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Hongxi Liu

Publications and source records attributed to Hongxi Liu.

6 recordsLinked to original sources

Single femtosecond laser pulse-driven ferromagnetic switching

Light pulses offer a faster, more energy-efficient, and direct route to magnetic bit writing, pointing toward a hybrid memory and computing paradigm based on photon transmission and spin retention. Yet progress remains hindered, as deterministic, single-pulse optical toggle switching has so far been achieved only with ferrimagnetic materials, which require too specific a rare-earth composition and temperature conditions for technological use. In mainstream ferromagnet--central to spintronic memory and storage--such bistable switching is considered fundamentally difficult, as laser-induced heating does not inherently break time-reversal symmetry. Here, we report coherent magnetization switching in ferromagnets, driven by thermal anisotropy torque with single laser pulses. The toggle switching behavior is robust over a broad range of pulse durations, from femtoseconds to picoseconds, a prerequisite for practical applications. Furthermore, the phenomenon exhibits reproducibility in CoFeB/MgO-based magnetic tunnel junctions with a high magnetoresistance exceeding 110%, as well as the scalability down to nanoscales with remarkable energy efficiency (17 fJ per 100-nm-sized bit). These results mark a notable step toward integrating opto-spintronics into next-generation memory and storage technologies.

cond-mat.mes-hall

On the pancyclicity of $2$-connected $[5,3]$-graphs

A graph $G$ is called an $[s,t]$-graph if any induced subgraph of $G$ of order $s$ has size at least $t$. In 2024, Zhan conjectured that every $2$-connected $[p + 2, p]$-graph of order at least $2p + 3$ and with minimum degree at least $p$ is pancyclic, where $p$ is an integer with $3 \leq p \leq 5$. In this paper, we confirm the conjecture for the case $p=3$, thereby taking the first step toward a complete resolution of the conjecture.

math.CO

Reconfigurable Physical Unclonable Function based on SOT-MRAM Chips

Hardware-based security primitives have become critical to enhancing information security in the Internet of Things (IoT) era. Physical unclonable functions (PUFs) utilize the inherent variations in the manufacturing process to generate cryptographic keys unique to a device. Reconfigurable PUFs (rPUFs) can update cryptographic keys for enhanced security in dynamic operational scenarios involving huge amounts of data, which makes them suitable for implementation in CMOS-integrated spin-orbit torque magnetic random access memory (SOT-MRAM) chips. However, a key challenge is achieving real-time reconfiguration independent of the environmental conditions, particularly the operating temperature. We propose a dual-pulse reconfiguration strategy for rPUFs in CMOS-integrated SOT-MRAM chips that effectively widens the operating window and achieves resilience across a wide range of operating temperatures without the need for dynamic feedback that overly complicates circuit design. The proposed strategy lays a solid foundation for the next generation of hardware-based security primitives to protect IoT architectures.

cs.CR

A Fan-type condition involving bipartite independence number for hamiltonicity in graphs

The bipartite independence number of a graph $G$, denoted by $\widetilde{\alpha}(G)$, is defined as the smallest integer $q$ for which there exist positive integers $s$ and $t$ with $s + t = q + 1$, such that for any two disjoint subsets $A, B \subseteq V(G)$ with $|A| = s$ and $|B| = t$, there exists an edge between $A$ and $B$. In this paper, we prove that for a 2-connected graph $G$ of order at least three, if $\max\{d_G(x), d_G(y)\} \ge \widetilde{\alpha}(G)$ for every pair of nonadjacent vertices $x, y$ at distance two, then $G$ is hamiltonian. Moreover, we prove that if $G$ is 3-connected and $\max\{d_G(x), d_G(y)\} \ge \widetilde{\alpha}(G)+1$ for every pair of nonadjacent vertices $x, y$ at distance two, then $G$ is hamiltonian-connected. Our results generalize the recent work by Li and Liu.

math.CO

Giant Orbital Torque-driven Picosecond Switching in Magnetic Tunnel Junctions

Orbital Hall effect was recently discovered as a novel pathway for driving magnetic moment. However, the integration of orbital Hall effect in magnetic memories suffers from low orbital-to-spin conversion efficiency and incompatibility with magnetic tunnel junctions. Here we demonstrate an orbital Hall effect-driven magnetic tunnel junction based on Ru/W bilayer, where the Ru layer possesses a strong orbital Hall conductivity and the {\alpha}-W layer features an orbital-to-spin conversion efficiency exceeding 90% because of the large orbit-spin diffusivity. By harnessing the giant orbital torque, we achieve a 28.7-picosecond switching and a five to eight-fold reduction in driving voltages over conventional spin-orbit torque magnetic memories. Our work bridges the critical gap between orbital effects and magnetic memory applications, significantly advancing the field of spintronics and orbitronics.

cond-mat.mtrl-sci

Anatomy of Thermally Interplayed Spin-Orbit Torque Driven Antiferromagnetic Switching

Current-induced antiferromagnetic (AFM) switching remains critical in spintronics, yet the interplay between thermal effects and spin torques still lacks clear clarification. Here we experimentally investigate the thermally interplayed spin-orbit torque induced AFM switching in magnetic tunnel junctions via pulse-width dependent reversal and time-resolved measurements. By introducing the Langevin random field into the AFM precession equation, we establish a novel AFM switching model that anatomically explains the experimental observations. Our findings elucidate the currentinduced AFM switching mechanism and offer significant promise for advancements in spintronics.

cond-mat.mes-hall