arXiv subjects

Hong-Wen Jiang

Publications and source records attributed to Hong-Wen Jiang.

26 records · Page 2Linked to original sources

arXiv2014

Coupling two distant double quantum dots to a microwave resonator

With recent advances in the circuit quantum electrodynamics (cQED) architecture, hybrid systems that couple nano-devices to microwave resonators have been developing rapidly. Here we report an experimental demonstration of two graphene double quantum dots (DQDs) coupled over a distance of up to 60 μm, through a microwave resonator. We jointly measure the two DQDs' coupling to the resonator, which causes a nonlinear response in the resonator reflection amplitude in the vicinity of the degeneracy points of the two DQDs. This phenomenon is explained by the Tavis-Cummings (T-C) mode. We further characterize this nonlocal coupling by measuring the correlation between the DC currents in the two DQDs. This correlation is observed to be strongly dependent on the average photon number in the resonator. Our results explore T-C physics in electronic transport, and also contribute to the study of nonlocal transport and future implementations of remote electronic entanglement.

cond-mat.mes-hall↗

arXiv2014

Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device

We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double quantum dot can be tuned to a few-electron region. Additionally, the inter-dot coupling of the double quantum dot can be tuned to a large extent according to the voltage on the middle gate. The quantum dot is shown to be tunable from a single dot to a well-isolated double dot. To assess the stability of such design, the potential fluctuation induced by 1/f noise was measured. Based on the findings herein, the quantum dot design developed in the undoped GaAs/AlGaAs semiconductor shows potential for the future exploitation of nano-devices.

cond-mat.mes-hall↗

arXiv2013

Symmetric reflection line resonator for semiconductor circuit quantum electrodynamics

We have designed and fabricated a half-wavelength reflection line resonator (RLR) that consists of a pair of two coupled microstrip lines on a GaAs/AlGaAs heterostructure. By changing the top gate voltage on a square of two dimensional electron gas under the resonator, a large range of the quality factors can be obtained. Energy loss in the two-dimensional electron gas can be minimized, thus realizing a versatile resonator suitable for integration with semiconductor quantum circuits.

cond-mat.mes-hall↗

arXiv2013

Photon-assisted-tunneling in a coupled double quantum dot out of thermal equilibrium

We perform photon-assisted-tunneling (PAT) experiments on a GaAs double quantum dot device under high microwave excitation power. Photon-assisted absorption of up to 14 photons is observed, when electron temperature (>1K) are far above the lattice temperature. Signatures of Landau-Zener-Stückelberg (LZS) interference are found even in this non-equilibrium PAT spectrum. In addition, the charge state relaxation time T_1~8ns measured in this out of thermal equilibrium double quantum dot is in agreement with other previous reports.

cond-mat.mes-hall↗

arXiv2013

Tuning inter-dot tunnel coupling of an etched graphene double quantum dot by adjacent metal gates

Graphene double quantum open the possibility to use charge or spin degrees of freedom for storing and manipulating quantum information in this new electronic material. However, impurities and edge disorders in etched graphene nano-structures hinder the ability to control the inter-dot tunnel coupling, tc,the most important property of the artificial molecule. Here we report measurements of tc in an all-metal-gates-tuned graphene DQD. We find that tc can be controlled continuously about a factor of four by employing a single gate. Furthermore, tc, can be changed monotonically about another factor of four as electrons are gate-pumped into the dot one by one. The results suggest that the strength of tunnel coupling in etched DQDs can be varied in a rather broad range and in a controllable manner, which improves the outlook to use graphene as a base material for qubit applications.

cond-mat.mes-hall↗

arXiv2013

Quantum simulation of Kibble-Zurek mechanism with a semiconductor electron charge qubit

The Kibble-Zurek mechanism provides a description of the topological structure occurring in the symmetry breaking phase transitions, which may manifest as the cosmological strings in the early universe or vortex lines in the superfulid. A particularly intriguing analogy between Kibble-Zurek mechanism and a text book quantum phenomenon, Landau-Zener transition has been discovered, but is difficult to observe up to now. In recent years, there has been broad interest in quantum simulations using different well-controlled physical setups, in which full tunability allows access to unexplored parameter regimes. Here we demonstrate a proof-of-principle quantum simulation of Kibble-Zurek mechanism using a single electron charge qubit in double quantum dot, set to behave as Landau-Zener dynamics. We measure the qubit states as a function of driven pulse velocity and successfully reproduce Kibble-Zurek like dependence of topological defect density on the quench rate. The high-level controllability of semiconductor two-level system make it a platform to test the key elements of topological defect formation process and shed a new insight on the aspect of non-equilibrium phase transitions.

quant-ph↗

arXiv2010

A Graphene Quantum Dot with a Single Electron Transistor as Integrated Charge Sensor

We have developed an etching process to fabricate a quantum dot and a nearby single electron transistor as a charge detector in a single layer graphene. The high charge sensitivity of the detector is used to probe Coulomb diamonds as well as excited spectrum in the dot, even in the regime where the current through the quantum dot is too small to be measured by conventional transport means. The graphene based quantum dot and integrated charge sensor serve as an essential building block to form a solid-state qubit in a nuclear-spin-free quantum world.

cond-mat.mes-hall↗

arXiv2004

Single photo-electron trapping, storage, and detection in a one-electron quantum dot

There has been considerable progress in electro-statically emptying, and re-filling, quantum dots with individual electrons. Typically the quantum dot is defined by electrostatic gates on a GaAs/AlGaAs modulation doped heterostructure. We report the filling of such a quantum dot by a single photo-electron, originating from an individual photon. The electrostatic dot can be emptied and reset in a controlled fashion before the arrival of each photon. The trapped photo-electron is detected by a point contact transistor integrated adjacent to the electrostatic potential trap. Each stored photo-electron causes a persistent negative step in the transistor channel current. Such a controllable, benign, single photo-electron detector could allow for information transfer between flying photon qubits and stored electron qubits.

quant-ph↗