arXiv subjects

Hiske Overweg

Publications and source records attributed to Hiske Overweg.

16 recordsLinked to original sources

arXiv2023

Long distance electron-electron scattering detected with point contacts

We measure electron transport through point contacts in an electron gas in AlGaAs/GaAs heterostructures and graphene for a range of temperatures, magnetic fields and electron densities. We find a magnetoconductance peak around B = 0. With increasing temperature, the width of the peak increases monotonically, while its amplitude first increases and then decreases. For GaAs point contacts the peak is particularly sharp at relatively low temperatures $T\approx$1.5 K: the curve rounds on a scale of few tens of $\mu$T hinting at length scales of several millimeters for the corresponding scattering processes. We propose a model based on the transition between different transport regimes with increasing temperature: from ballistic transport to few electron-electron scatterings to hydrodynamic superballistic flow to hydrodynamic Poiseuille-like flow. The model is in qualitative and, in many cases, quantitative agreement with the experimental observations.

cond-mat.mes-hall↗

arXiv2021

CropGym: a Reinforcement Learning Environment for Crop Management

Nitrogen fertilizers have a detrimental effect on the environment, which can be reduced by optimizing fertilizer management strategies. We implement an OpenAI Gym environment where a reinforcement learning agent can learn fertilization management policies using process-based crop growth models and identify policies with reduced environmental impact. In our environment, an agent trained with the Proximal Policy Optimization algorithm is more successful at reducing environmental impacts than the other baseline agents we present.

cs.LG↗

arXiv2020

Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts

In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The valleys in bilayer graphene can be addressed by a perpendicular magnetic field which couples by the valley g-factor. However, control over the valley g-factor has not been demonstrated yet. We experimentally determine the energy spectrum of a quantum point contact realized by a suitable gate geometry in bilayer graphene. Using finite bias spectroscopy we measure the energy scales arising from the lateral confinement as well as the Zeeman splitting and find a spin g-factor of 2. The valley g-factor can be tuned by a factor of 3 using vertical electric fields, reaching values between 40 and 120. The results are quantitatively explained by a calculation considering topological magnetic moment and its dependence on confinement and the vertical displacement field.

cond-mat.mes-hall↗

arXiv2019

Interpretable Outcome Prediction with Sparse Bayesian Neural Networks in Intensive Care

Clinical decision making is challenging because of pathological complexity, as well as large amounts of heterogeneous data generated as part of routine clinical care. In recent years, machine learning tools have been developed to aid this process. Intensive care unit (ICU) admissions represent the most data dense and time-critical patient care episodes. In this context, prediction models may help clinicians determine which patients are most at risk and prioritize care. However, flexible tools such as artificial neural networks (ANNs) suffer from a lack of interpretability limiting their acceptability to clinicians. In this work, we propose a novel interpretable Bayesian neural network architecture which offers both the flexibility of ANNs and interpretability in terms of feature selection. In particular, we employ a sparsity inducing prior distribution in a tied manner to learn which features are important for outcome prediction. We evaluate our approach on the task of mortality prediction using two real-world ICU cohorts. In collaboration with clinicians we found that, in addition to the predicted outcome results, our approach can provide novel insights into the importance of different clinical measurements. This suggests that our model can support medical experts in their decision making process.

cs.LG↗

arXiv2019

The Electronic Thickness of Graphene

The van-der-Waals stacking technique enables the fabrication of heterostructures, where two conducting layers are atomically close. In this case, the finite layer thickness matters for the interlayer electrostatic coupling. Here we investigate the electrostatic coupling of two graphene layers, twisted by 22 degrees such that the layers are decoupled by the huge momentum mismatch between the K and K' points of the two layers. We observe a splitting of the zero-density lines of the two layers with increasing interlayer energy difference. This splitting is given by the ratio of single-layer quantum capacitance over interlayer capacitance C and is therefore suited to extract C. We explain the large observed value of C by considering the finite dielectric thickness d of each graphene layer and determine d=2.6 Angstrom. In a second experiment we map out the entire density range with a Fabry-Pérot resonator. We can precisely measure the Fermi-wavelength in each layer, showing that the layers are decoupled. We find that the Fermi wavelength exceeds 600nm at the lowest densities and can differ by an order of magnitude between the upper and lower layer. These findings are reproduced using tight-binding calculations.

cond-mat.mes-hall↗

arXiv2018

Interactions and magnetotransport through spin-valley coupled Landau levels in monolayer MoS$_{2}$

The strong spin-orbit coupling and the broken inversion symmetry in monolayer transition metal dichalcogenides (TMDs) results in spin-valley coupled band structures. Such a band structure leads to novel applications in the fields of electronics and optoelectronics. Density functional theory calculations as well as optical experiments have focused on spin-valley coupling in the valence band. Here we present magnetotransport experiments on high-quality n-type monolayer molybdenum disulphide (MoS$_{2}$) samples, displaying highly resolved Shubnikov-de Haas oscillations at magnetic fields as low as $2~T$. We find the effective mass $0.7~m_{e}$, about twice as large as theoretically predicted and almost independent of magnetic field and carrier density. We further detect the occupation of the second spin-orbit split band at an energy of about $15~meV$, i.e. about a factor $5$ larger than predicted. In addition, we demonstrate an intricate Landau level spectrum arising from a complex interplay between a density-dependent Zeeman splitting and spin and valley-split Landau levels. These observations, enabled by the high electronic quality of our samples, testify to the importance of interaction effects in the conduction band of monolayer MoS$_{2}$.

cond-mat.mes-hall↗

arXiv2018

Transport through a network of topological states in twisted bilayer graphene

We explore a network of electronic quantum valley Hall (QVH) states in the moiré crystal of minimally twisted bilayer graphene. In our transport measurements we observe Fabry-Pérot and Aharanov-Bohm oscillations which are robust in magnetic fields ranging from 0 to 8T, in strong contrast to more conventional 2D systems where trajectories in the bulk are bent by the Lorentz force. This persistence in magnetic field and the linear spacing in density indicate that charge carriers in the bulk flow in topologically protected, one dimensional channels. With this work we demonstrate coherent electronic transport in a lattice of topologically protected states.

cond-mat.mes-hall↗

arXiv2018

Topologically non-trivial valley states in bilayer graphene quantum point contacts

We present measurements of quantized conductance in electrostatically induced quantum point contacts in bilayer graphene. The application of a perpendicular magnetic field leads to an intricate pattern of lifted and restored degeneracies with increasing field: at zero magnetic field the degeneracy of quantized one-dimensional subbands is four, because of a twofold spin and a twofold valley degeneracy. By switching on the magnetic field, the valley degeneracy is lifted. Due to the Berry curvature states from different valleys split linearly in magnetic field. In the quantum Hall regime fourfold degenerate conductance plateaus reemerge. During the adiabatic transition to the quantum Hall regime, levels from one valley shift by two in quantum number with respect to the other valley, forming an interweaving pattern that can be reproduced by numerical calculations.

cond-mat.mes-hall↗

arXiv2018

Spin and Valley States in Gate-defined Bilayer Graphene Quantum Dots

In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and connected to the leads via p-n junctions. Single electron and hole occupancy is realized and charge carriers $n = 1, 2,\dots 50$ can be filled successively into the quantum system with charging energies exceeding $10 \ \mathrm{meV}$. For the lowest quantum states, we can clearly observe valley and Zeeman splittings with a spin g-factor of $g_{s}\approx 2$. In the low field-limit, the valley splitting depends linearly on the perpendicular magnetic field and is in qualitative agreement with calculations.

cond-mat.mes-hall↗

arXiv2018

Coupled quantum dots in bilayer graphene

Electrostatic confinement of charge carriers in bilayer graphene provides a unique platform for carbon-based spin, charge or exchange qubits. By exploiting the possibility to induce a band gap with electrostatic gating, we form a versatile and widely tunable multi-quantum dot system. We demonstrate the formation of single, double and triple quantum dots that are free of any sign of disorder. In bilayer graphene we have the possibility to form tunnel barriers using different mechanisms. We can exploit the ambipolar nature of bilayer graphene where pn-junctions form natural tunnel barriers. Alternatively, we can use gates to form tunnel barriers, where we can vary the tunnel coupling by more than two orders of magnitude tuning between a deeply Coulomb blockaded system and a Fabry-Pérot-like cavity. Demonstrating such tunability is an important step towards graphene-based quantum computation.

cond-mat.mes-hall↗

arXiv2018

Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure

In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the considerable bandgap and high electron mobility can provide a potential optoelectronic application. Here we present low-temperature transport measurements on a few-layer InSe van der Waals heterostructure with graphene-gated contacts. For high magnetic fields, we observe magnetoresistance minima at even filling factors related to two-fold spin degeneracy. By electrostatic gating with negatively biased split gates, a one-dimensional channel is realized. Close to pinch-off, transport through the constriction is dominated by localized states with charging energies ranging from 2 to 5 meV. This work opens new possibility to explore the low-dimensional physics including quantum point contact and quantum dot.

cond-mat.mes-hall↗

arXiv2018

Gate-Tunable Quantum Dot in a High Quality Single Layer MoS$_{\mathrm{2}}$ Van der Waals Heterostructure

We have fabricated an encapsulated monolayer MoS$_{\mathrm{2}}$ device with metallic ohmic contacts through a pre-patterned hBN layer. In the bulk, we observe an electron mobility as high as 3000 cm$^{\mathrm{2}}$/Vs at a density of 7 $\times$ 10$^{\mathrm{12}}$ cm$^{\mathrm{-2}}$ at a temperature of 1.7 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 3.3 T. By realizing a single quantum dot gate structure on top of the hBN we are able to confine electrons in MoS$_{\mathrm{2}}$ and observe the Coulomb blockade effect. By tuning the middle gate voltage we reach a double dot regime where we observe the standard honeycomb pattern in the charge stability diagram.

cond-mat.mes-hall↗

arXiv2018

Edge channel confinement in a bilayer graphene $n$-$p$-$n$ quantum dot

We combine electrostatic and magnetic confinement to define a quantum dot in bilayer graphene. The employed geometry couples $n$-doped reservoirs to a $p$-doped dot. At magnetic field values around $B = 2~$T, Coulomb blockade is observed. This demonstrates that the coupling of the co-propagating modes at the $p$-$n$ interface is weak enough to form a tunnel barrier, facilitating transport of single charge carriers onto the dot. This result may be of use for quantum Hall interferometry experiments.

cond-mat.mes-hall↗

arXiv2018

Electrostatically induced quantum point contact in bilayer graphene

We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$Ω$. This exceeds previously reported values of $R =~$10 - 100 k$Ω$.\cite{Zou2010,Yan2010,Zhu2016a} We attribute this improvement to the use of a graphite back gate. We realize two split gate devices which define an electronic channel on the scale of the Fermi-wavelength. A channel gate covering the gap between the split gates varies the charge carrier density in the channel. We observe device-dependent conductance quantization of $ΔG = 2~e^2/h$ and $ΔG = 4~e^2/h$. In quantizing magnetic fields normal to the sample plane, we recover the four- fold Landau level degeneracy of bilayer graphene. Unexpected mode crossings appear at the crossover between zero magnetic field and the quantum Hall regime.

cond-mat.mes-hall↗

arXiv2017

Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS$_2$ van der Waals Heterostructures

We have realized encapsulated trilayer MoS$_2$ devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000~cm$^{2}$/(V s) at a density of 3 $\times$ 10$^{12}$~cm$^{-2}$ at a temperature of 1.9~K. Shubnikov--de Haas oscillations start at magnetic fields as low as 0.9~T. The observed 3-fold Landau level degeneracy can be understood based on the valley Zeeman effect. Negatively biased split gate electrodes allow us to form a channel that can be completely pinched off for sufficiently large gate voltages. The measured conductance displays plateau-like features.

cond-mat.mes-hall↗

arXiv2017

Oscillating magnetoresistance in graphene p-n junctions at intermediate magnetic fields

We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p- regions.

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