arXiv subjects

Hiroshi Ikuta

Publications and source records attributed to Hiroshi Ikuta.

16 recordsLinked to original sources

arXiv2026

Altermagnetic spin-split Fermi surfaces in CrSb revealed by quantum oscillation measurements

We report a comprehensive quantum oscillation study of the prototypical altermagnet CrSb, combining high-field magnetotransport and torque measurements with DFT + $U$ calculations including spin-orbit coupling. Multiple quantum oscillation frequencies were observed and tracked over wide angular ranges. The measured frequency branches are consistently explained by the spin-split Fermi surfaces arising from the altermagnetic electronic structure. Our determined Fermi surface reveals that bands 1 and 2 form closed pockets centered at the A point, rather than the tubular $c$-axis-open sheets or $Γ$-centered closed pockets proposed in previous studies. Our findings establish the Fermi-surface topology of CrSb and provide a firm basis for exploring emergent phenomena in altermagnetic materials.

cond-mat.mtrl-sci↗

arXiv2025

Broadband nonlinear Hall response and multiple wave mixing in a room temperature altermagnet

Crystalline symmetries determine the linear and nonlinear response of materials to external stimuli such as mechanical pressure and electromagnetic fields, governing phenomena such as piezoelectricity, optical activity, and multiple wave mixing with wide ranging technological applications. Altermagnets present a new class of materials with magnetic crystalline order where specific crystal symmetry operations connect antiferromagnetic sublattices, leading to non-relativistic spin-splitting of the electronic band structure. Hence, the electric material properties of altermagnets should uniquely mirror these underlying symmetry properties, potentially giving rise to novel phenomena in response to external driving fields. Here, we report the discovery of a broadband third-order nonlinear anomalous Hall effect in altermagnetic CrSb at room temperature. The comparison of our observations with symmetry analyses and model calculations shows that this nonlinear Hall response is induced by the nonlinear electric susceptibility of a Berry curvature quadrupole, which exists within the spin-split band structure of CrSb and is characterized by the underlying crystalline and magnetic symmetries. We then utilize this third-order nonlinear electric susceptibility of CrSb to realize a multiple wave mixing device with pronounced four wave mixing output, which could, in principle, be extended to THz frequencies. Our study discovers that the crystalline magnetic order of altermagnets determines their nonlinear electric material properties, which could facilitate applications in high-frequency electronics, THz generation, communication networks, and energy harvesting.

cond-mat.mes-hall↗

arXiv2024

Structural analysis and transport properties of [010]-tilt grain boundaries in Fe(Se,Te)

Understanding the nature of grain boundaries is a prerequisite for fabricating high-performance superconducting bulks and wires. For iron-based superconductors [e.g. Ba(Fe,Co)$_2$As$_2$, Fe(Se,Te), and NdFeAs(O,F)], the dependence of the critical current density $J_\mathrm{c}$ on misorientation angle ($θ_\mathrm{GB}$) has been explored on [001]-tilt grain boundaries, but no data for other types of orientations have been reported. Here, we report on the structural and transport properties of Fe(Se,Te) grown on CeO$_2$-buffered symmetric [010]-tilt roof-type SrTiO$_3$ bicrystal substrates by pulsed laser deposition. X-ray diffraction and transmission electron microscopy revealed that $θ_\mathrm{GB}$ of Fe(Se,Te) was smaller whereas $θ_\mathrm{GB}$ of CeO$_2$ was larger than that of the substrate. The difference in $θ_\mathrm{GB}$ between the CeO$_2$ buffer layer and the substrate is getting larger with increasing $θ_\mathrm{GB}$. For $θ_\mathrm{GB}\geq24^\circ$ of the substrates, $θ_\mathrm{GB}$ of Fe(Se,Te) was zero, whereas $θ_\mathrm{GB}$ of CeO$_2$ was continuously increasing. The inclined growth of CeO$_2$ can be explained by the geometrical coherency model. The $c$-axis growth of Fe(Se,Te) for $θ_\mathrm{GB}\geq24^\circ$ of the substrates is due to the domain matching epitaxy on (221) planes of CeO$_2$. Electrical transport measurements confirmed no reduction of inter-grain $J_\mathrm{c}$ for $θ_\mathrm{GB}\leq9^\circ$, indicative of strong coupling between the grains.

cond-mat.supr-con↗

arXiv2024

High mobility charge transport in a multicarrier altermagnet CrSb

A newly identified magnetic phase called altermagnet is being actively studied because of its unprecedented spin-dependent phenomena. Among the candidate materials, CrSb has a particularly high ordering temperature and a large spin-splitting energy, but its transport properties have remained unexplored. In this study, we report the magnetotransport properties of CrSb measured on single crystals. We found that the Hall resistivity shows a nonlinear dependence on the magnetic field at low temperatures. From symmetry-based considerations, however, this behavior can not be attributed to an anomalous Hall effect, but to a multicarrier effect. A multicarrier fitting to the in-plane conductivity tensor revealed the presence of carriers with high mobility in CrSb, which is an advantage for efficient spin current generation.

cond-mat.mtrl-sci↗

arXiv2024

Single Crystal Growth and Transport Properties of van der Waals Materials $AB$Te$_\mathbf{4}$ ($A/B$ = Ti, Zr, Hf)

Monolayers of $AB$Te$_4$ ($A$/$B$ = Ti, Zr, Hf) were theoretically predicted to be two-dimensional topological insulators, but little has been known about the physical properties of these compounds. Here, we report on the single crystal growth, bulk transport properties, and band structure calculations of these compounds. The magnetotransport properties indicate that all three compounds are multi-carrier systems. The experimental results of ZrTiTe$_4$ and HfTiTe$_4$ can be well fitted by the multi-carrier formula assuming two types of carriers, while three carrier components were necessary for HfZrTe$_4$. Interestingly, one of the carrier mobilities of HfZrTe$_4$ exceeded 1000 cm$^2$V$^{-1}$s$^{-1}$, which was nearly one order in magnitude larger than the carrier mobilities of ZrTiTe$_4$ and HfTiTe$_4$. Our band structure calculations showed that all three compounds are semimetals consistent with the magnetotransport properties. The band structure around the $Γ$-point of HfZrTe$_4$ exhibits features that are distinct from the other two compounds, which is likely the reason of the different carrier properties.

cond-mat.mtrl-sci↗

arXiv2021

Nanoscale Texture and Microstructure in NdFeAs(O,F)/IBAD-MgO Superconducting Thin Film with Superior Critical Current Properties

This paper reports the nanoscale texture and microstructure of a high-performance NdFeAs(O,F) superconducting thin film grown by molecular beam epitaxy on a textured MgO/Y$_2$O$_3$/Hastelloy substrate. The NdFeAs(O,F) film forms a highly textured columnar grain structure by epitaxial growth on the MgO template. Although the film contains stacking faults along the $ab$-plane as well as grain boundaries perpendicular to the $ab$-plane, good superconducting properties are measured: a critical temperature, $T _{\rm c}$, of 46 K and a self-field critical current density, $J_{\rm c}$, of $2 \times 10^6 \,{\rm A/cm^2}$ at 4.2 K. Automated crystal orientation mapping by scanning precession electron diffraction in transmission electron microscopy is employed to analyze the misorientation angles between adjacent grains in a large ensemble (247 grains). 99% of the grain boundaries show in-plane misorientation angles ($Δγ$) less than the critical angle $θ_{\rm c}$, which satisfies one of the necessary conditions for the high $J_{\rm c}$. Comparing the columnar grain size distribution with the mean distance of the flux line lattice, the triple junctions of low-angle grain boundaries are found to be effective pinning centers, even at high temperatures ($\ge$35 K) and/or low magnetic fields.

cond-mat.supr-con↗

arXiv2021

High $J_{\rm c}$ and low anisotropy of hydrogen doped NdFeAsO superconducting thin film

The recent realisations of hydrogen doped $Ln$FeAsO ($Ln$=Nd and Sm) superconducting epitaxial thin films call for further investigation of their structural and electrical transport properties. Here, we report on the microstructure of a NdFeAs(O,H) epitaxial thin film and its temperature, field, and orientation dependencies of the resistivity and the critical current density $J_{\rm c}$. The superconducting transition temperature $T_{\rm c}$ is comparable to NdFeAs(O,F). Transmission electron microscopy investigation supported that hydrogen is homogenously substituted for oxygen. A high self-field $J_{\rm c}$ of over 10 MA/cm$^2$ was recorded at 5 K, which is likely to be caused by a short London penetration depth. The anisotropic Ginzburg-Landau scaling for the angle dependence of $J_{\rm c}$ yielded temperature-dependent scaling parameters $γ_{\rm J}$ that decreased from 1.6 at 30 K to 1.3 at 5 K. This is opposite to the behaviour of NdFeAs(O,F). Additionally, $γ_{\rm J}$ of NdFeAs(O,H) is smaller than that of NdFeAs(O,F). Our results indicate that heavily electron doping by means of hydrogen substitution for oxygen in $Ln$FeAsO is highly beneficial for achieving high $J_{\rm c}$ with low anisotropy without compromising $T_{\rm c}$, which is favourable for high-field magnet applications.

cond-mat.supr-con↗

arXiv2020

Anisotropy of the transport properties of NdFeAs(O,F) thin films grown on vicinal substrates

NdFeAs(O,F) thin films having different fluorine contents were grown on 5 deg. or 10 deg. vicinal cut MgO and CaF2 single crystalline substrates by molecular beam epitaxy. Structural characterisations by reflection high-energy electron diffraction and x-ray diffraction confirmed the epitaxial growth of NdFeAs(O,F). The resistivities of the ab-plane and along the c-axis were derived from the resistivity measurements in the longitudinal and transversal directions. The c-axis resistivity was always higher than the ab-plane resistivity, resulting from the anisotropic electronic structure. The resistivity anisotropy at 300 K was almost constant in the range of 50-90 irrespective of the F content. On the other hand, the resistivity anisotropy at 56 K showed a strong fluorine dependence: the resistivity anisotropy was over 200 for the films with optimum F contents (superconducting transition temperature Tc around 50 K), whereas the resistivity anisotropy was around 70 for the films in the under-doped regime (Tc between 35 and 45 K). The mass anisotropy are the effective masses along the c-axis and on the ab-plane) close to Tc derived from the anisotropic Ginzburg-Landau approach using the angular-dependency of the ab-plane resistivity was in the range from 2 to 5. On the assumption that the square of the mass anisotropy is equal to the resistivity anisotropy, those values are small compared to the normal state anisotropy.

cond-mat.supr-con↗

arXiv2019

Ambipolar suppression of superconductivity by ionic gating in optimally-doped BaFe2(As,P)2 ultrathin films

Superconductivity (SC) in the Ba-122 family of iron-based compounds can be controlled by aliovalent or isovalent substitutions, applied external pressure, and strain, the combined effects of which are sometimes studied within the same sample. Most often, the result is limited to a shift of the SC dome to different doping values. In a few cases, the maximum SC transition at optimal doping can also be enhanced. In this work, we study the combination of charge doping together with isovalent P substitution and strain by performing ionic gating experiments on BaFe$_2$(As$_{0.8}$P$_{0.2}$)$_2$ ultrathin films. We show that the polarization of the ionic gate induces modulations to the normal-state transport properties that can be mainly ascribed to surface charge doping. We demonstrate that ionic gating can only shift the system away from the optimal conditions, as the SC transition temperature is suppressed by both electron and hole doping. We also observe a broadening of the resistive transition, which suggests that the SC order parameter is modulated nonhomogeneously across the film thickness, in contrast with earlier reports on charge-doped standard BCS superconductors and cuprates.

cond-mat.supr-con↗

arXiv2019

Grain boundary characteristics of oxypnictide NdFeAs(O,F) superconductors

We have systematically investigated the grain boundary (GB) angle dependence of transport properties for NdFeAs(O,F) fabricated on [001]-tilt symmetric MgO bicrystal substrates. In our previous study, NdFeAs(O,F) bicrystal films showed a weak-link behaviour even at a GB angle of 6°. However, this was caused by an extrinsic effect originating from the damage to both NdFeAs(O,F) and MgO substrate by excess F-diffusion along the grain boundary. To investigate the intrinsic nature of grain boundaries, we minimized the damage to NdFeAs(O,F) and MgO by reducing the deposition temperature of NdOF over-layer needed for F-doping. The resultant NdFeAs(O,F) bicrystal films have a critical angle of 8.5°, above which Jc starts to decrease exponentially. This critical angle is almost the same as those of other Fe-based superconductors.

cond-mat.supr-con↗

arXiv2019

Novel method to study strain effect of thin films using a piezoelectric-based device and a flexible metallic substrate

For applying tensile or compressive uniaxial strain to functional thin films, we propose a novel approach in combining a piezoelectric-based device and a technical metallic substrate used widely in the 2nd generation coated conductors (i.e. superconducting tapes). A strain-induced shift of the superconducting transition temperature of 0.1 K for Co-doped BaFe2As2 was observed along [100] direction, corresponding to a uniaxial pressure derivative dTc/dp100=-4 K/GPa. For Mn3CuN, a uniaxial strain derivative along [100] direction of the Curie temperature dTC/de100=13 K/% was observed. The current approach is applicable to various functional thin films in a wide range of temperatures.

cond-mat.supr-con↗

arXiv2018

Fabrication of grain boundary junctions using NdFeAs(O,F) superconducting thin films

We report on the growth of NdFeAs(O,F) thin films on [001]-tilt MgO bicrystal substrates with misorientation angle theta_GB=6°, 12°, 24° and 45°, and their inter- and intra-grain transport properties. X-ray diffraction study confirmed that all our NdFeAs(O,F) films are epitaxially grown on the MgO bicrystals. The theta_GB dependence of the inter-grain critical current density Jc shows that, unlike Co-doped BaFe2As2 and Fe(Se,Te), its decay with theta_GB is rather significant. As a possible reason of this result, fluorine may have diffused preferentially to the grain boundary region and eroded the crystal structure.

cond-mat.supr-con↗

arXiv2014

Highly textured oxypnictide superconducting thin films on metal substrates

Highly textured NdFeAs(O,F) thin films have been grown on ion beam assisted deposition (IBAD)-MgO/Y2O3/Hastelloy substrates by molecular beam epitaxy. The oxypnictide coated conductors showed a superconducting transition temperature (Tc) of 43 K with a self-field critical current density (Jc) of 7.0 x 104 A/cm2 at 5 K, more than 20 times higher than powder-in-tube processed SmFeAs(O,F) wires. Albeit higher Tc as well as better crystalline quality than Co-doped BaFe2As2 coated conductors, in-field Jc of NdFeAs(O,F) was lower than that of Co-doped BaFe2As2. These results suggest that grain boundaries in oxypnictides reduce Jc significantly compared to that in Co-doped BaFe2As2 and, hence biaxial texture is necessary for high Jc.

cond-mat.supr-con↗

arXiv2012

STM imaging of symmetry-breaking structural distortion in the Bi-based cuprate superconductors

A complicating factor in unraveling the theory of high-temperature (high-Tc) superconductivity is the presence of a "pseudogap" in the density of states, whose origin has been debated since its discovery [1]. Some believe the pseudogap is a broken symmetry state distinct from superconductivity [2-4], while others believe it arises from short-range correlations without symmetry breaking [5,6]. A number of broken symmetries have been imaged and identified with the pseudogap state [7,8], but it remains crucial to disentangle any electronic symmetry breaking from pre-existing structural symmetry of the crystal. We use scanning tunneling microscopy (STM) to observe an orthorhombic structural distortion across the cuprate superconducting Bi2Sr2Can-1CunO2n+4+x (BSCCO) family tree, which breaks two-dimensional inversion symmetry in the surface BiO layer. Although this inversion symmetry breaking structure can impact electronic measurements, we show from its insensitivity to temperature, magnetic field, and doping, that it cannot be the long-sought pseudogap state. To detect this picometer-scale variation in lattice structure, we have implemented a new algorithm which will serve as a powerful tool in the search for broken symmetry electronic states in cuprates, as well as in other materials.

cond-mat.supr-con↗

arXiv2012

Spin-Density-Wave Gap with Dirac Nodes and Two-Magnon Raman Scattering in BaFe2As2

Raman selection rules for electronic and magnetic excitations in BaFe2As2 were theoretically investigated and applied them to the separate detection of the nodal and anti-nodal gap excitations at the spin density wave (SDW) transition and the separate detection of the nearest and the next nearest neighbor exchange interaction energies. The SDW gap has Dirac nodes, because many orbitals participate in the electronic states near the Fermi energy. Using a two-orbital band model the electronic excitations near the Dirac node and the anti-node are found to have different symmetries. Applying the symmetry difference to Raman scattering the nodal and anti-nodal electronic excitations are separately obtained. The low-energy spectra from the anti-nodal region have critical fluctuation just above TSDW and change into the gap structure by the first order transition at TSDW, while those from the nodal region gradually change into the SDW state. The selection rule for two-magnon scattering from the stripe spin structure was obtained. Applying it to the two-magnon Raman spectra it is found that the magnetic exchange interaction energies are not presented by the short-range superexchange model, but the second derivative of the total energy of the stripe spin structure with respect to the moment directions. The selection rule and the peak energy are expressed by the two-magnon scattering process in an insulator, but the large spectral weight above twice the maximum spin wave energy is difficult to explain by the decayed spin wave. It may be explained by the electronic scattering of itinerant carriers with the magnetic self-energy in the localized spin picture or the particle-hole excitation model in the itinerant spin picture. The magnetic scattering spectra are compared to the insulating and metallic cuprate superconductors whose spins are believed to be localized.

cond-mat.supr-con↗

arXiv2010

Systematic Comparison of Eight Substrates in the Growth of FeSe$_{0.5}$Te$_{0.5}$ Superconducting Thin Films

We have investigated the crystal structures and superconducting properties of thin films of FeSe$_{0.5}$Te$_{0.5}$ grown on eight different substrates. Superconductivity is not correlated with the lattice mismatch; rather it is correlated with the degree of in-plane orientation and with the lattice parameter ratio $c/a$. The best superconducting properties were observed in films on MgO and LaAlO$_3$ ($T_\mathrm{c}^\mathrm{zero}$ of 9.5 K). TEM observation showed that the presence or absence of an amorphous-like layer at the substrate surface plays a key role in determining the structural and superconducting properties of the grown films.

cond-mat.supr-con↗