arXiv subjects

Hideto Yanagihara

Publications and source records attributed to Hideto Yanagihara.

7 recordsLinked to original sources

arXiv2026

Valence-change-driven reduction of antiphase boundaries in spinel ferrite epitaxial films

Antiphase boundaries (APBs) formed in thin films sometimes cause severe degradation of their physical properties. In particular, a high density of APBs in spinel ferrite films generates a non-negligible magnetic dead layer near the interface. In this study, we examined the effect of post-oxidation annealing in an oxygen plasma atmosphere on Co$_{0.125}$Fe$_{2.875}$O$_4$(001) thin films grown on MgO(001) as a model system. The thickness of the magnetic dead layer was found to be significantly reduced after post-oxidation, resulting in an increase in the saturation magnetization and an improved squareness ratio. Dark-field transmission electron microscopy analysis revealed that the post-oxidation process increased the antiphase domain size, indicating a substantial reduction in APB density. Furthermore, reflection high-energy electron diffraction and x-ray diffraction measurements confirmed that the spinel crystal structure and epitaxial strain were preserved after post-oxidation. These results suggest that post-oxidation proceeds through a topotactic solid-state reaction in which Fe$^{2.5+}$ ions are oxidized to Fe$^{3+}$, accompanied by cation rearrangement across APBs, thereby reducing APB density without degrading crystallinity and leading to improved magnetic properties in spinel ferrite epitaxial films.

cond-mat.mtrl-sci↗

arXiv2026

Probing Spin Configurations in Exchange-Coupled Magnetic Bilayers with Orthogonal Anisotropies via Anomalous Hall and Nernst Effects

When two ferromagnetic thin films with different magnetic easy axes are coupled via the exchange interaction, the magnetization process becomes nontrivial. In this paper, we demonstrate that three-dimensional magnetization information in such a bilayer system can be accessed electrically by combining measurements of the anomalous Hall effect (AHE) and anomalous Nernst effect (ANE). Specifically, we investigate a CoFe$_2$O$_4$(001)/Fe bilayer, where the insulating nature of CoFe$_2$O$_4$ ensures that these transport measurements selectively probe only the conductive Fe layer. By combining the AHE and ANE results and comparing them with a simple micromagnetic simulation, we probe the magnetic configuration of antiferromagnetically coupled Fe layer and suggest the emergence of a twisted magnetic structure near the interface.

cond-mat.mtrl-sci↗

arXiv2023

Perpendicular magnetic anisotropy of an ultrathin Fe layer grown on NiO(001)

The magnetic anisotropy and magnetic interactions at the interface between Fe and NiO(001) were investigated. Depending on the growth conditions of the NiO(001) layers and the post-annealing temperature, the preferential magnetization direction of the ultrathin Fe layer grown on a NiO(001) layer changed from in-plane to a direction perpendicular to the film plane. The lattice constant of the NiO(001) layers parallel to the growth direction increased with O$_2$ flow rate, while that parallel to the in-plane were locked onto the MgO(001) substrate regardless of the growth conditions of the NiO layers. Moreover, perpendicular magnetization was observed only when the NiO layer was grown with O$_2$ flow rates higher than 2.0 sccm corresponding to oxygen-rich NiO. X-ray magnetic circular dichroism measurements revealed an enhancement in anisotropic orbital magnetic moments similar to the origin of perpendicular magnetic anisotropy at the Fe/MgO(001) interface. The interfacial magnetic anisotropy energies were 0.93 and 1.02 mJ/m$^2$ at room temperature and at 100 K, respectively, indicating less temperature dependence. In contrast, the coercivity $H_c$ exhibited a significant temperature dependence. Although no signature of exchange bias or unidirectional loop shift was observed, $H_c$ was strongly dependent on the NiO layer thickness, indicating that the exchange interaction at the interface between the ferromagnetic and antiferromagnetic layers was not negligible, despite the NiO(001) being a spin-compensated surface.

cond-mat.mtrl-sci↗

arXiv2022

Origin of Perpendicular Magnetic Anisotropy in Co$_x$Fe$_{3-x}$O$_{4+δ}$ Thin Films Studied by X-ray Magnetic Circular and Linear Dichroisms

We investigate the element-specific spin and orbital states and their roles on magnetic anisotropy in the Co-ferrite (Co$_x$Fe$_{3-x}$O$_{4+δ}$ (001)) thin films which exhibit perpendicular magnetic anisotropy (PMA). The origin of PMA in the low $x$ region ($x$ $<$ 1) can be mainly explained by the large perpendicular orbital magnetic moments in the Co$^{2+}$ (3$d^7$) states detected by X-ray magnetic circular and linear dichroisms (XMCD/XMLD). The XMLD for a PMA film ($x=0.2$) with square hysteresis curve shows the oblate charge distribution in the Co$^{2+}$ site, which is consistent with the change in local nearest neighbor distance in Co detected by extended X-ray absorption fine structure analysis. Our finding reveals that the microscopic origin of PMA in Co-ferrite comes from the enhanced orbital magnetic moments along out-of-plane [001] direction through in-plane charge distribution by tensile strain, which adds the material functionalities in spinel ferrite thin films from the viewpoint of strain and orbital magnetic moments.

cond-mat.mtrl-sci↗

arXiv2021

Strain Engineering of Magnetic Anisotropy in Epitaxial Films of Cobalt Ferrite

Perpendicular magnetic anisotropy (PMA) energy up to $K_{\mathrm{u}}=6.1\pm0.8$ MJ m$^{-3}$ is demonstrated in this study by inducing large lattice-distortion exceeding 3% at room temperature in epitaxially distorted cobalt ferrite Co$ _{x} $Fe$ _{3-x} $O$ _{4} $ (x = 0.72) (001) thin films. Although the thin film materials include no rare-earth elements or noble metals, the observed $ K_{u} $ is larger than that of the neodymium-iron-boron compounds for high-performance permanent magnets. The large PMA is attributed to the significantly enhanced magneto-elastic effects, which are pronounced in distorted films with epitaxial lattice structures upon introducing a distortion control layer of composition Mg$ _{2-x} $Sn$_{1+x}$O$ _{4} $. Surprisingly, the induced $ K_{u} $ can be quantitatively explained in terms of the agreement between the local crystal field of Co$ ^{2+} $ and the phenomenological magneto-elastic model, indicating that the linear response of induced $K_u$ is sufficiently valid even under lattice distortions as large as 3.2%. Controlling tetragonal lattice deformation using a non-magnetic spinel layer for ferrites could be a promising protocol for developing materials with large magnetic anisotropies.

cond-mat.mtrl-sci↗

arXiv2021

Spin reorientation in tetragonally distorted spinel oxide NiCo$_2$O$_4$ epitaxial films

We experimentally investigated the magnetic properties of NiCo$_2$O$_4$ epitaxial films known to be conductive oxides with perpendicular magnetic anisotropy (PMA) at room temperature. Both magneto-torque and magnetization measurements at various temperatures provide clear experimental evidence of the spin reorientation transition at which the MA changes from PMA to easy-cone magnetic anisotropy (ECMA) at a certain temperature ($T_{\rm{SR}}$). ECMA was commonly observed in films grown by pulsed laser deposition and reactive radio frequency magnetron sputtering, although $T_{\mathrm{SR}}$ is dependent on the growth method as well as the conditions. The cone angles measured from the $c$-axis increased successively at $T_{\mathrm{SR}}$ and approached a maximum of 45-50 degrees at the lowest measurement temperature of 5 K. Calculation with the cluster model suggests that the Ni$^{3+}$ ions occupying the $T_d$ site could be the origin of the ECMA. Both the magnetic properties and the results of the calculation based on the cluster model indicate that the ECMA is attributable to the cation anti-site distribution of Ni$^{3+}$, which is possibly formed during the growth process of the thin films.

cond-mat.mtrl-sci↗

arXiv2015

Roadmap for Emerging Materials for Spintronic Device Applications

The Technical Committee of the IEEE Magnetics Society has selected 7 research topics to develop their roadmaps, where major developments should be listed alongside expected timelines; (i) hard disk drives, (ii) magnetic random access memories, (iii) domain-wall devices, (iv) permanent magnets, (v) sensors and actuators, (vi) magnetic materials and (vii) organic devices. Among them, magnetic materials for spintronic devices have been surveyed as the first exercise. In this roadmap exercise, we have targeted magnetic tunnel and spin-valve junctions as spintronic devices. These can be used for example as a cell for a magnetic random access memory and spin-torque oscillator in their vertical form as well as a spin transistor and a spin Hall device in their lateral form. In these devices, the critical role of magnetic materials is to inject spin-polarised electrons efficiently into a non-magnet. We have accordingly identified 2 key properties to be achieved by developing new magnetic materials for future spintronic devices: (1) Half-metallicity at room temperature (RT); (2) Perpendicular anisotropy in nano-scale devices at RT. For the first property, 5 major magnetic materials are selected for their evaluation for future magnetic/spintronic device applications: Heusler alloys, ferrites, rutiles, perovskites and dilute magnetic semiconductors. These alloys have been reported or predicted to be half-metallic ferromagnets at RT. They possess a bandgap at the Fermi level EF only for its minority spins, achieving 100% spin polarisation at EF. We have also evaluated L10-alloys and D022-Mn-alloys for the development of a perpendicularly anisotropic ferromagnet with large spin polarisation. We have listed several key milestones for each material on their functionality improvements, property achievements, device implementations and interdisciplinary applications within 35 years time scale.

cond-mat.mtrl-sci↗