arXiv subjects

Hongki Min

Publications and source records attributed to Hongki Min.

63 records · Page 4Linked to original sources

arXiv2009

Electron-electron interactions in graphene bilayers

Electrons most often organize into Fermi-liquid states in which electron-electron interactions play an inessential role. A well known exception is the case of one-dimensional (1D) electron systems (1DES). In 1D the electron Fermi-surface consists of points, and divergences associated with low-energy particle-hole excitations abound when electron-electron interactions are described perturbatively. In higher space dimensions, the corresponding divergences occur only when Fermi lines or surfaces satisfy idealized nesting conditions. In this article we discuss electron-electron interactions in 2D graphene bilayer systems which behave in many ways as if they were one-dimensional, because they have Fermi points instead of Fermi lines and because their particle-hole energies have a quadratic dispersion which compensates for the difference between 1D and 2D phase space. We conclude, on the basis of a perturbative RG calculation similar to that commonly employed in 1D systems, that interactions in neutral graphene bilayers can drive the system into a strong-coupling broken symmetry state with layer-pseudospin ferromagnetism and an energy gap.

cond-mat.str-el↗

arXiv2009

Quantum Wells in Polar-Nonpolar Oxide Heterojunction Systems

We address the electronic structure of quantum wells in polar-nonpolar oxide heterojunction systems focusing on the case of non-polar BaVO$_3$ wells surrounded by polar LaTiO$_3$ barriers. Our discussion is based on a density functional description using the local spin density approximation with local correlation corrections (LSDA+U). We conclude that a variety of quite different two-dimensional electron systems can occur at interfaces between insulating materials depending on band line-ups and on the geometrical arrangement of polarity discontinuities.

cond-mat.str-el↗

arXiv2008

Room-Temperature Superfluidity in Graphene Bilayers

Because graphene is an atomically two-dimensional gapless semiconductor with nearly identical conduction and valence bands, graphene-based bilayers are attractive candidates for high-temperature electron-hole pair condensation. We present estimates which suggest that the Kosterlitz-Thouless temperatures of these two-dimensional counterflow superfluids can approach room temperature.

cond-mat.mes-hall↗

arXiv2008

Energy gaps, magnetism, and electric field effects in bilayer graphene nanoribbons

Using a first principles density functional electronic structure method, we study the energy gaps and magnetism in bilayer graphene nanoribbons as a function of the ribbon width and the strength of an external electric field between the layers. We assume AB (Bernal) stacking and consider both armchair and zigzag edges and two edge alignments distinguished by a 60$^o$ rotation of one layer with respect to the other. Armchair ribbons exhibit three classes of bilayer gaps which decrease with increasing ribbon width. An external electric field between the layers increases the gap in narrow ribbons and decreases the gap for wide ribbons, a property which can be understood semi-analytically using a $π$-band tight-binding model and perturbation theory. The magnetic properties of zigzag edge ribbons are different for the two different edge alignments, and not robust for all exchange-correlation approximations considered. Bilayer ribbon gaps are sensitive to the presence or absence of magnetism.

cond-mat.mtrl-sci↗

arXiv2008

Chiral Decomposition in the Electronic Structure of Graphene Multilayers

We show that the low-energy electronic structure of arbitrarily stacked graphene multilayers with nearest-neighbor interlayer tunneling consists of chiral pseudospin doublets. Although the number of doublets in an $N$-layer system depends on the stacking sequence, the pseudospin chirality sum is always $N$. $N$-layer stacks have $N$ distinct Landau levels at E=0 for each spin and valley, and quantized Hall conductivity $σ_{xy} = \pm(4 e^2/h)(N/2+n)$ where $n$ is a non-negative integer.

cond-mat.mes-hall↗

arXiv2008

Pseudospin Magnetism in Graphene

We predict that neutral graphene bilayers are pseudospin magnets in which the charge density-contribution from each valley and spin spontaneously shifts to one of the two layers. The band structure of this system is characterized by a momentum-space vortex which is responsible for unusual competition between band and kinetic energies leading to symmetry breaking in the vortex core. We discuss the possibility of realizing a pseudospin version of ferromagnetic metal spintronics in graphene bilayers based on hysteresis associated with this broken symmetry.

cond-mat.str-el↗

arXiv2007

Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers

We study the gate voltage induced gap that occurs in graphene bilayers using \textit{ab initio} density functional theory. Our calculations confirm the qualitative picture suggested by phenomenological tight-binding and continuum models. We discuss enhanced screening of the external interlayer potential at small gate voltages, which is more pronounced in the \textit{ab initio} calculations, and quantify the role of crystalline inhomogeneity using a tight-binding model self-consistent Hartree calculation.

cond-mat.mtrl-sci↗

arXiv2006

Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets

Starting from a microscopic tight-binding model and using second order perturbation theory, we derive explicit expressions for the intrinsic and Rashba spin-orbit interaction induced gaps in the Dirac-like low-energy band structure of an isolated graphene sheet. The Rashba interaction parameter is first order in the atomic carbon spin-orbit coupling strength $ξ$ and first order in the external electric field $E$ perpendicular to the graphene plane, whereas the intrinsic spin-orbit interaction which survives at E=0 is second order in $ξ$. The spin-orbit terms in the low-energy effective Hamiltonian have the form proposed recently by Kane and Mele. \textit{Ab initio} electronic structure calculations were performed as a partial check on the validity of the tight-binding model.

cond-mat.mes-hall↗

arXiv2006

Charge and spin Hall conductivity in metallic graphene

Graphene has an unusual low-energy band structure with four chiral bands and half-quantized and quantized Hall effects that have recently attracted theoretical and experimental attention. We study the Fermi energy and disorder dependence of its spin Hall conductivity. In the metallic regime we find that vertex corrections enhance the intrinsic spin Hall conductivity and that skew scattering can lead to its values that exceed the quantized ones expected when the chemical potential is inside the spin-orbit induced energy gap. We predict that large spin Hall conductivities will be observable in graphene even when the spin-orbit gap does not survive disorder.

cond-mat.mes-hall↗