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Hiroyuki Yamada

Publications and source records attributed to Hiroyuki Yamada.

6 recordsLinked to original sources

Breaking the Barriers of Database-Agnostic Transactions

Federated transaction management has long been used as a method to virtually integrate multiple databases from a transactional perspective, ensuring consistency across the databases. Modern approaches manage transactions on top of a database abstraction to achieve database agnosticism; however, these approaches face several challenges. First, managing transactions on top of a database abstraction makes performance optimization difficult because the abstraction hides away the details of underlying databases, such as database-specific capabilities. Additionally, it requires that application data and the associated transaction metadata be colocated in the same record to allow for efficient updates, necessitating a schema migration to run federated transactions on top of existing databases. This paper introduces a new concept in such database abstraction called Atomicity Unit (AU) to address these challenges. AU enables federated transaction management to aggressively pushdown database operations by making use of the knowledge about the scope within which they can perform operations atomically, fully harnessing the performance of the databases. Moreover, AU enables efficient separation of transaction metadata from application data, allowing federated transactions to run on existing databases without requiring a schema migration or significant performance degradation. In this paper, we describe AU, how AU addresses the challenges, and its implementation within ScalarDB, an open-sourced database-agnostic federated transaction manager. We also present evaluation results demonstrating that ScalarDB with AU achieves significantly better performance and efficient metadata separation.

cs.DB

Roles of Non-switchable Domains and Internal Bias in Electrocaloric and Pyroelectric effects

Solid-state cooling and energy harvesting via pyroelectric effect (PEE) and electrocaloric effect (ECE) in ferroelectric thin films could be enhanced beyond their intrinsic ferroelectric response by exploiting the recently observed direction-dependent enhancement of the PEE; however, its microscopic origin remains unknown. Herein, we report direct hysteresis measurements of pyrocurrent ($I_{\rm p}$) and ECE-induced temperature change versus bias voltage in 1-$\mu$m-thick Pb(Zr$_{0.65}$Ti$_{0.35}$)O$_3$ capacitors. Both hysteresis loops exhibit pronounced asymmetries along the voltage and response axes. By superimposing direct current voltage offsets, we isolate a residual $I_{\rm p}$-axis shift, revealing a contribution of non-switchable ferroelectric polarization. This non-switchable polarization can be converted into switchable polarization via poling with bipolar triangular pulses, confirming the governing role of defect-induced domain pinning. After 100 pulses, time-dependent aging was observed for pyroelectric and electrocaloric responses, with the switchable contribution markedly decaying and the non-switchable component remaining nearly constant, indicating partial repinning. The change in voltage-axis shift agrees well with the ratio of non-switchable to switchable polarization, demonstrating that voltage shift also arises from pinned domains. These insights clarify the critical role of non-switchable polarization in the PEE and ECE performance, suggesting strategies to optimize the directional response in ferroelectric devices through controlled poling and defect engineering.

cond-mat.mtrl-sci

Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

We demonstrate the feasibility of multilevel recording in Pt/Bi(1-d)FeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi(1-d)FeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi(1-d)FeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory.

cond-mat.mes-hall

A ferroelectric memristor

Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors have recently emerged based on well-established physical phenomena with albeit modest resistance changes. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures.

cond-mat.mtrl-sci

Efficient atomic quantum memory for photonic qubits in cavity QED

We investigate a scheme of atomic quantum memory to store photonic qubits of polarization in cavity QED. It is observed that the quantum-state swapping between a single-photon pulse and a $ Λ$-type atom can be made via scattering in an optical cavity [T. W. Chen, C. K. Law, P. T. Leung, Phys. Rev. A {\bf 69} (2004) 063810]. This swapping operates limitedly in the strong coupling regime for $ Λ$-type atoms with equal dipole couplings. We extend this scheme in cavity QED to present a more feasible and efficient method for quantum memory combined with projective measurement. This method works without requiring such a condition on the dipole couplings. The fidelity is significantly higher than that of the swapping, and even in the moderate coupling regime it reaches almost unity by narrowing sufficiently the photon-pulse spectrum. This high performance is rather unaffected by the atomic loss, cavity leakage or detunings, while a trade-off is paid in the success probability for projective measurement.

quant-ph

Atomic Quantum Memory for Photonic Qubits via Scattering in Cavity QED

We investigate a scheme of atomic quantum memory to store photonic qubits in cavity QED. This is motivated on the recent observation that the quantum-state swapping between a single-photon pulse and a Lambda-type atom trapped in a cavity is ideally realized via scattering for some specific case in the strong coupling cavity regime [T. W. Chen, C. K. Law, and P. T. Leung, Phys. Rev. A 69, 063810 (2004)]. We derive a simple formula for calculating the fidelity of this atom-photon swapping for quantum memory. We further propose a feasible method which implements conditionally the quantum memory operation with the fidelity of almost unity even if the atom-photon coupling is not so strong. This method can also be applied to store a photonic entanglement in spatially separated atomic quantum memories.

quant-ph