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Hiroshi Hara

Publications and source records attributed to Hiroshi Hara.

At least 19 recordsLinked to original sources
arXiv2019

Pressure-induced superconductivity in SnSb2Te4

We report the discovery of a new superconductor from phase change materials SnSb2Te4. Single crystals of SnSb2Te4 were grown using a conventional melting-growth method. The sample resistance under pressure was measured using an originally designed diamond anvil cell with boron-doped diamond electrodes. The pressure dependence of the resistance has been measured up to 32.6 GPa. The superconducting transition of SnSb2Te4 appeared at 2.1 K(Tconset) under 8.1 GPa, which was further increased with applied pressure to a maximum onset transition temperature 7.4K under 32.6 GPa.

cond-mat.mtrl-sci↗
arXiv2019

Fabrication of Superconducting YBa2Cu4O8 Film via Coprecipitation

We have successfully synthesized the c-axis oriented YBa2Cu4O8 (Y-124) film on a SrTiO3 (1 0 0) substrate via a coprecipitation and a dip-coating method. The precipitations including Y, Ba and Cu ions were obtained using their metal nitrates solution and the aqueous solution of sodium hydroxide and oxalic acid. Superconducting transition of the synthesized film was observed at 64-70 K corresponding to bulk Y-124 in the magnetization and resistance measurement. The developed method is suitable to synthesize superconducting Y-124 films for technological applications.

cond-mat.supr-con↗
arXiv2019

Pressure Effect in Bi-2212 and Bi-2223 Cuprate Superconductor

We report the pressure effect in Bi2Sr2Ca2Cu3O10+δ (Bi-2223) single crystal with a small amount of intergrowth of Bi2Sr2CaCu2O8+δ (Bi-2212). Their superconducting transition temperatures Tcs showed a domelike shape as a function of pressure, which showed a good agreement with the general relation between the carrier concentration and Tc. Our experimental results indicate that high pressure can induce effective carrier doping into the multilayered high-Tc cuprate superconductor

cond-mat.supr-con↗
arXiv2019

Synthesis of Hg-based cuprate superconductors $HgBa_{2}Ca_{n-1}Cu_{n}O_{2(n+1)+δ}$ by CsCl flux additional method

We have succeeded in the synthesis of Re-doped $HgBa_{2}Ca_{n-1}Cu_{n}O_{2(n+1)+δ}$ quickly by a sealed tube technique with a bit of CsCl flux. Powder X-ray diffraction measurement revealed that the single phases of Re-doped $HgBa_{2}CuO_{4+δ}$ (Hg1201), $HgBa_{2}CaCu_{2}O_{6+δ}$ (Hg1212), and $HgBa_{2}Ca_{2}Cu_{3}O_{8+δ}$ (Hg1223) formed in 4 h. The sample grains exhibited plate-like crystals with the sizes of 20$\times$20$\times$1 $μm^{3}$ and the chemical compositions of Hg1201, Hg1212, and Hg1223. The superconducting transitions were observed at 25 K for Hg1201, 122 for Hg1212, and 133 K for Hg1223 in the magnetic susceptibility. These results indicate that the developed method is useful for the fabrication of Hg-based superconducting wires.

cond-mat.supr-con↗
arXiv2019

Data-driven Exploration of Pressure-Induced Superconductivity in AgIn$_{5}$Se$_{8}$

Candidates compounds for new thermoelectric and superconducting materials, which have narrow band gap and flat bands near band edges, were exhaustively searched by a high-throughput first-principles calculation from an inorganic materials database named AtomWork. We focused on AgIn$_{5}$Se$_{8}$ which has high density of state near the Fermi level. AgIn$_{5}$Se$_{8}$ was successfully synthesized as single crystals using a melt and slow cooling method. The single-crystal X-ray diffraction analysis revealed the obtained crystal is high quality without deficiencies. The valence states in AgIn$_{5}$Se$_{8}$ were determined to be Ag1+, In3+ and Se2- in accordance with a formal charge by the core level X-ray photoelectron spectroscopy analysis. The electrical resistance was evaluated under high pressure using a diamond anvil cell with boron-doped diamond electrodes. Although the sample was insulator with a resistance of above 40 MΩ at ambient pressure, the resistance markedly decreased with increase of the pressure, and a pressure-induced superconducting transition was discovered at 3.4 K under 52.5 GPa. The transition temperature increased up to 3.7 K under further pressure of 74.0 GPa.

cond-mat.supr-con↗
arXiv2019

Pressure-induced Superconductivity in Tin Sulfide

Tin sulfide (SnS) was successfully synthesized in single crystals by a melt and slow-cooling method. The obtained sample was characterized by an X-ray diffraction, an energy dispersive spectrometry, and an X-ray photoelectron spectroscopy. Electrical transport properties in SnS were investigated under high pressure using a diamond anvil cell with boron-doped metallic diamond electrodes and undoped diamond insulating layer. We successfully observed an insulator to metal transition from 12.5 GPa and pressure-induced superconductivity at 5.8 K under 47.8 GPa as predicted by a theoretical calculation.

cond-mat.supr-con↗
arXiv2018

Pressure-induced Insulator to Metal Transition of Mixed Valence Compound Ce(O,F)SbS$_{2}$

Transport properties of Ce$_{0.85}$F0.15SbS$_{2}$ and undoped CeOSbS$_{2}$ under high pressure were investigated experimentally and theoretically. Electrical resistivity measurements of the Ce$_{0.85}$F0.15SbS$_{2}$ single crystals were performed under various high pressures using a diamond anvil cell with boron-doped diamond electrodes. The samples showed the insulator to metal transition by applying high pressure up to 30-40 GPa. On the other hand, the undoped CeOSbS$_{2}$ showed almost same transport property with the F-doped sample under high pressure. The valence state analysis using X-ray photoelectron spectroscopy revealed a simple valence state of Ce3+ in Ce$_{0.85}$F0.15SbS$_{2}$ and mixed valence state between Ce3+ and Ce4+ in undoped CeOSbS$_{2}$. The valence fluctuation in Ce carried out the comparable transport nature in the both samples. A band calculation suggests that the undoped CeOSbS$_{2}$ could be metallic under high pressure of 30 GPa in accordance with the experimental results. A superior thermoelectric property of power factor in CeOSbS$_{2}$ was estimated under high pressure around 20 GPa in comparison with that of ambient pressure.

cond-mat.mtrl-sci↗
arXiv2018

Single Crystal Growth of Cuprate Superconductor (Lu$_{0.8}$Nd$_{0.2}$)Ba$_2$Cu$_4$O$_8$ by KOH Flux Method

Single crystals of Nd-substituted LuBa$_2$Cu$_4$O$_8$ were successfully grown by the KOH flux method. The single phase of Lu$_{1-x}$Nd$_x$Ba$_2$Cu$_4$O$_8$ [(Lu,Nd)124] formed at $x = 0.2$. The compound crystallized as orthorhombic Ammm structure with lattice constants of a = 3.835(3) Å, b = 3.879(2) Å and c = 27.195(6) Å. Single crystal structural analysis demonstrated that the Nd ion partially occupied the Lu site. The (Lu,Nd)124 exhibited the superconducting transition at ~75 K in the magnetic susceptibility and resistivity. The $T_c$ and the c-axis of the (Lu,Nd)124 corresponded to Tm124. These results indicate that RE124 equivalent to the one composed of single RE element is obtained by combination of two RE elements.

cond-mat.supr-con↗
arXiv2018

Data-driven Exploration of New Pressure-induced Superconductivity in PbBi$_2$Te$_4$ with Two Transition Temperatures

Candidates compounds for new thermoelectric and superconducting materials, which have narrow band gap and flat bands near band edges, were exhaustively searched by the high-throughput first-principles calculation from an inorganic materials database named AtomWork. We focused on PbBi$_2$Te$_4$ which has the similar electronic band structure and the same crystal structure with those of a pressure-induced superconductor SnBi2Se4 explored by the same data-driven approach. The PbBi$_2$Te$_4$ was successfully synthesized as single crystals using a melt and slow cooling method. The core level X-ray photoelectron spectroscopy analysis revealed Pb2+, Bi3+ and Te2- valence states in PbBi$_2$Te$_4$. The thermoelectric properties of the PbBi$_2$Te$_4$ sample were measured at ambient pressure and the electrical resistivity was also evaluated under high pressure using a diamond anvil cell with boron-doped diamond electrodes. The resistivity decreased with increase of the pressure, and two pressure-induced superconducting transitions were discovered at 3.4 K under 13.3 GPa and at 8.4 K under 21.7 GPa. The data-driven approach shows promising power to accelerate the discovery of new thermoelectric and superconducting materials.

cond-mat.supr-con↗
arXiv2018

Pressure-induced Superconductivity in Sulfur-doped SnSe Single Crystal Using Boron-doped Diamond Electrode-prefabricated Diamond Anvil Cell

Sulfur-doped SnSe single crystal was successfully synthesized using a melt and slow-cooling method. The chemical composition and valence state of the obtained sample were analyzed by X-ray photoelectron spectroscopy. The pressure range of a diamond anvil cell with boron-doped diamond electrodes was upgraded to 104 GPa using nano-polycrystalline diamond anvil to investigate a pressure effect for the sample. Electrical resistivity measurements of sulfur-doped SnSe single crystal showed the insulator-metal-superconductor transition by applying high pressure up to 75.9 GPa.

cond-mat.supr-con↗
arXiv2018

Two Pressure-induced Superconducting Transitions in SnBi$_2$Se$_4$ Explored by Data-driven Materials Search: New Approach to Develop Novel Functional Materials Including Thermoelectric and Superconducting Materials

Candidates for new thermoelectric and superconducting materials, which have narrow band gap and flat bands near band edges, were searched by the high-throughput first-principles calculation from an inorganic materials database. The synthesized SnBi$_2$Se$_4$ among the target compounds showed a narrow band gap of 354 meV, and a thermal conductivity of 1 W/Km at ambient pressure. The sample SnBi$_2$Se$_4$ showed a metal-insulator transition at 11.1 GPa, as predicted by a theoretical estimation. Furthermore, the two pressure-induced superconducting transitions were discovered at under 20.2 GPa and 47.3 GPa. The data-driven search is a promising approach to discover new functional materials.

cond-mat.supr-con↗
arXiv2018

Diamond anvil cell using boron-doped diamond electrodes covered with undoped diamond insulating layer

Diamond anvil cell using boron-doped metallic diamond electrodes covered with undoped diamond insulating layer have been developed for electrical transport measurements under high pressure. These designed diamonds were grown on a bottom diamond anvil via a nanofabrication process combining microwave plasma-assisted chemical vapor deposition and electron beam lithography. The resistance measurements of high quality FeSe superconducting single crystal under high pressure were successfully demonstrated by just putting the sample and gasket on the bottom diamond anvil directly. The superconducting transition temperature of FeSe single crystal was enhanced up to 43 K by applying uniaxial-like pressure.

cond-mat.supr-con↗
arXiv2017

Observation of Zero Resistance in As-Electrodeposited FeSe

Superconducting FeSe films were electrochemically deposited on rolling-assisted biaxially textured substrate (RABiTS) tape. We observed zero resistivity in the as-electrodeposited FeSe film prepared on the RABiTS when the appropriate voltage was applied while it was dipped into the solution. When the RABiTS tape was dipped in the solution without applying voltage, a thin Se film was deposited on the substrate. The compositional ratio of the FeSe film got closer to the stoichiometric ratio with decreasing the dipping time before applying voltage.

cond-mat.supr-con↗
arXiv2017

Electronic Transport Properties of Carrier Controlled SnSe Single Crystals

We found that the electronic transport property of SnSe single crystals was sensitive to oxygen content. Semiconducting SnSe single crystals were obtained by using Sn of grain form as a starting material while powder Sn resulted in metallic SnSe. X-ray photoelectron spectroscopy analysis revealed that the surfaces of raw Sn were oxidized, where the volume fraction was relatively low in grain Sn. This demonstrates that contamination of oxygen causes metallic behavior in grown SnSe single crystals.

cond-mat.mtrl-sci↗
arXiv2017

Phase-separation control of K$_x$Fe$_{2-y}$Se$_2$ superconductor through rapid-quenching process

K$_x$Fe$_{2-y}$Se$_2$ exhibits an iron-vacancy ordering at $T_{\rm s} {\sim}270°$C and separates into two phases: a minor superconducting (iron-vacancy-disordered) phase and a major non-superconducting (iron-vacancy-ordered) phase. The microstructural and superconducting properties of this intermixture can be tuned by an appropriate control of the quenching process through $T_{\rm s}$. A faster quenching rate leads to a finer microstructure and a suppression of formation of the non-superconducting phase by up to 50%. Nevertheless, such a faster cooling rate does induce a monotonic reduction in the superconducting transition temperature (from 30.7 K down to 26.0 K) and, simultaneously, a decrease in the iron content within the superconducting phase such that the compositional ratio changed from K$_{0.35}$Fe$_{1.83}$Se$_2$ to K$_{0.58}$Fe$_{1.71}$Se$_2$.

cond-mat.supr-con↗
arXiv2014

Superconductivity in FeTe0.8S0.2 induced by battery-like reaction

Superconductivity is successfully induced by utilizing a battery-like reaction found in a typical Li-ion battery. Excess Fe in FeTe0.8S0.2 is electrochemically de-intercalated by applying a voltage in a citric acid solution. The superconducting properties improve with an increase in the applied voltage up to 1.5 V. This result suggests that an electrochemical reaction can be used as a novel method to develop new superconducting materials.

cond-mat.supr-con↗
arXiv2013

Coexistence of bulk superconductivity and ferromagnetism in CeO1-xFxBiS2

We show the observation of the coexistence of bulk superconductivity and ferromagnetism in CeO1-xFxBiS2(x = 0 - 1.0) prepared by annealing under high-pressure. In CeO1-xFxBiS2 system, both superconductivity and two types of ferromagnetism with respective magnetic transition temperatures of 4.5 K and 7.5 K are induced upon systematic F substitution. This fact suggests that carriers generated by the substitution of O by F are supplied to not only the BiS2 superconducting layers but also the CeO blocking layers. Furthermore, the highest superconducting transition temperature is observed when the ferromagnetism is also enhanced, which implies that superconductivity and ferromagnetism are linked to each other in the CeO1-xFxBiS2 system.

cond-mat.supr-con↗