SearcharxivSearch

arXiv subjects

Hiroshi Imamura

Publications and source records attributed to Hiroshi Imamura.

At least 19 recordsLinked to original sources

Sensitivity enhancement of an anomalous Hall effect magnetic sensor by means of second-order magnetic anisotropy

The sensing performance of anomalous Hall effect (AHE) magnetic sensors is investigated in terms of their sensitivity, the power spectrum of their voltage noise, and their detectivity. Special attention is paid to the effect of the second-order anisotropy constant, K2, on the sensing performance. It is found that the sensitivity is strongly enhanced by tuning the value of K2 close to the boundary between the in-plane magnetized state and the conically magnetized state. It is also found that the detectivity is almost independent of K2 as long as the film is in-plane magnetized. These results provide fundamental insights into the design of high-performance AHE sensors.

cond-mat.mes-hall

1/f noise of a tiny tunnel magnetoresistance sensor originated from a wide distribution of bath correlation time

Tunnel magnetoresistance (TMR) sensor is a highly sensitive magnetic field sensor and is expected to be applied in various fields, such as magnetic recording, industrial sensing, and bio-medical sensing. To improve the detection capability of TMR sensors in low frequency regime it is necessary to suppress the 1/f noise. We theoretically study 1/f noise of a tiny TMR sensor using the macrospin model. Starting from the generalized Langevin equation, 1/f noise power spectrum and the Hooge parameter are derived. The calculated Hooge parameter of a tiny TMR sensor is much smaller than that of a conventional TMR sensor with large junction area. The results provide a new perspective on magnetic 1/f noise and will be useful for improvement of TMR sensors.

cond-mat.mes-hall

Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field

Voltage-controlled magnetoresistive random access memory (VC-MRAM) based on voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a promising ultimate non-volatile memory with ultralow power consumption. However, the dynamic switching in a conventional MTJ is accompanied by a relatively high write error rate (WER), hindering the reliable operation of VC-MRAM. Here, we propose a reliable writing scheme using the in-plane demagnetizing field (IDF) and voltage-induced negative out-of-plane anisotropy field (NOAF). Numerical simulations based on macrospin model demonstrate that the voltage-induced NOAF modifies the switching dynamics and increases the torque due to the IDF, thereby reducing the switching time. The IDF and voltage-induced NOAF also reduce the mean energy difference between the magnetization direction at the end of the pulse and the equilibrium direction. As a result, an appropriate combination of the IDF and voltage-induced NOAF reduces the WER by one order of magnitude compared with that of the dynamic switching in a conventional MTJ.

cond-mat.mes-hall

Material Parameters for Faster Ballistic Switching of an In-plane Magnetized Nanomagnet

High-speed magnetization switching of a nanomagnet is necessary for faster information processing. The ballistic switching by a pulsed magnetic filed is a promising candidate for the high-speed switching. It is known that the switching speed of the ballistic switching can be increased by increasing the magnitude of the pulsed magnetic field. However it is difficult to generate a strong and short magnetic field pulse in a small device. Here we explore another direction to achieve the high-speed ballistic switching by designing material parameters such as anisotropy constant, saturation magnetization, and the Gilbert damping constant. We perform the macrospin simulations for the ballistic switching of in-plane magnetized nano magnets with varying material parameters. The results are analyzed based on the switching dynamics on the energy density contour. We show that the pulse width required for the ballistic switching can be reduced by increasing the magnetic anisotropy constant or by decreasing the saturation magnetization. We also show that there exists an optimal value of the Gilbert damping constant that minimizes the pulse width required for the ballistic switching.

cond-mat.mes-hall

Characteristic time of transition from write error to retention error in voltage-controlled magnetoresistive random-access memory

Voltage controlled magnetoresistive random access memory (VC MRAM) is a promising candidate for a future low-power high-density memory. The main causes of bit errors in VC MRAM are write error and retention error. As the size of the memory cell decreases, the data retention time decreases, which causes a transition from the write-error-dominant region to the retention-error-dominant region at a certain operating time. Here we introduce the characteristic time of the transition from the write-error-dominant region to the retention-error-dominant region and analyze how the characteristic time depends on the effective anisotropy constant, $K_{0}$. The characteristic time is approximately expressed as $t_{\rm c} = 2\, w\, τ$, where $w$ is the write error rate, and $τ$ is the relaxation time derived by Kalmkov [J. Appl. Phys. 96, (2004) 1138-1145]. We show that for large $K_{0}$, $t_{\rm c}$ increases with increase of $K_{0}$ similar to $τ$. The characteristic time is a key parameter for designing the VC MRAM for the variety of applications such as machine learning and artificial intelligence.

cond-mat.mes-hall

First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface

Perpendicular magnetic anisotropy (PMA) is a key property of magnetoresistive random access memory (MRAM). To increase areal density of MRAM it is important to find a way to enhance the PMA. Recently a strong enhancement of the PMA by inserting an ultrathin LiF layer at an Fe/MgO interface was reported [T. Nozaki et al., NPG Asia Materials (2022) 14: 5]. To understand the origin of the observed enhancement of the PMA we perform first-principles calculations of magetocrystalline anisotropy energy (MAE) of the following four kind of multilayer structures: Fe/MgO, Fe/LiF/MgO, Fe/FeO/MgO, and Fe/FeF/LiF/MgO. We find that the MAEs of the Fe/LiF/MgO and the Fe/FeF/LiF/MgO structures are almost the same as that of the Fe/MgO structure, while the MAE of the Fe/FeO/MgO structure is less than a half of that of the Fe/MgO structure. The results show that the major origin of the enhancement of the PMA obtained by inserting an ultrathin LiF layer at an Fe/MgO interface is the suppression of the mixing of Fe and O atoms at the interface. We also find that the in-plane Fe-F coupling gives a positive contribution to the MAE while the in-plane Fe-O coupling gives a negative contribution. The results are useful for designing of high-PMA materials.

cond-mat.mtrl-sci

Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction

Voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a writing technique for voltage-controlled magnetoresistive random access memory (VCMRAM), which is expected to be an ultimate non-volatile memory with ultra-low power consumption. In conventional dynamic switching, the width of sub-nanosecond write voltage pulses must be precisely controlled to achieve a sufficiently low write-error rate (WER). This very narrow tolerance of pulse width is the biggest technical difficulty in developing VCMRAM. Heavily damped precessional switching is a writing scheme for VCMRAM with a substantially high tolerance of pulse width although the minimum WER has been much higher than that of conventional dynamic switching with an optimum pulse width. In this study, we theoretically investigate the effect of MTJ shape and the direction of the applied magnetic field on the WER of heavily damped precessional switching. The results show that the WER in elliptical-cylinder MTJ can be several orders of magnitude smaller than that in usual circular-cylinder MTJ when the external magnetic field is applied parallel to the minor axis of the ellipse. The reduction in WER is due to the fact that the demagnetization field narrows the component of the magnetization distribution perpendicular to the plane direction immediately before the voltage is applied.

cond-mat.mes-hall

Distribution of write error rate of spin-transfer-torque magnetoreistive random access memory caused by a distribution of junction parameters

Distribution of write error rate (WER) of spin-transfer-torque magnetoreistive random access memory (STT MRAM) caused by a distribution of resistance area product and anisotropy constant is theoretically studied. Assuming that WER is much smaller than unity, and junction parameters obey a normal distribution, we show that the WER obeys a logarithmic normal distribution. We derive analytical expressions for the probability density function and statistical measures. We find that the coefficient of variation of WER can be reduced by decreasing the pulse width. We also perform numerical simulations based on the Fokker-Planck equation and confirm the validity of the analytical expressions. The results are useful for designing reliable STT MRAMs.

cond-mat.mes-hall

Precession dynamics of a small magnet with non-Markovian damping: Theoretical proposal for an experiment to determine the correlation time

Recent advances in experimental techniques have made it possible to manipulate and measure the magnetization dynamics on the femtosecond time scale which is the same order as the correlation time of the bath degrees of freedom. In the equations of motion of magnetization, the correlation of the bath is represented by the non-Markovian damping. For development of the science and technologies based on the ultrafast magnetization dynamics it is important to understand how the magnetization dynamics depend on the correlation time. It is also important to determine the correlation time experimentally. Here we study the precession dynamics of a small magnet with the non-Markovian damping. Extending the theoretical analysis of Miyazaki and Seki [J. Chem. Phys. 108, 7052 (1998)] we obtain analytical expressions of the precession angular velocity and the effective damping constant for any values of the correlation time under assumption of small Gilbert damping constant. We also propose a possible experiment for determination of the correlation time.

cond-mat.mes-hall

High-Resolution Observations of Bright Boulders on Asteroid Ryugu: 1. Size Frequency Distribution and Morphology

The near-Earth asteroid (162173) Ryugu displays a Cb-type average spectrum and a very low average normal albedo of 0.04. Although the majority of boulders on Ryugu have reflectance spectra and albedo similar to the Ryugu average, a small fraction of boulders exhibit anomalously high albedo and distinctively different spectra. A previous study (Tatsumi et al., 2021) based on the 2.7-km observations and a series of low-altitude (down to 68 m) descent observations conducted prior to the first touchdown have shown that the spectra of these anomalous boulders can be classified into two distinct groups corresponding to S and C type asteroids. The former originate most likely from an impactor that collided with Ryugu's parent body, whereas the latter may be from portions of Ryugu's parent body that experienced a different temperature history than experienced by the majority of boulder materials. In this study, we analyzed images captured after the first touchdown to determine the quantitative properties of these bright boulders on Ryugu. We measured the sizes of more than a thousand bright boulders and characterized the morphologic properties of the largest ones. Analyses revealed many properties of bright boulders important for the evolution of Ryugu and its parent body. The size-frequency distributions of S- and C-type bright boulders follow power laws. We obtained the ratios of the total volume and surface area of S-type bright boulders to those of average dark boulders on the Ryugu surface. Also, many of the bright boulders are embedded in a larger substrate boulder, suggesting that they have experienced mixing and conglomeration with darker fragments on the parent body, rather than gently landing on Ryugu during or after its formation by reaccumulation. This is consistent with the hypothesis that S-type bright boulders were likely mixed during and/or before a catastrophic disruption.

astro-ph.EP

High-Resolution Observations of Bright Boulders on Asteroid Ryugu: 2. Spectral Properties

Many small boulders with reflectance values higher than 1.5 times the average reflectance have been found on the near-Earth asteroid 162173 Ryugu. Based on their visible wavelength spectral differences, Tatsumi et al. (2021) defined two bright boulder classes: C-type and S-type. These two classifications of bright boulders have different size distributions and spectral trends. In this study, we measured the spectra of 79 bright boulders and investigated their detailed spectral properties. Analyses obtained a number of important results. First, S-type bright boulders on Ryugu have spectra that are similar to those found for two different ordinary chondrites with different initial spectra that have been experimentally space weathered the same way. This suggests that there may be two populations of S-type bright boulders on Ryugu, perhaps originating from two different impactors that hit its parent body. Second, the model space-weathering ages of meter-size S-type bright boulders, based on spectral change rates derived in previous experimentally irradiated ordinary chondrites, are 0.1-1 Myr, which is consistent with the crater retention age (<Myr) of the ~1-m deep surface layer on Ryugu. This agreement strongly suggests that the Ryugu surface is extremely young, implying that the samples acquired from the Ryugu surface should be fresh. Third, the lack of a serpentine absorption in the S-type clast embedded in one of the large brecciated boulders indicates that fragmentation and cementation that created the breccias occurred after the termination of aqueous alteration. Fourth, C-type bright boulders exhibit a continuous spectral trend similar to the heating track of low-albedo carbonaceous chondrites, such as CM and CI. Other processes, such as space weathering and grain size effects, cannot primarily account for their spectral variation.

astro-ph.EP

Quadratic magnetoelectric effect during field cooling in sputter grown Cr$_2$O$_3$ films

Cr$_2$O$_3$ is the archetypal magnetoelectric (ME) material, which has a linear coupling between electric and magnetic polarizations. Quadratic ME effects are forbidden for the magnetic point group of Cr$_2$O$_3$, due to space-time inversion symmetry. In Cr$_2$O$_3$ films grown by sputtering, we find a signature of a quadratic ME effect that is not found in bulk single crystals. We use Raman spectroscopy and magetization measurements to deduce the removal of space-time symmetry, and corroborate the emergence of the quadratic ME effect. We propose that meta-stable site-selective trace dopants remove the space, time, and space-time inversion symmetries from the original magnetic point group of bulk Cr$_2$O$_3$. We include the quadratic ME effect in a model describing the switching process during ME field cooling, and estimate the effective quadratic susceptibility value. The quadratic magnetoelectric effect in a uniaxial antiferromagnet is promising for multifunctional antiferromagnetic and magnetoelectric devices that can incorporate optical, strain-induced, and multiferroic effects.

cond-mat.mtrl-sci

Large angle precession of magnetization maintained by a microwave voltage

Effects of a microwave voltage on magnetization precession are analyzed based on a macrospin model. The microwave voltage induces the oscillating anisotropy field through the voltage controlled magnetic anisotropy (VCMA) effect, and then stimulates the magnetization. The large angle precession is maintained if the magnetization synchronizes with the microwave voltage. The effective equations of motion of the magnetization with an oscillating anisotropy field are derived, and the mechanism of the synchronization is clarified by analyzing the derived equations of motion. The conditions of the angular frequency detuning and the amplitude of the oscillating anisotropy field for synchronization are obtained. The results are useful for development of the VCMA-based energy-efficient spintronics devices using magnetization precession such as a VCMA-based magnetoresistive random access memory and a nano-scale microwave magnetic field generator.

cond-mat.mes-hall

Estimation of Rectifying Performance for Terahertz Wave in Newly Designed Fe/ZnO/MgO/Fe Magnetic Tunnel Junction

We fabricated fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs) with low junction resistance-area products (several $Ω$ $μ$m$^2$) and conducted a theoretical estimation of square-low rectifying performance for a terahertz electromagnetic wave. Effective current responsivity up to 0.09 A/W at 1 THz was obtained under zero-bias voltage condition at room temperature. The result is approximately half the value of the best result obtained for experiments in semiconductor-based diodes, performed under similar conditions. The study strongly suggests that this MTJ system has a great potential for the rectifying element of the terahertz wave.

physics.app-ph

Low power switching of magnetization using enhanced magnetic anisotropy with short-voltage-pulse application

A low power magnetization switching scheme based on the voltage control of magnetic anisotropy (VCMA) is proposed. In contrast to the conventional switching scheme using VCMA, where the magnetic anisotropy is eliminated during the voltage pulse, the magnetic anisotropy is enhanced to induce precession around the axis close to the easy axis. After turning off the voltage proximately at a half of precession period, the magnetization relaxes to the opposite equilibrium direction. We perform numerical simulations and show that the pulse duration of the proposed switching scheme is as short as a few tens of pico seconds. Such a short pulse duration is beneficial for low power consumption because of the reduction of energy loss by Joule heating.

cond-mat.mtrl-sci

Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO

We fabricate fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs) with a bilayer tunnel barrier, in which ZnO has a metastable rock-salt crystal structure. We observe a high magnetoresistance ratio up to 96% at room temperature (RT) and find that these MTJs have asymmetric current-voltage characteristics, and their rectifying performances are largely dependent on the magnetization alignments of the Fe electrodes. Diode responsibilities at a zero-bias voltage ($β_{0}$), which is an important performance index for harvesting applications, are observed up to 1.3 A/W at RT in the antiparallel alignment of the magnetizations while maintaining rather low resistance-area (RA) products (a few tens of k${Ωμ}$m$^2$). Even with the same top and bottom electrodes (Fe), the obtained $β_{0}$ values are comparable to those of reported high-performance tunnel diodes consisting of amorphous bilayer tunnel barriers with polycrystalline dissimilar electrodes. This strongly suggests that the epitaxial ZnO/MgO bilayer tunnel barrier is effective for enhancing the $β_{0}$ without significant increase in the RA. In addition, we demonstrate that a zero-bias anomaly in thetunnel conductance, which originates from the magnon excitations at the Fe/barrier interfaces, plays a crucial role in observed spin-dependent diode performance. The results indicate that a fully epitaxial MTJ with a bilayer tunnel barrier is a promising candidate to establish a high-performance high-frequency rectifying system.

cond-mat.mtrl-sci

Deterministic magnetization switching by voltage-control of magnetic anisotropy and Dzyaloshinskii-Moriya interaction under in-plane magnetic field

Based on the micromagnetic simulations the magnetization switching in a triangle magnetic element by voltage-control of magnetic anisotropy and Dzyaloshinskii-Moriya interaction under in-plane magnetic field is proposed. The proposed switching scheme is not the toggle switching but the deterministic switching where the magnetic state is determined by the polarity of the applied voltage pulse. The mechanism and conditions for the switching are clarified. The results provide a fast and low-power writing method for magnetoresistive random access memories.

cond-mat.mes-hall

Impact of spin transfer torque on the write error rate of a voltage-torque-based magnetoresistive random access memory

Impact of spin transfer torque (STT) on the write error rate of a voltage-torque-based magnetoresistive random access memory is theoretically analyzed by using the macrospin model. During the voltage pulse the STT assists or suppresses the precessional motion of the magnetization depending on the initial magnetization direction. The characteristic value of the current density is derived by balancing the STT and the external-field torque, which is about 5$\times$ 10$^{11}$ A/m$^{2}$. The results show that the write error rate is insensitive to the STT below the current density of $10^{10}$ A/m$^{2}$.

cond-mat.mes-hall