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Hikari Shinya

Publications and source records attributed to Hikari Shinya.

8 recordsLinked to original sources

A Differentiable DFT-Based Framework for Inverse Materials Design

Discovering solid-state materials with target properties remains a central challenge in computational materials science. Existing approaches -- high-throughput screening, surrogate optimization, and generative models -- require extensive evaluations or training data and extrapolate poorly to unseen compositions. Here we develop a first-principles inverse-design framework, integrating reverse-mode automatic differentiation (AD) into KKR-CPA -- the Korringa--Kohn--Rostoker method with the coherent potential approximation -- where atomic compositions are continuous variables to be optimized. Reverse-mode AD yields gradients of objective functions with respect to composition at a cost independent of the number of candidate elements, enabling gradient-based optimization to identify materials from compositional spaces spanning dozens of elements. In this framework, any computable quantity can serve as the objective. We demonstrate this generality through two contrasting applications, magnetic alloys and half-metals, yielding candidates such as (Lu$_{0.553}$Yb$_{0.447}$)(Co$_{0.759}$Fe$_{0.241}$)$_2$Fe$_3$ and FeZr(Sb$_{0.94}$Te$_{0.06}$). Our framework offers a physically grounded route from a target property to the material that realizes it.

cond-mat.mtrl-sci

Oxygen-induced Fe surface segregation at the $L1_0$-FePd(001)/graphene heterointerface for spintronics devices: a first-principles study

We theoretically investigate the atomic-scale structure of the heterointerface formed between the (001) surface of the $L1_0$-ordered iron palladium (FePd) intermetallic alloy and graphene (Gr), namely, $L1_0$-FePd(001)/Gr, which serves as an essential component in spintronic devices. Using density functional theory (DFT) calculations, we demonstrate that the topmost surface layer consisting of Pd (Pd-terminated surface) is energetically more stable than that consisting of Fe in vacuum, and that Pd-terminated surfaces are unfavorable for graphene adsorption. In contrast, under an oxygen atmosphere, the strong Fe--O bonding stabilizes Fe-terminated surfaces. The predicted Fe--O bonds on the oxidized surface are consistent with our X-ray photoelectron spectroscopy (XPS) measurements. These results reproduce the mechanism responsible for the graphene coverage observed in recent experiments. Similar oxygen-induced Fe surface segregation has been studied in heterogeneous catalysis on FePt and FePd alloys. In this work, we exploit this mechanism as a termination-engineering strategy to fabricate high-quality 2D-material/alloy heterointerfaces for nanoscale device applications.

cond-mat.mtrl-sci

Giant memory function based on the magnetic field history of resistive switching under a constant bias voltage

Memristors, which are characterized by their unique input-voltage-history-dependent resistance, have garnered significant attention for the exploration of next-generation in-memory computing, reconfigurable logic circuits, and neural networks. Memristors are controlled by the applied input voltage; however, the latent potential of their magnetic field sensitivity for spintronics applications has rarely been explored. In particular, valuable functionalities are expected to be yielded by combining their history dependence and magnetic field response. Here, for the first time, we reveal a giant memory function based on the magnetic field history of memristive switching, with an extremely large magnetoresistance ratio of up to 32,900% under a constant bias voltage, using a two-terminal Ge-channel device with Fe/MgO electrodes. We attribute this behavior to colossal magnetoresistive switching induced by the d0 ferromagnetism of Mg vacancies in the MgO layers and impact ionization breakdown in the Ge substrate. Our findings may lead to the development of highly sensitive multi-field sensors, high-performance magnetic memory, and advanced neuromorphic devices.

physics.app-ph

Influence of Ru composition deviation from stoichiometry on intrinsic spin-to-charge conversion in SrRuO3

Interconversion between charge and spin currents is a key phenomenon in realizing next-generation spintronic devices. Highly efficient spin-charge interconversion is expected to occur at band crossing points in materials with large spin-orbit interactions due to enhanced spin Berry curvature. On the other hand, if defects and/or impurities are present, they affect the electronic band structure, which in turn reduces the spin Berry curvature. Although defects and impurities are generally numerous in materials, their influence on the spin Berry curvature and, consequently, spin-charge interconversion has often been overlooked. In this paper, we perform spin-pumping experiments for stoichiometric SrRuO3 and non-stoichiometric SrRu0.7O3 films at 300 K, where the films are in paramagnetic states, to examine how Ru composition deviation from the stoichiometric condition influences the spin-to-charge conversion, showing that SrRuO3 has a larger spin Hall angle than SrRu0.7O3. We derive the band structures of paramagnetic SrRuO3 and SrRu0.75O3 using first-principles calculations, indicating that the spin Hall conductivity originating from the spin Berry curvature decreases when the Ru deficiency is incorporated, which agrees with the experimental results. Our results suggest that point-defect- and impurity control is essential to fully exploit the intrinsic spin Berry curvature and large spin-charge interconversion function of materials. These insights help us with material designs for efficient spin-charge interconversions.

cond-mat.mtrl-sci

First-principle study of spin transport property in $L1_0$-FePd(001)/graphene heterojunction

In our previous work, we synthesized a metal/2D material heterointerface consisting of $L1_0$-ordered iron-palladium (FePd) and graphene (Gr) called FePd(001)/Gr. This system has been explored by both experimental measurements and theoretical calculations. In this study, we focus on a heterojunction composed of FePd and multilayer graphene referred to as FePd(001)/$m$-Gr/FePd(001), where $m$ represents the number of graphene layers. We perform first-principles calculations to predict their spin-dependent transport properties. The quantitative calculations of spin-resolved conductance and magnetoresistance (MR) ratio (150-200%) suggest that the proposed structure can function as a magnetic tunnel junction in spintronics applications. We also find that an increase in $m$ not only reduces conductance but also changes transport properties from the tunneling behavior to the graphite $π$-band-like behavior. Additionally, we investigate the spin-transfer torque-induced magnetization switching behavior of our \color{blue} junction structures \color{black} using micromagnetic simulations. Furthermore, we examine the impact of lateral displacements (``sliding'') at the interface and find that the spin transport properties remain robust despite these changes; this is the advantage of two-dimensional material hetero-interfaces over traditional insulating barrier layers such as MgO.

cond-mat.mtrl-sci

Low-temperature acanthite-like phase of Cu$_{2}$S: A first-principles study on electronic and transport properties

The mobility and disorder in the lattice of Cu atoms as liquid-like behavior is an important characteristic affecting the thermoelectric properties of Cu$_{2}$S. In this study, using a theoretical model called acanthite-like structure for Cu$_{2}$S at a low-temperature range, we systematically investigate the electronic structure, intrinsic defect formation, and transport properties by first-principles calculations. Thereby, previous experimental reports on the indirect bandgap nature of Cu$_{2}$S were confirmed in this work with an energy gap of about 0.9-0.95 eV. As a result, the optical absorption coefficient estimated from this model also gives a potential value of $α> 10^{4}$ cm$^{-1}$ in the visible spectrum range. According to the bonding analysis and formation energy aspect, Cu vacancy is the most preferred defect to form in Cu$_{2}$S, which primarily affects the conductive behavior as a $p$-type, as experimentally observed. Finally, the transport properties of Cu$_{2}$S system were successfully reproduced using an electron-phonon scattering method, highlighting the important role of relaxation time prediction in conductivity estimation instead of regarding it as a constant.

cond-mat.mtrl-sci

Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures

Material structures containing tetrahedral FeAs bonds, depending on their density and geometrical distribution, can host several competing quantum ground states ranging from superconductivity to ferromagnetism. Here we examine structures of quasi two-dimensional (2D) layers of tetrahedral Fe-As bonds embedded with a regular interval in a semiconductor InAs matrix, which resembles the crystal structure of Fe-based superconductors. Contrary to the case of Fe-based pnictides, these FeAs/InAs superlattices (SLs) exhibit ferromagnetism, whose Curie temperature (Tc) increases rapidly with decreasing the InAs interval thickness t_InAs (Tc ~ t_InAs^-3), and an extremely large magnetoresistance up to 500% that is tunable by a gate voltage. Our first principles calculations reveal the important role of disordered positions of Fe atoms in the establishment of ferromagnetism in these quasi-2D FeAs-based SLs. These unique features mark the FeAs/InAs SLs as promising structures for spintronic applications.

cond-mat.mtrl-sci

First-principles calculation of electronic density of states and Seebeck coefficient in transition-metal-doped Si-Ge alloys

High $ZT$ value and large Seebeck coefficient have been reported in the nanostructured Fe-doped Si-Ge alloys. In this work, the large Seebeck coefficient in Fe-doped Si-Ge systems is qualitatively reproduced from the computed electronic density of states, where a hybrid functional, HSE06, is used for an exchange-correlation functional, as well as a special quasi-random structure (SQS) for a disordered atomic configuration. Furthermore, by replacing Fe with other transition metals, such as Mn, Co, Ni, Cu, Zn, and Au, a better dopant that produces a larger Seebeck coefficient in Si-Ge alloy systems is explored.

cond-mat.mtrl-sci