arXiv subjects

Hongtao Zhong

Publications and source records attributed to Hongtao Zhong.

3 recordsLinked to original sources

arXiv2023

ASMCap: An Approximate String Matching Accelerator for Genome Sequence Analysis Based on Capacitive Content Addressable Memory

Genome sequence analysis is a powerful tool in medical and scientific research. Considering the inevitable sequencing errors and genetic variations, approximate string matching (ASM) has been adopted in practice for genome sequencing. However, with exponentially increasing bio-data, ASM hardware acceleration is facing severe challenges in improving the throughput and energy efficiency with the accuracy constraint. This paper presents ASMCap, an ASM acceleration approach for genome sequence analysis with hardware-algorithm co-optimization. At the circuit level, ASMCap adopts charge-domain computing based on the capacitive multi-level content addressable memories (ML-CAMs), and outperforms the state-of-the-art ML-CAM-based ASM accelerators EDAM with higher accuracy and energy efficiency. ASMCap also has misjudgment correction capability with two proposed hardware-friendly strategies, namely the Hamming-Distance Aid Correction (HDAC) for the substitution-dominant edits and the Threshold-Aware Sequence Rotation (TASR) for the consecutive indels. Evaluation results show that ASMCap can achieve an average of 1.2x (from 74.7% to 87.6%) and up to 1.8x (from 46.3% to 81.2%) higher F1 score (the key metric of accuracy), 1.4x speedup, and 10.8x energy efficiency improvement compared with EDAM. Compared with the other ASM accelerators, including ResMA based on the comparison matrix, and SaVI based on the seeding strategy, ASMCap achieves an average improvement of 174x and 61x speedup, and 8.7e3x and 943x higher energy efficiency, respectively.

cs.AR↗

arXiv2023

Eliminating Leakage in Volatile Memory with Anti-Ferroelectric Transistors

Cache serves as a temporary data memory module in many general-purpose processors and domain-specific accelerators. Its density, power, speed, and reliability play a critical role in enhancing the overall system performance and quality of service. Conventional volatile memories, including static random-access memory (SRAM) and embedded dynamic random-access memory (eDRAM) in the complementary metal-oxide-semiconductor technology, have high performance and good reliability. However, the inherent leakage in both SRAM and eDRAM hinders further improvement towards smaller feature sizes and higher energy efficiency. Although the emerging nonvolatile memories can eliminate the leakage efficiently, the penalties of lower speed and degraded reliability are significant. This article reveals a new opportunity towards leakage-free volatile static memory beyond the known paradigms of existing volatile and nonvolatile memories. By engineering a double-well energy landscape with the assistance of a clamping voltage bias, leakage-free and refresh-free state retention of volatile memory is achieved for the first time. This new memory is highlighted by both the ultra-low leakage of nonvolatile memories and the speed, energy, and reliability advantages of volatile memories. A proof-of-concept memory is demonstrated using in-house anti-ferroelectric field-effect transistors (AFeFETs), delivering an extrapolated endurance of about 1012 cycles, a retention time of over 10 years, and no subthreshold channel leakage current. Such a new concept of AFeFET-based memory enables an improved balance between density, power, and reliability beyond all existing memory solutions.

cs.ET↗

arXiv2021

Dynamic Ternary Content-Addressable Memory Is Indeed Promising: Design and Benchmarking Using Nanoelectromechanical Relays

Ternary content addressable memory (TCAM) has been a critical component in caches, routers, etc., in which density, speed, power efficiency, and reliability are the major design targets. There have been the conventional low-write-power but bulky SRAM-based TCAM design, and also denser but less reliable or higher-write-power TCAM designs using nonvolatile memory (NVM) devices. Meanwhile, some TCAM designs using dynamic memories have been also proposed. Although dynamic design TCAM is denser than CMOS SRAM TCAM and more reliable than NVM TCAM, the conventional row-by-row refresh operations land up with a bottleneck of interference with normal TCAM activities. Therefore, this paper proposes a custom low-power dynamic TCAM using nanoelectromechanical (NEM) relay devices utilizing one-shot refresh to solve the memory refresh problem. By harnessing the unique NEM relay characteristics with a proposed novel cell structure, the proposed TCAM occupies a small footprint of only 3 transistors (with two NEM relays integrated on the top through the back-end-of-line process), which significantly outperforms the density of 16-transistor SRAM-based TCAM. In addition, evaluations show that the proposed TCAM improves the write energy efficiency by 2.31x, 131x, and 13.5x over SRAM, RRAM, and FeFET TCAMs, respectively; The search energy-delay-product is improved by 12.7x, 1.30x, and 2.83x over SRAM, RRAM, and FeFET TCAMs, respectively.

cs.ET↗