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Herbert Zirath

Publications and source records attributed to Herbert Zirath.

3 recordsLinked to original sources

An Efficient W-/D-Band Power Amplifier in a 130 nm SiGe BiCMOS Process

This paper presents a wideband power amplifier (PA) designed and implemented in Infineon Technologies' 130-nm SiGe BiCMOS process for upper W-band and lower D-band applications. A complete load-pull simulation methodology is carried out, and a band pass filter (BPF)-based matching strategy is employed for the design of the output and inter-stage matching networks. The fabricated PA prototype achieves a small-signal gain 3-dB bandwidth of 71-133 GHz. Moreover, it maintains a relatively flat gain of approximately 15.7 dB over 75-128 GHz, with less than 1-dB fluctuation. The measured saturated output power is 8.8-11.7 dBm, while the measured peak power-added efficiency (PAE) is 7.2-11.1%. These results demonstrate the potential of SiGe BiCMOS technology for wideband and integrated transmitter front ends operating across the W-/D-band frequency range.

eess.SP

Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions

Graphene field-effect transistors exhibit negligible transconductance under two scenarios: for any gate-to-source voltage when the drain-to-source voltage is set to zero, and for an arbitrary drain-to-source voltage provided that the gate-to-source voltage equals the Dirac voltage. Hence, extracting the channel and the parasitic series resistances from S-parameters under these conditions enables analyzing their dependence on the gate and drain biases. This is fundamental to assess the portion of the output resistance that is controlled by the gate. Besides, the drain bias dependence of the drain and source resistances is also evidenced. Within the proposal, resistive components accounting for the lossy nature of the gate capacitance are incorporated into the model, which exhibits a broadband correlation with experimental data. This avoids the series resistances to be considered as frequency dependent in the model.

cond-mat.mes-hall

Calculation of the Performance of Communication Systems from Measured Oscillator Phase Noise

Oscillator phase noise (PN) is one of the major problems that affect the performance of communication systems. In this paper, a direct connection between oscillator measurements, in terms of measured single-side band PN spectrum, and the optimal communication system performance, in terms of the resulting error vector magnitude (EVM) due to PN, is mathematically derived and analyzed. First, a statistical model of the PN, considering the effect of white and colored noise sources, is derived. Then, we utilize this model to derive the modified Bayesian Cramer-Rao bound on PN estimation, and use it to find an EVM bound for the system performance. Based on our analysis, it is found that the influence from different noise regions strongly depends on the communication bandwidth, i.e., the symbol rate. For high symbol rate communication systems, cumulative PN that appears near carrier is of relatively low importance compared to the white PN far from carrier. Our results also show that 1/f^3 noise is more predictable compared to 1/f^2 noise and in a fair comparison it affects the performance less.

cs.IT