arXiv subjects

Hong-Guk Min

Publications and source records attributed to Hong-Guk Min.

5 recordsLinked to original sources

arXiv2026

First-principles carrier mobility and optical absorption of strained ZnO with self-consistent Hubbard interactions

Carrier mobility and optical absorption are key performance parameters of oxide semiconductors in transparent and flexible displays. We use a newly developed density-functional perturbation theory with a self-consistent Hubbard correction (DFPT+U) to study phonon-limited electron transport and phonon-assisted optical absorption in strained zinc oxide (ZnO). This parameter-free approach accounts for electron-phonon interactions and on-site correlation effects simultaneously. Electronic structures and phonon dispersions are computed under three distinct uniaxial strain directions. Uniaxial tensile strain up to 4.8% along [\bar110] is found to increase the room-temperature electron mobility by 19% while leaving visible-range optical absorption essentially unchanged. These results demonstrate that moderate strain can selectively enhance carrier transport without degrading optical transparency, and establish DFPT+U as an effective framework for predicting strain-dependent transport and optical properties in wide-band-gap oxides with implications for strain-engineered display and optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2026

Hot carrier diffusion-assisted ideal carrier multiplication in monolayer MoSe2

Carrier multiplication (CM), the process of generating multiple charge carriers from a single photon, offers an opportunity to exceed the Shockley-Queisser limit in photovoltaic applications. Despite extensive research, no material has yet achieved ideal CM efficiency, primarily owing to significant energy losses from carrier-lattice scattering. In this study, we demonstrate that monolayer MoSe2 can attain the theoretical maximum CM efficiency permitted by energy-momentum conservation principle, using ultrafast transient absorption spectroscopy. By resolving the scatter-free ballistic transport of hot carriers and validating our findings with first-principles calculations, we identify the cornerstone of optimal CM in monolayer MoSe2: superior hot-carrier dynamics characterized by suppressed energy dissipation via minimized carrier-lattice scattering, and the availability of abundant CM pathways facilitated by 2Eg band nesting. Comparative analysis with bulk MoSe2 further emphasizes the enhanced CM efficiency in the monolayer, attributed by superior hot-carrier diffusion and access to additional CM pathways. These results position monolayer MoSe2 as a promising candidate for high-performance optoelectronic applications, providing a robust platform for next-generation energy conversion technologies.

cond-mat.mes-hall↗

arXiv2025

Stacking-dependent topological electronic structures in honeycomb-kagome heterolayers

Heterostructures of stacked two-dimensional lattices have shown great promise for engineering novel material properties. As an archetypal example of such a system, the hexagon-shared honeycomb-kagome lattice has been experimentally synthesized in various material platforms. In this work, we explore three rotationally symmetric variants of the honeycomb-kagome lattice: the hexagonal, triagonal, and biaxial phases. While the triagonal and biaxial phases exhibit trivial insulating and Dirac semimetal band structures, respectively, the hexagonal phase hosts a higher-order topological phase driven by band inversion near the $\Gamma$-point. This highlights a key distinction from the conventional band inversions at the $K$-point observed in hexagonal homobilayer systems. Furthermore, we demonstrate how the distinct topological properties of these phases result in network band structures within moir\'e heterostructures formed by twisted or lattice-mismatched HK systems. These network band structures can be experimentally observed through extrinsic twisting or intrinsic lattice mismatching between the honeycomb and kagome systems.

cond-mat.mtrl-sci↗

arXiv2022

Tunable bulk photovoltaic effect in strained $γ$-GeSe

Recently, Lee \textit{et. al.} [Nano Lett. \textbf{21}, 4305 (2021)] newly synthesized monochalcogenide GeSe in a polar phase, referred to as $γ$-phase. Motivated by this work, we study shift current of $γ$-GeSe and its tunability via an in-plane uniaxial strain. Using first-principles calculations, we uncover the electronic structure of the strained $γ$-GeSe systems. We then calculate frequency-dependent shift current conductivities at various strains. The tunability is demonstrated to enhance the shift current up to $\sim$ 20 $μ$A/V$^2$. Moreover, the direction of shift current can be inverted by a light strain. Markedly, an anomalous behavior is found in the zero-frequency limit, which can be an indicative of band inversion and a potential topological phase transition driven by the strain. Our results suggest that shift current can be a tangible prove of bulk electronic states of $γ$-GeSe.

cond-mat.mtrl-sci↗

arXiv2019

Dual topological nodal line and nonsymmorphic Dirac semimetal in three dimensions

Previously known three-dimensional Dirac semimetals (DSs) occur in two types -- topological DSs and nonsymmorphic DSs. Here we present a novel three-dimensional DS that exhibits both features of the topological and nonsymmorphic DSs. We introduce a minimal tight-binding model for the space group 100 that describes a layered crystal made of two-dimensional planes in the $p4g$ wallpaper group. Using this model, we demonstrate that double glide-mirrors allow a noncentrosymmetric three-dimensional DS that hosts both symmetry-enforced Dirac points at time-reversal invariant momenta and twofold-degenerate Weyl nodal lines on a glide-mirror-invariant plane in momentum space. The proposed DS allows for rich topological physics manifested in both topological surface states and topological phase diagrams, which we discuss in detail. We also perform first-principles calculations to predict that the proposed DS is realized in a set of existing materials BaLa$X$B$Y_5$, where $X$ = Cu or Au, and $Y$ = O, S, or Se.

cond-mat.mes-hall↗