SearcharxivSearch

arXiv subjects

Heonsu Jeon

Publications and source records attributed to Heonsu Jeon.

4 recordsLinked to original sources

Lattice-mismatch Moire laser with strong flatband coupling

Inter-cell and/or interlayer coupling in Moire superlattices can generate flatbands and collective eigenmodes that enable emergent physical phenomena, motivating extensive exploration of Moire-inspired photonic devices. However, the experimental validation of robust inter-cell interactions in Moire photonic structures and the modulation of flatbands for specific photonic applications remain challenging. Here, we propose a lattice-mismatch Moire cavity and demonstrate nanolasers enabled by strong flatband coupling. In contrast to a twist-angle Moire cavity, a lattice-mismatch Moire cavity provides a stable flatband frequency and a substantial enhancement in Q factor compared to an isolated single-cell cavity, as the unit-cell size decreases. The photonic band-structure measurement of the small-unit-cell Moire cavity by photoluminescence reveals pronounced flatbands. Cell-resolved spectroscopy further confirms the presence of flatbands by identifying resonant peaks that consistently emerge across unit cells in a Moire cavity with a lattice mismatch of 102 nm, but not in a larger-unit-cell Moire cavity with a mismatch of 60 nm. Furthermore, mode selection is achieved by reducing the center-hole size, thus isolating the hexapole mode from the degenerate dipole modes while maintaining strong inter-cell coupling. Consequently, we demonstrate a low-threshold hexapole flatband laser in a single mode. Therefore, the systematic modification of the relative lattice parameters of the two constituent lattices offers a promising strategy for developing Moire nanolasers and flatband nanophotonic devices.

physics.optics

Lasing from complete set of topological states in two dimensional photonic crystal structure

Recently, topologically engineered photonic structures have garnered significant attention as their eigenstates may offer a new insight on photon manipulation and an unconventional route for nanophotonic devices with unprecedented functionalities and robustness. Herein, we present lasing actions at all hierarchical eigenstates that can exist in a topologically designed single two-dimensional (2D) photonic crystal (PhC) platform: 2D bulk, one-dimensional edge, and zero-dimensional corner states. In particular, multiple topological eigenstates are generated in a hierarchical manner with no bulk multipole moment. The unit cell of the topological PhC structure is a tetramer composed of four identical air holes perforated into an InGaAsP multiple-quantum-well epilayer slab. A square area of a topologically nontrivial PhC structure is surrounded by a topologically trivial counterpart, resulting in multidimensional eigenstates of one bulk, four side edges, and four corners within and at the boundaries. Spatially resolved optical excitation spontaneously results in lasing actions at all nine hierarchical topological states. Our experimental findings may provide insight into the development of sophisticated next-generation nanophotonic devices and robust integration platforms.

physics.app-ph

Absorption enhancement in amorphous silicon photonic crystals for thin film photovoltaic solar cells

We report on very high enhancement of thin layer's absorption through band-engineering of a photonic crystal structure. We realized amorphous silicon (aSi) photonic crystals, where slow light modes improve absorption efficiency. We show through simulation that an increase of the absorption by a factor of 1.5 is expected for a film of aSi. The proposal is then validated by an experimental demonstration, showing an important increase of the absorption of a layer of aSi over a spectral range of 0.32-0.76 microns.

cond-mat.mtrl-sci

Near-field photoluminescence study of InAs/AlGaAs quantum-dot-based nanoclusters: band filling effect

We have performed near-field spectroscopy and microscopy of the InAs/AlGaAs quantum-dot-based nanoclusters. It is observed that the photoluminescence spectra of spatially confined excitons in the nanoclusters is blue-shifted up to 20 meV as the power density is increased. In particular, the near-field photoluminescence images have shown that excitons became spatially confined gradually from lower energy state (1.4150 eV) to higher energy state (1.4392 eV) as the excitation power is increased, which is indicative of the band-filling effect of semiconductor nanostructures.

physics.optics