arXiv subjects

Hidekazu Okamura

Publications and source records attributed to Hidekazu Okamura.

3 recordsLinked to original sources

arXiv2025

High-pressure electronic states in semiconductors studied by infrared spectroscopy: metallization and band gap tuning in Mg$_2$Si, InAs and InSb

In this article, a brief introduction is first given on infrared studies of materials at high pressures using a diamond anvil cell. Then, our recent results of high-pressure infrared studies are described for Mg$_2$Si, InAs, and InSb. For Mg$_2$Si, pressure-induced metallization at pressures near 10 GPa were clearly demonstrated for both carrier-doped and undoped Mg$_2$Si by large increases of reflectivity. For InAs and InSb, their band gap ($E_g$) increased rapidly and almost linearly with pressure with linear coefficients of $dE_g/dP$=84.6 and 112 meV/GPa, respectively. Obtained values of $E_g$ versus lattice parameter at high pressures are compared with those for other IIl-V semiconductors at ambient pressure, giving unique insight into effects of physical and chemical pressures on $E_g$. Above the structural transition pressures of 7 and 3 GPa for InAs and InSb, respectively, they exhibit highly metallic characteristics accompanied by high reflectivity.

cond-mat.mtrl-sci↗

arXiv2021

Hybridization-gap Formation and Superconductivity in the Pressure-induced Semimetallic Phase of the Excitonic Insulator Ta$_2$NiSe$_5$

The excitonic insulator Ta$_2$NiSe$_5$ experiences a first-order structural transition under pressure from rippled to flat layer-structure at Ps = 3 GPa, which drives the system from an almost zero-gap semiconductor to a semimetal. The pressure-induced semimetal, with lowering temperature, experiences a transition to another semimetal with a partial-gap of 0.1-0.2 eV, accompanied with a monoclinic distortion analogous to that occurs at the excitonic transition below Ps. We argue that the partial-gap originates primarily from a symmetry-allowed hybridization of Ta-conduction and Ni-valence bands due to the lattice distortion, indicative of the importance of electron-lattice coupling. The transition is suppressed with increasing pressure to Pc = 8 GPa. Superconductivity with a maximum Tsc = 1.2 K emerges around Pc, likely mediated by strongly electron-coupled soft phonons. The electron-lattice coupling is as important ingredient as the excitonic instability in Ta2NiSe5.

cond-mat.str-el↗

arXiv2012

Infrared and Terahertz Spectroscopy of Strongly Correlated Electron Systems under Extreme Conditions

Owing to its high brilliance, infrared and terahertz synchrotron radiation (IR/THz-SR) has emerged as a powerful tool for spectroscopy under extreme (i.e., technically more difficult) experimental conditions such as high pressure, high magnetic field, high spatial resolution, and a combination of these. The methodologies for pressure- and magnetic-field-dependent spectroscopy and microscopy using IR/THz-SR have advanced rapidly worldwide. By applying them in strongly correlated electron systems (SCESs), many experimental studies have been performed on their electronic structures and phonon/molecular vibration modes under extreme conditions. Here, we review the recent progress of methodologies of IR/THz-SR spectroscopy and microscopy, and the experimental results on SCESs and other systems obtained under extreme conditions.

cond-mat.str-el↗