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Himanshu Saini

Publications and source records attributed to Himanshu Saini.

2 recordsLinked to original sources

WloopPHI: A tool for ab initio characterization of Weyl semimetals

WloopPHI is a Python code that expands the features of WIEN2k, a full-potential all-electron density functional theory package, by the characterization of Weyl semimetals. It enables the calculation of the chirality (or "monopole charge") associated with Weyl nodes and nodal lines. The theoretical methodology for the calculation of the chirality is based on an extended Wilson loop method and a Berry phase approach. We validate the code using TaAs, which is a well-characterized Weyl semimetal, both theoretically and experimentally. Afterwards, we applied the method to the characterization of YRh$_6$Ge$_4$ and found two sets of Weyl points (ca. 0.2 eV below the Fermi energy) together with a topological nodal line (protected by mirror symmetry) crossing the Fermi energy and mapped their chiralities.

cond-mat.mtrl-sci

Band alignment of monolayer CaP$_3$, CaAs$_3$, BaAs$_3$ and the role of $p$-$d$ orbital interactions in the formation of conduction band minima

Recently, a number of new two-dimensional (2D) materials based on puckered phosphorene and arsenene have been predicted with moderate band gaps, good absorption properties and carrier mobilities superior to transition metal dichalcogenides. For heterojunction applications, it is important to know the relative band alignment of these new 2D materials. We report the band alignment of puckered CaP$_3$, CaAs$_3$ and BaAs$_3$ monolayers at the quasiparticle level of theory (G$_0$W$_0$), calculating band offsets for isolated monolayers according to the electron affinity rule. Our calculations suggest that monolayer CaP$_3$, CaAs$_3$ and BaAs$_3$ all form type-II (staggered) heterojunctions. Their quasiparticle gaps are 2.1 (direct), 1.8 (direct) and 1.5 eV (indirect), respectively. We also examine trends in the electronic structure in the light of chemical bonding analysis. We show that the indirect band gap in monolayer BaAs$_3$ is caused by relatively strong As $3p$ - Ba $5d$ bonding interactions that stabilize the conduction band away from the $Γ$ point between $Γ$ and $S$.

cond-mat.mtrl-sci