specific phonon branches in some measurements. Simultaneous sampling of the lattice across all basis atoms also warrants a coherent treatment of phonons, which yields a reciprocal-space repeating unit cell that is larger than the standard Brillouin zone. We thus introduce the concept of the ``interferometric Brillouin zone'' where phonons are observed, which is closely related to the Dynamic Structure Factor. These effects follow from our new mathematical formalism for waves and vibrations, and we demonstrate calculations of q-EELS experiments using molecular dynamics and lattice dynamics. Results are compared to established q-EELS simulation methods in well-studied material systems, including the utilization of scattering selection rules to acquire a polarization-selective vibrational density of states. Finally, we note the analysis involved is directly applicable to any wave phenomena, such as plasmons or polaritons.

cond-mat.mtrl-sci↗

arXiv2024

Low Thermal Resistance of Diamond-AlGaN Interfaces Achieved Using Carbide Interlayers

This study investigates thermal transport across nanocrystalline diamond/AlGaN interfaces, crucial for enhancing thermal management in AlGaN/AlGaN-based devices. Chemical vapor deposition growth of diamond directly on AlGaN resulted in a disordered interface with a high thermal boundary resistance (TBR) of 20.6 m^2-K/GW. We employed sputtered carbide interlayers (e.g., $B_4C$, $SiC$, $B_4C/SiC$) to reduce thermal boundary resistance in diamond/AlGaN interfaces. The carbide interlayers resulted in record-low thermal boundary resistance values of 3.4 and 3.7 m^2-K/GW for Al$_{0.65}$Ga$_{0.35}$N samples with $B_4C$ and $SiC$ interlayers, respectively. STEM imaging of the interface reveals interlayer thicknesses between 1.7-2.5 nm, with an amorphous structure. Additionally, Fast-Fourier Transform (FFT) characterization of sections of the STEM images displayed sharp crystalline fringes in the AlGaN layer, confirming it was properly protected from damage from hydrogen plasma during the diamond growth. In order to accurately measure the thermal boundary resistance we develop a hybrid technique, combining time-domain thermoreflectance and steady-state thermoreflectance fitting, offering superior sensitivity to buried thermal resistances. Our findings underscore the efficacy of interlayer engineering in enhancing thermal transport and demonstrate the importance of innovative measurement techniques in accurately characterizing complex thermal interfaces. This study provides a foundation for future research in improving thermal properties of semiconductor devices through interface engineering and advanced measurement methodologies.

cond-mat.mtrl-sci↗

arXiv2023

Quantifying Atomic Structural Disorder Using Procrustes Shape Analysis

In this study, we added vacancies adjacent to a Si/Ge interface to create a disordered structure. The structure was then relaxed using various strategies. We applied Procrustes shape analysis for disorder quantification and identifying different local atomic environments.

physics.atom-ph↗