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Herve Ness

Publications and source records attributed to Herve Ness.

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Toward Tunable Magnetic Dirac Semimetals: Mn Doping of Cd$_3$As$_2$

Magnetic impurities provide a route toward increasing functionality in electronic materials, often enabling new device concepts and architectures. In the case of topological semimetals, dilute magnetic doping presents a particularly attractive approach for inducing a Dirac to Weyl phase change via time reversal symmetry breaking. However, efforts to realize changes in the electronic structure have been limited by challenges in incorporating magnetic impurities into crystals with sufficiently high electron mobilities to detect them via transport or spectroscopic techniques. Here, we demonstrate incorporation of Mn into Cd$_3$As$_2$ Dirac semimetal thin films grown by molecular beam epitaxy (MBE). Using As-rich growth conditions and [001] oriented thin films, Mn compositions of >10% are achieved. Films contain uniform distributions of Mn with no evidence of secondary phases and exhibit electron mobilities greater than 10,000-30,000 cm$^2$/Vs up to 5% Mn. An evolution in the magnetization behavior along with the emergence of a second quantum oscillation frequency at low Mn concentrations provide preliminary evidence of Mn-induced changes in the electronic structure that are consistent with a Weyl phase. This work demonstrates the potential of magnetically doping topological semimetal thin films and a pathway for synthesizing them.

cond-mat.mtrl-sci

Interplay of Quasi-Quantum Hall Effect and Coulomb Disorder in Semimetals

Low carrier densities in topological semimetals (TSMs) enable the exploration of novel magnetotransport in the quantum limit (QL). Recent findings consistent with 3D quasi-quantum Hall effect (QQHE) have positioned TSMs as promising platforms for exploring 3D quantum Hall transport, but the lack of tunability in the Fermi level has thus far limited the ability to observe a QQHE signal. Here, we tune the defect concentrations in the Dirac semimetal Cd${}_3$As${}_2$ to achieve ultra-low carrier concentrations at 2 K around $2.9\times10^{16}$cm${}^{-3}$, giving way to QQHE signal at modest fields near 10 T. At low carrier densities, where QQHE is most accessible, we find that clear QQHE is obscured by a carrier density dependent background originating from Coulomb disorder from charged point defects and Landau level broadening. Our results highlight the interplay between QQHE and Coulomb disorder, demonstrating that clear observation of QQHE in TSMs intricately depends on Fermi level and disorder magnitudes. We find that Coulomb disorder, as theoretically predicted, is an essential ingredient for understanding the magnetoresistivity for a spectrum of Fermi levels in Cd${}_3$As${}_2$, anchoring the role of defects and charged disorder in TSM applications. We discuss future constraints and opportunities in exploring 3D QQHE and quantum Hall effects in TSMs.

cond-mat.mtrl-sci

Thin film TaAs: developing a platform for Weyl semimetal devices

MX monopnictide compounds (M=Nb,Ta, X = As,P) are prototypical three-dimensional Weyl semimetals (WSMs) that have been shown in bulk single crystal form to have potential for a wide variety of novel devices due to topologically protected band structures and high mobilities. However, very little is known about thin film synthesis, which is essential to enable device applications. We synthesize TaAs(001) epilayers by molecular beam epitaxy on GaAs(001) and provide an experimental phase diagram illustrating conditions for single phase, single-crystal-like growth. We investigate the relationship between nanoscale defects and electronic structure, using angle-resolved photoemission spectroscopy, Kelvin probe microscopy and transmission electron microscopy. Our results provide a roadmap and platform for developing 3D WSMs for device applications.

cond-mat.mtrl-sci