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Hongjian Zhao

Publications and source records attributed to Hongjian Zhao.

4 recordsLinked to original sources

Odd-Parity Chiral Magnons in Collinear Antiferromagnetic Multiferroics

Odd-parity magnetism represents an intriguing frontier in unconventional magnets; however, its realization has traditionally relied on noncollinear magnetic orders accompanied by broken spin conservation, which inevitably causes spin relaxation and dissipative transport of spin-encoded information. Here, we uncover a distinct route toward spin-conserving odd-parity magnon splitting enabled by antichiral Haldane-like flux (AHF) in collinear antiferromagnetic multiferroics. Symmetry analysis reveals that such AHF driven by intra-sublattice Dzyaloshinskii-Moriya interactions (DMI) gives rise to symmetry-dependent odd-parity magnon splittings, ranging from $p$-wave and $f$-wave to nodeless forms. Moreover, the coupling between ferroelectric modes and DMI provides an electric-field knob for manipulating chiral band splitting and magnon transport. Combining density functional theory (DFT) calculations, we identify a series of promising candidate materials in both 2D and bulk antiferromagnetic multiferroics. Our work provides new insights into the realization of odd-parity chiral magnons in collinear antiferromagnets and magnetoelectric coupling mechanisms in multiferroics.

cond-mat.mtrl-sci

Unlocking Static Polarization and Strain Density Waves in Perovskites by Softening a Hidden Antiferrodistortive Tilt Gradient Mode

Spin density waves (SDWs) represent a fundamental paradigm of spatially modulated order in condensed matter systems, yet their electrical and mechanical analogues polarization and strain density waves (PDWs and StDWs) have remained elusive as equilibrium phases. Here, we introduce a general, symmetry-driven strategy to unlock static PDWs and StDWs in perovskites SrTiO3 and SrMnO3. Using first-principles calculations, we uncover a previously overlooked soft antiferrodistortive tilt gradient mode at small-q wavevector in the phonon dispersion of their presumed Ima2 ground state under moderate tensile strain. Group-theory analysis reveals that a hard polaracoustic phonon, which intrinsically carries PDWs and StDWs, is improperly destabilized by a trilinear coupling with this modulated tilt mode and an inherently uniform tilt mode. This interaction drives a structural transition from the Ima2 phase to a novel lower-energy Pmn21 phase that hosts long-range-ordered PDWs and StDWs. Strikingly, the engineered StDWs in SrMnO3 activate an electrically tunable SDW via the flexomagnetic effect. These discoveries fundamentally revise the strain-phase diagrams of prototypical perovskites and establish a unified phonon-engineering framework that links modulated phonon instabilities to targeted density-wave order, offering new pathways for designing advanced electromechanical and magnetoelectric functionalities.

cond-mat.mtrl-sci

A new approach for the inversion of residual stress based on acoustoelasticity theory and full waveform inversion

Acoustoelasticity theory has been widely used to evaluate the residual stress (or prestress), almost all the available ultrasonic stress detection methods are based on the relationship between the magnitude of stress and wave speed, but these measurement methods make the assumption that the stress is uniform, only one point or average stress in the direction of ultrasound propagation can be obtained. However, the real stress distribution is usually nonuniform. In order to obtain the stress distribution in the direction of ultrasound propagation, in this paper, we propose a new approach: the inversion of residual stress. In the theory part, the inversion of residual stress is transformed into an optimization problem. The objective function is established, and the gradient of the objective function to the stress is derived using the adjoint method, which has been maturely applied in full waveform inversion. In the numerical simulation part, the welding process is simulated using the finite element method to obtain a database of the residual stress field. Then the residual stress is evaluated by inversion approach and the influence of the number of sources and receivers and the frequency of the excitation wave on the inversion effect is discussed. The results show that the inversion of residual stress is still challenging with a small amount of data, but a more accurate inversion can be obtained by appropriately increasing the number of sources and receivers. This study provides an appropriate method for the evaluation of residual stress distribution and lays the theoretical and simulation foundation for the application of ultrasonic stress testing in it.

physics.app-ph

Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping

In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO2. Simultaneously, defects also pin the domain walls and impede the switching process, ultimately rendering the sluggish switching of HfO2. Herein, we present an effective strategy involving acceptor-donor co-doping to effectively tackle this dilemma. Remarkably enhanced ferroelectricity and the fastest switching process ever reported among HfO2 polar devices are observed in La3+-Ta5+ co-doped HfO2 ultrathin films. Moreover, robust macro-electrical characteristics of co-doped films persist even at a thickness as low as 3 nm, expanding potential applications of HfO2 in ultrathin devices. Our systematic investigations further demonstrate that synergistic effects of uniform microstructure and smaller switching barrier introduced by co-doping ensure the enhanced ferroelectricity and shortened switching time. The co-doping strategy offers an effective avenue to control the defect state and improve the ferroelectric properties of HfO2 films.

cond-mat.mtrl-sci