arXiv subjects

Hitesh Agarwal

Publications and source records attributed to Hitesh Agarwal.

11 recordsLinked to original sources

arXiv2026

Bandwidth-Limited Critical Currents in Electrically Tunable Moiré Bands

Moiré superlattices host narrow minibands whose bandwidth governs correlated and topological phases. Here, we demonstrate that the bandwidth also sets the critical current for the onset of out-of-equilibrium transport. In bilayer graphene aligned to hexagonal boron nitride, we explore the high-current transport regime as we continuously flatten the valence miniband using an out-of-plane displacement field. We observe a significant reduction in the critical current, which is captured by a minimal analytical model and corresponds to the calculated narrowing of the miniband. Moreover, by comparing distinct moiré platforms, we show that the scaling between critical current and bandwidth is a universal feature of graphene superlattices. Our results reveal a direct link between miniband dispersion and high-current transport, and establish this regime as a fast and accessible electrical probe of bandwidth evolution.

cond-mat.mes-hall↗

arXiv2025

Single-photon detection enabled by negative differential conductivity in moiré superlattices

Detecting individual light quanta is essential for quantum information, space exploration, advanced machine vision, and fundamental science. Here, we introduce a novel single photon detection mechanism using highly photosensitive non-equilibrium electron phases in moiré materials. Using tunable bands in bilayer graphene/hexagonal-boron nitride superlattices, we engineer negative differential conductance and a sensitive bistable state capable of detecting single photons. Operating in this regime, we demonstrate single-photon counting at mid-infrared (11.3 microns) and visible wavelengths (675 nanometres) and temperatures up to 25 K. This detector offers new prospects for broadband, high-temperature quantum technologies with CMOS compatibility and seamless integration into photonic integrated circuits (PICs). Our analysis suggests the mechanism underlying our device operation originates from negative differential velocity, and represents an important milestone in the field of high-bias transport in two-dimensional moiré quantum materials.

cond-mat.mes-hall↗

arXiv2025

In situ engineering hexagonal boron nitride in van der Waals heterostructures with selective SF6 etching

Van der Waals heterostructures are at the forefront in materials heterostructure engineering, offering the ultimate control in layer selectivity and capability to combine virtually any material. Hexagonal boron nitride (hBN), the most commonly used dielectric material, has proven indispensable in this field, allowing the encapsulation of active 2D materials preserving their exceptional electronic quality. However, not all device applications require full encapsulation but rather require open surfaces, or even selective patterning of hBN layers. Here, we report on a procedure to engineer top hBN layers within van der Waals heterostructures while preserving the underlying active 2D layers. Using a soft selective SF6 etching combined with a series of pre and post-etching treatments, we demonstrate that pristine surfaces can be exposed with atomic flatness while preserving the active layers electronic quality. We benchmark our technique using graphene encapsulated with hBN Hall bar devices. Using Raman spectroscopy combined with quantum transport, we show high quality can be preserved in etched regions by demonstrating low temperature carrier mobilities of 200,000 cm2Vs-1, ballistic transport probed through magnetic focusing, and intrinsic room temperature phonon-limited mobilities. Atomic force microscopy brooming and O2 plasma cleaning are identified as key pre-etching steps to obtaining pristine open surfaces while preserving electronic quality. The technique provides a clean method for opening windows into mesoscopic van der Waals devices that can be used for local probe experiments, patterning top hBN in situ, and exposing 2D layers to their environment for sensing applications.

cond-mat.mes-hall↗

arXiv2024

Terahertz photocurrent probe of quantum geometry and interactions in magic-angle twisted bilayer graphene

Moiré materials represent strongly interacting electron systems bridging topological and correlated physics. Despite significant advances, decoding wavefunction properties underlying the quantum geometry remains challenging. Here, we utilize polarization-resolved photocurrent measurements to probe magic-angle twisted bilayer graphene, leveraging its sensitivity to the Berry connection that encompasses quantum "textures" of electron wavefunctions. Using terahertz light resonant with optical transitions of its flat bands, we observe bulk photocurrents driven by broken symmetries and reveal the interplay between electron interactions and quantum geometry. We observe inversion-breaking gapped states undetectable through quantum transport, sharp changes in the polarization axes caused by interaction-induced band renormalization, and recurring photocurrent patterns at integer fillings of the moiré unit cell that track the evolution of quantum geometry through the cascade of phase transitions. The large and tunable terahertz response intrinsic to flat-band systems offers direct insights into the quantum geometry of interacting electrons and paves the way for innovative terahertz quantum technologies.

cond-mat.mes-hall↗

arXiv2024

Electrical Spectroscopy of Polaritonic Nanoresonators

One of the most captivating properties of polaritons is their capacity to confine light at the nanoscale. This confinement is even more extreme in two-dimensional (2D) materials. 2D polaritons have been investigated by optical measurements using an external photodetector. However, their effective spectrally resolved electrical detection via far-field excitation remains unexplored. This fact hinders their potential exploitation in crucial applications such as sensing molecules and gases, hyperspectral imaging and optical spectrometry, banking on their potential for integration with silicon technologies. Herein, we present the first electrical spectroscopy of polaritonic nanoresonators based on a high-quality 2D-material heterostructure, which serves at the same time as the photodetector and the polaritonic platform. We employ metallic nanorods to create hybrid nanoresonators within the hybrid plasmon-phonon polaritonic medium in the mid and long-wave infrared ranges. Subsequently, we electrically detect these resonators by near-field coupling to a graphene pn-junction. The nanoresonators simultaneously present a record of lateral confinement and high-quality factors of up to 200, exhibiting prominent peaks in the photocurrent spectrum, particularly at the underexplored lower reststrahlen band of hBN. We exploit the geometrical and gate tunability of these nanoresonators to investigate their impact on the photocurrent spectrum and the polaritonic's waveguided modes. This work opens a venue for studying this highly tunable and complex hybrid system, as well as for using it in compact platforms for sensing and photodetection applications.

physics.optics↗

arXiv2024

Cryogenic nano-imaging of second-order moiré superlattices

Second-order superlattices form when moiré superlattices of similar periodicities interfere with each other, leading to even larger superlattice periodicities. These crystalline structures have been engineered utilizing two-dimensional (2D) materials such as graphene and hexagonal boron nitride (hBN) under specific alignment conditions. Such specific alignment has shown to play a crucial role in facilitating correlation-driven topological phases featuring the quantized anomalous Hall effect. While signatures of second-order superlattices have been identified in magnetotransport experiments, any real-space visualization is lacking to date. In this work, we present \NT{electronic transport measurements and cryogenic nanoscale photovoltage (PV) measurements} that reveal a second-order superlattice in magic-angle twisted bilayer graphene closely aligned to hBN. This is evidenced by long-range periodic photovoltage modulations across the entire sample backed by the corresponding electronic transport features. Supported by theoretical calculations, our experimental data show that even minuscule strain and twist-angle variations on the order of 0.01$^\circ$ can lead to a drastic change of the second-order superlattice structure between local one-dimensional, square or triangular types. Our real-space observations therefore serve as a strong `magnifying glass' for strain and twist angle and can shed new light on the mechanisms responsible for the breaking of spatial symmetries in twisted bilayer graphene, and pave an avenue to engineer long-range superlattice structures in 2D materials using strain fields.

cond-mat.mes-hall↗

arXiv2024

Infrared Spectroscopy for Diagnosing Superlattice Minibands in Magic-angle Twisted Bilayer Graphene

Twisted bilayer graphene (TBG) represents a highly tunable, strongly correlated electron system owed to its unique flat electronic bands. However, understanding the single-particle band structure alone has been challenging due to complex lattice reconstruction effects and a lack of spectroscopic measurements over a broad energy range. Here, we probe the band structure of TBG around the magic angle using infrared spectroscopy. Our measurements reveal spectral features originating from interband transitions whose energies are uniquely defined by the twist angle. By combining with quantum transport, we connect spectral features over a broad energy range (10 to 700 meV) spanning several superlattice minibands and track their evolution with twist angle. We compare our data with calculations of the band structures obtained via the continuum model and find good agreement only when considering a variation of interlayer/intralayer tunnelling parameters with the twist angle. Our analysis suggests that the magic angle also shifts due to lattice relaxation, and is better defined for a wide angular range from 0.9° to 1.1°. Our work provides spectroscopic insights into TBG's band structure and offers an optical fingerprint of the magic angle for screening heterostructures before nanofabrication.

cond-mat.mes-hall↗

arXiv2023

Giant ultra-broadband photoconductivity in twisted graphene heterostructures

The requirements for broadband photodetection are becoming exceedingly demanding in hyperspectral imaging. Whilst intrinsic photoconductor arrays based on mercury cadmium telluride represent the most sensitive and suitable technology, their optical spectrum imposes a narrow spectral range with a sharp absorption edge that cuts their operation to < 25 um. Here, we demonstrate a giant ultra-broadband photoconductivity in twisted double bilayer graphene heterostructures spanning a spectral range of 2 - 100 um with internal quantum efficiencies ~ 40 % at speeds of 100 kHz. The giant response originates from unique properties of twist-decoupled heterostructures including pristine, crystal field induced terahertz band gaps, parallel photoactive channels, and strong photoconductivity enhancements caused by interlayer screening of electronic interactions by respective layers acting as sub-atomic spaced proximity screening gates. Our work demonstrates a rare instance of an intrinsic infrared-terahertz photoconductor that is complementary metal-oxide-semiconductor compatible and array integratable, and introduces twist-decoupled graphene heterostructures as a viable route for engineering gapped graphene photodetectors with 3D scalability.

cond-mat.mes-hall↗

arXiv2023

Ultraconfined plasmons in atomically thin crystalline silver nanostructures

The ability to confine light down to atomic scales is critical for the development of applications in optoelectronics and optical sensing as well as for the exploration of nanoscale quantum phenomena. Plasmons in metallic nanostructures can achieve this type of confinement, although fabrication imperfections down to the subnanometer scale hinder actual developments. Here, we demonstrate narrow plasmons in atomically thin crystalline silver nanostructures fabricated by prepatterning silicon substrates and epitaxially depositing silver films of just a few atomic layers in thickness. Combined with on-demand lateral shaping, this procedure allows for an unprecedented control over optical field confinement in the near-infrared spectral region. Specifically, we observe fundamental and higher-order plasmons featuring extreme spatial confinement and high-quality factors that reflect the crystallinity of the metal. Our approach holds potential for the design and exploitation of atomic-scale nanoplasmonic devices in optoelectronics, sensing, and quantum-physics applications.

cond-mat.mes-hall↗

arXiv2023

Engineering high quality graphene superlattices via ion milled ultra-thin etching masks

Nanofabrication research pursues the miniaturization of patterned feature size. In the current state of the art, micron scale areas can be patterned with features down to ~ 30 nm pitch using electron beam lithography. Our work demonstrates a new nanofabrication technique which allows patterning periodic structures with a pitch down to 16 nm. It is based on focused ion beam milling of suspended membranes, with minimal proximity effects typical to electron beam lithography. The membranes are then transferred and used as hard etching masks. We benchmark our technique by engineering a superlattice potential in single layer graphene using a thin graphite patterned gate electrode. Our electronic transport characterization shows high quality superlattice properties and a rich Hofstadter butterfly spectrum. Our technique opens the path towards the realization of very short period superlattices in 2D materials, comparable to those in natural moire systems, but with the ability to control lattice symmetries and strength. This can pave the way for a versatile solid-state quantum simulator platform and the study of correlated electron phases.

cond-mat.mes-hall↗

arXiv2018

Landau level diagram and the continuous rotational symmetry breaking in trilayer graphene

The sequence of the zeroth Landau levels (LLs) between filling factors $ν$=-6 to 6 in ABA-stacked trilayer graphene (TLG) is unknown because it depends sensitively on the non-uniform charge distribution on the three layers of ABA-stacked TLG. Using the sensitivity of quantum Hall data on the electric field and magnetic field, in an ultraclean ABA-stacked TLG sample, we quantitatively estimate the non-uniformity of the electric field and determine the sequence of the zeroth LLs. We also observe anticrossings between some LLs differing by 3 in LL index, which result from the breaking of the continuous rotational to \textit{C}$_3$ symmetry by the trigonal warping.

cond-mat.mes-hall↗