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Hilal Cansizoglu

Publications and source records attributed to Hilal Cansizoglu.

12 recordsLinked to original sources
arXiv2026

Scaling Alternating-Bias-Assisted Annealing for Precision Transmon Frequency Targeting on Superconducting Quantum Processors

Recent advances in the alternating-bias-assisted annealing (ABAA) technique have successfully mitigated intrinsic Josephson-junction (JJ) fabrication variations. This new technique enables precision qubit frequency tuning alongside simplicity. However, it is critical to enhance tuning throughput and yield while investigating the factors that drive targeting performance as the technology scales. Here, we characterize ABAA tuning performance within a 150-mm wafer process flow and extend this technique to simultaneous, multi-channel tuning, demonstrating that a wafer-scale JJ resistance tuning precision of $\sigma=0.50\pm0.05\%$ alongside a component-level yield of $\ge 98.8\%$ can be achieved. Furthermore, we demonstrate a strong correlation between yield, tuning speed, and junction breakdown voltage, establishing the latter as a vital process control parameter for meeting production goals. Finally, we demonstrate a successful implementation of ABAA tuning on a quad-module quantum processor (Rigetti Cepheus-1-36Q), where we achieve an empirical frequency targeting precision of $\sigma \sim 30\text{ MHz}$ in both qubit and qubit-qubit detuning frequencies, contributing to high median two-qubit gate fidelities. These results confirm the efficacy and scalability of ABAA for high-precision Hamiltonian targeting, a critical enabler for modular superconducting quantum processor technology.

quant-ph↗
arXiv2026

Oxygen distribution and segregation at grain boundaries in Nb and Ta-encapsulated Nb thin films for superconducting qubits

We report on atomic-scale analyses of oxygen distribution and segregation at grain boundaries (GBs) of Nb and Ta-encapsulated Nb (Ta/Nb) thin films for superconducting qubits using atom-probe tomography (APT) and transmission electron microscopy (TEM). We observe oxygen segregation at grain boundaries (GBs) relative to the oxygen concentration within the grains for both Nb and Ta-capped Nb thin films for superconducting qubits and find that higher oxygen concentration in the interior of Nb grains lead to greater oxygen segregation levels at GBs. This finding emphasizes that controlling oxygen impurities in Nb during film deposition and fabrication processing is important to reduce the level of oxygen segregation at GBs in Nb. The enrichment factor (Cgb/Cgrain) for oxygen segregation at GBs in Nb is 2.7 (error bar: 0.3) for Nb films, and Ta-capped Nb thin films exhibit slightly reduced Nb GB enrichment factors of 2.3 (error bar: 0.3) while GBs in the Ta capping layer itself possess higher enrichment factors of 3.0 (error bar: 0.3). We hypothesize that the Ta capping layer can trap oxygen and thereby affect oxygen in-diffusion and segregation at GBs in the underlying Nb thin films. Finally, we find that increases in the oxygen concentration in both Nb grains and GBs correlate with a suppression in the critical temperature for superconductivity (Tc). Together, our comparative chemical and charge transport property analyses provide atomic-scale insights into a potential mechanism contributing to decoherence in superconducting qubits.

cond-mat.supr-con↗
arXiv2025

Identifying Materials-Level Sources of Performance Variation in Superconducting Transmon Qubits

The Superconducting Materials and Systems (SQMS) Center, a DOE National Quantum Information Science Research Center, has conducted a comprehensive and coordinated study using superconducting transmon qubit chips with known performance metrics to identify the underlying materials-level sources of device-to-device performance variation. Following qubit coherence measurements, these qubits of varying base superconducting metals and substrates have been examined with various nondestructive and invasive material characterization techniques at Northwestern University, Ames National Laboratory, and Fermilab as part of a blind study. We find trends in variations of the depth of the etched substrate trench, the thickness of the surface oxide, and the geometry of the sidewall, which when combined, lead to correlations with the T$_1$ lifetime across different devices. In addition, we provide a list of features that varied from device to device, for which the impact on performance requires further studies. Finally, we identify two low-temperature characterization techniques that may potentially serve as proxy tools for qubit measurements. These insights provide materials-oriented solutions to not only reduce performance variations across neighboring devices, but also to engineer and fabricate devices with optimal geometries to achieve performance metrics beyond the state-of-the-art values.

quant-ph↗
arXiv2024

Enhanced Superconducting Qubit Performance Through Ammonium Fluoride Etch

The performance of superconducting qubits is often limited by dissipation and two-level systems (TLS) losses. The dominant sources of these losses are believed to originate from amorphous materials and defects at interfaces and surfaces, likely as a result of fabrication processes or ambient exposure. Here, we explore a novel wet chemical surface treatment at the Josephson junction-substrate and the substrate-air interfaces by replacing a buffered oxide etch (BOE) cleaning process with one that uses hydrofluoric acid followed by aqueous ammonium fluoride. We show that the ammonium fluoride etch process results in a statistically significant improvement in median $\text{T}_1$ by $\sim22\%$ ($p=0.002$), and a reduction in the number of strongly-coupled TLS in the tunable frequency range. Microwave resonator measurements on samples treated with the ammonium fluoride etch prior to niobium deposition also show $\sim33\%$ lower TLS-induced loss tangent compared to the BOE treated samples. As the chemical treatment primarily modifies the Josephson junction-substrate interface and substrate-air interface, we perform targeted chemical and structural characterizations to examine materials' differences at these interfaces and identify multiple microscopic changes that could contribute to decreased TLS.

cond-mat.mtrl-sci↗
arXiv2024

Precision frequency tuning of tunable transmon qubits using alternating-bias assisted annealing

Superconducting quantum processors are one of the leading platforms for realizing scalable fault-tolerant quantum computation (FTQC). The recent demonstration of post-fabrication tuning of Josephson junctions using alternating-bias assisted annealing (ABAA) technique and a reduction in junction loss after ABAA illuminates a promising path towards precision tuning of qubit frequency while maintaining high coherence. Here, we demonstrate precision tuning of the maximum $|0\rangle\rightarrow |1\rangle$ transition frequency ($f_{01}^{\rm max}$) of tunable transmon qubits by performing ABAA at room temperature using commercially available test equipment. We characterize the impact of junction relaxation and aging on resistance spread after tuning, and demonstrate a frequency equivalent tuning precision of 7.7 MHz ($0.17\%$) based on targeted resistance tuning on hundreds of qubits, with a resistance tuning range up to $18.5\%$. Cryogenic measurements on tuned and untuned qubits show evidence of improved coherence after ABAA with no significant impact on tunability. Despite a small global offset, we show an empirical $f_{01}^{\rm max}$ tuning precision of 18.4 MHz by tuning a set of multi-qubit processors targeting their designed Hamiltonians. We experimentally characterize high-fidelity parametric resonance iSWAP gates on two ABAA-tuned 9-qubit processors with fidelity as high as $99.51\pm 0.20\%$. On the best-performing device, we measured across the device a median fidelity of $99.22\%$ and an average fidelity of $99.13\pm 0.12 \%$. Yield modeling analysis predicts high detuning-edge-yield using ABAA beyond the 1000-qubit scale. These results demonstrate the cutting-edge capability of frequency targeting using ABAA and open up a new avenue to systematically improving Hamiltonian targeting and optimization for scaling high-performance superconducting quantum processors.

quant-ph↗
arXiv2024

Transport signatures of phase fluctuations in superconducting qubits

Josephson junctions supply the nonlinear inductance element in superconducting qubits. In the widely used transmon configuration, where the junction is shunted by a large capacitor, the low charging energy minimizes the sensitivity of the qubit to charge noise while maintaining the necessary anharmonicity to qubit states. We report here low-frequency transport measurements on small standalone junctions and identically fabricated capacitively-shunted junctions that show two distinct features normally attributed to small capacitance junctions near zero bias: reduced switching currents and prominent finite resistance associated with phase diffusion in the current-voltage characteristic. Our transport data reveals the existence of phase fluctuations in transmons arising from intrinsic junction capacitance.

cond-mat.mes-hall↗
arXiv2024

Systematic Improvements in Transmon Qubit Coherence Enabled by Niobium Surface Encapsulation

We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different capping materials, such as tantalum, aluminum, titanium nitride, and gold, and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T$_1$ relaxation times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 300 microseconds, with maximum values up to 600 microseconds, that represent the highest lifetimes to date for superconducting qubits prepared on both sapphire and silicon. Our comparative structural and chemical analysis suggests why amorphous niobium oxides may induce higher losses compared to other amorphous oxides. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables even further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.

quant-ph↗
arXiv2022

Multi-modal electron microscopy study on decoherence sources and their stability in Nb based superconducting qubit

Niobium is commonly used for superconducting quantum systems as readout resonators, capacitors, and interconnects. The coherence time of the superconducting qubits is mainly limited by microwave dissipation attributed to two-level system defects at interfaces, such as the Nb/Si and Nb/air interface. One way to improve the Nb/air interface quality is by thermal annealing, as shown by extensive studies in 3D superconducting radio frequency (SRF) cavities. However, it is unclear how the microstructure and chemistry of the interface structures change during heat treatment. To address this knowledge gap, we comprehensively characterized Nb films deposited on Si wafers by physical vapor deposition, including (1) an Nb film from a transmon and (2) an Nb film without any patterning step, using an aberration-corrected transmission electron microscope. Both Nb films exhibit columnar growth with strong [110] textures. There is a double layer between the Nb film and Si substrate, which are amorphous niobium silicides with different Nb and Si concentrations. After in-situ heating of the heterostructure at 360°C inside the microscope, the composition of the double layers at the Nb-Si interface remains almost the same despite different thickness changes. The initial amorphous niobium oxide layer on Nb surface decomposes into face-centered cubic Nb nanograins in the amorphous Nb-O matrix upon heating.

cond-mat.mtrl-sci↗
arXiv2021

Avalanche Photodetectors with Photon Trapping Structures for Biomedical Imaging Applications

Enhancing photon detection efficiency and time resolution in photodetectors in the entire visible range is critical to improve the image quality of time-of-flight (TOF)-based imaging systems and fluorescence lifetime imaging (FLIM). In this work, we evaluate the gain, detection efficiency, and timing performance of avalanche photodiodes (APD) with photon trapping nanostructures for photons with 450 and 850 nm wavelengths. At 850 nm wavelength, our photon trapping avalanche photodiodes showed 30 times higher gain, an increase from 16% to >60% enhanced absorption efficiency, and a 50% reduction in the full width at half maximum (FWHM) pulse response time close to the breakdown voltage. At 450 nm wavelength, the external quantum efficiency increased from 54% to 82%, while the gain was enhanced more than 20-fold. Therefore, silicon APDs with photon trapping structures exhibited a dramatic increase in absorption compared to control devices. Results suggest very thin devices with fast timing properties and high absorption between the near-ultraviolet and the near infrared region can be manufactured for high-speed applications in biomedical imaging. This study paves the way towards obtaining single photon detectors with photon trapping structures with gains above 10^6 for the entire visible range

physics.optics↗
arXiv2020

Maximizing absorption in photon trapping ultra-fast silicon photodetectors

Silicon photodetectors operating at near-infrared wavelengths with high-speed and high sensitivity are becoming critical for emerging applications, such as Light Detection and Ranging Systems (LIDAR), quantum communications, and medical imaging. However, such photodetectors present a bandwidth-absorption trade-off at those wavelengths that have limited their implementation. Photon trapping structures address this trade-off by enhancing the light-matter interactions, but maximizing their performance remains a challenge due to a multitude of factors influencing their design and fabrication. In this paper, strategies to improve the photon trapping effect while enhancing the speed of operation are investigated. By optimizing the design of photon trapping structures and experimentally integrated them in high-speed photodetectors, a simultaneous broadband absorption efficiency enhancement up to 1000% and a capacitance reduction of more than 50% has been achieved. Such work also allows to present empirical equations to correlate the quantum efficiency of photodetectors with the physical properties of the photon-trapping structures, material characteristics, and limitations of the fabrication technologies. The results obtained, open routes towards designing cost-effective CMOS integrated.

physics.optics↗