arXiv subjects

Hongxin Yang

Publications and source records attributed to Hongxin Yang.

At least 55 records · Page 3Linked to original sources

arXiv2021

Structural Twinning-induced Insulating Phase in CrN (111) Films

Electronic states of a correlated material can be effectively modified by structural variations delivered from a single-crystal substrate. In this letter, we show that the CrN films grown on MgO (001) substrates have a (001) orientation, whereas the CrN films on α-Al2O3 (0001) substrates are oriented along (111) direction parallel to the surface normal. Transport properties of CrN films are remarkably different depending on crystallographic orientations. The critical thickness for the metal-insulator transition (MIT) in CrN 111 films is significantly larger than that of CrN 001 films. In contrast to CrN 001 films without apparent defects, scanning transmission electron microscopy results reveal that CrN 111 films exhibit strain-induced structural defects, e. g. the periodic horizontal twinning domains, resulting in an increased electron scattering facilitating an insulating state. Understanding the key parameters that determine the electronic properties of ultrathin conductive layers is highly desirable for future technological applications.

cond-mat.mtrl-sci↗

arXiv2020

Strain-mediated high conductivity in ultrathin antiferromagnetic metallic nitrides

Strain engineering provides the ability to control the ground states and associated phase transition in the epitaxial films. However, the systematic study of intrinsic characters and their strain dependency in transition-metal nitrides remains challenging due to the difficulty in fabricating the stoichiometric and high-quality films. Here we report the observation of electronic state transition in highly crystalline antiferromagnetic CrN films with strain and reduced dimensionality. Shrinking the film thickness to a critical value of ~ 30 unit cells, a profound conductivity reduction accompanied by unexpected volume expansion is observed in CrN films. The electrical conductivity is observed surprisingly when the CrN layer as thin as single unit cell thick, which is far below the critical thickness of most metallic films. We found that the metallicity of an ultrathin CrN film recovers from an insulating behavior upon the removal of as-grown strain by fabrication of first-ever freestanding nitride films. Both first-principles calculations and linear dichroism measurements reveal that the strain-mediated orbital splitting effectively customizes the relatively small bandgap at the Fermi level, leading to exotic phase transition in CrN. The ability to achieve highly conductive nitride ultrathin films by harness strain-controlling over competing phases can be used for utilizing their exceptional characteristics.

cond-mat.mtrl-sci↗

arXiv2020

Electrically switchable Rashba-type Dzyaloshinskii-Moriya interaction and skyrmion in two-dimensional magnetoelectric multiferroics

Realizing topological magnetism and its electric control are intensive topics in the spintronics due to their promising applications in information storage and logic technologies. Here we unveil that both can be achieved in the two-dimensional (2D) magnetoelectric multiferroics. Using first-principles calculations, we show that strong Dzyaloshinskii-Moriya interaction (DMI), which is the key ingredient for the formation of exotic chiral magnetism, could be induced in 2D multiferroics with vertical electric polarization via Rashba effect. We verify that such significant DMI can promote sub-10 nm skyrmion in 2D multiferroics with perpendicular magnetic anisotropy such as CrN monolayer. In addition, the presence of both magnetization and electric polarization in 2D multiferroics provides us unique opportunity for the effective electric control of both strength and chirality of DMI and thereby the topological magnetism. As an example, we introduce the four multiferroic skyrmions with different chirality and polarity that can be manipulated by external field.

cond-mat.mtrl-sci↗

arXiv2020

Néel-type skyrmions and their current-induced motion in van der Waals ferromagnet-based heterostructures

Since the discovery of ferromagnetic two-dimensional (2D) van der Waals (vdW) crystals, significant interest on such 2D magnets has emerged, inspired by their appealing properties and integration with other 2D family for unique heterostructures. In known 2D magnets, spin-orbit coupling (SOC) stabilizes perpendicular magnetic anisotropy (PMA). Such a strong SOC could also lift the chiral degeneracy, leading to the formation of topological magnetic textures such as skyrmions through the Dzyaloshinskii-Moriya interaction (DMI). Here, we report the experimental observation of Néel-type chiral magnetic skyrmions and their lattice (SkX) formation in a vdW ferromagnet Fe3GeTe2 (FGT). We demonstrate the ability to drive individual skyrmion by short current pulses along a vdW heterostructure, FGT/h-BN, as highly required for any skyrmion-based spintronic device. Using first principle calculations supported by experiments, we unveil the origin of DMI being the interfaces with oxides, which then allows us to engineer vdW heterostructures for desired chiral states. Our finding opens the door to topological spin textures in the 2D vdW magnet and their potential device application.

cond-mat.mtrl-sci↗

arXiv2020

Perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction at an oxide/ferromagnetic metal interface

We report on the study of both perpendicular magnetic anisotropy (PMA) and Dzyaloshinskii-Moriya interaction (DMI) at an oxide/ferromagnetic metal (FM) interface, i.e. BaTiO3 (BTO)/CoFeB. Thanks to the functional properties of the BTO film and the capability to precisely control its growth, we are able to distinguish the dominant role of the oxide termination (TiO2 vs BaO), from the moderate effect of ferroelectric polarization in the BTO film, on the PMA and DMI at the oxide/FM interface. We find that the interfacial magnetic anisotropy energy of the BaO-BTO/CoFeB structure is two times larger than that of the TiO2-BTO/CoFeB, while the DMI of the TiO2-BTO/CoFeB interface is larger. We explain the observed phenomena by first-principles calculations, which ascribe them to the different electronic states around the Fermi level at the oxide/ferromagnetic metal interfaces and the different spin-flip processes. This study paves the way for further investigation of the PMA and DMI at various oxide/FM structures and thus their applications in the promising field of energy-efficient devices.

cond-mat.mtrl-sci↗

arXiv2020

Enhancement of ferroelectric performance in PVDF:Fe3O4 nanocomposite based organic multiferroic tunnel junctions

We report on the fabrication of organic multiferroic tunnel junction (OMFTJ) based on an organic barrier of Poly(vinylidene fluoride) (PVDF):Fe3O4 nanocomposite. By adding Fe3O4 nanoparticles into the PVDF barrier, we found that the ferroelectric properties of the OMFTJ are considerably improved compared to that with pure PVDF barrier. It can lead to a tunneling electroresistance (TER) of about 450% at 10K and 100% at room temperature (RT), which is much higher than that of the pure PVDF based device (70% at 10K and 7% at RT). OMFTJs based on the PVDF:Fe3O4 nanocomposite could open new functionalities in smart multiferroic devices via the interplay of the magnetism of nanoparticle with the ferroelectricity of the organic barrier.

physics.app-ph↗

arXiv2020

Large anomalous Hall effect in a hexagonal ferromagnetic Fe5Sn3 single crystal

In this paper, we report an experimental observation of the large anomalous Hall effect (AHE) in a hexagonal ferromagnetic Fe5Sn3 single crystal with current along the b axis and a magnetic field normal to the bc plane. The intrinsic contribution of the anomalous Hall conductance sigma_AH^int was approximately 613 Ω-1 cm-1, which was more than 3 times the maximum value in the frustrated kagome magnet Fe3Sn2 and nearly independent of the temperature over a wide range between 5 and 350 K. The analysis results revealed that the large AHE was dominated by a common, intrinsic term, while the extrinsic contribution, i.e., the skew scattering and side jump, turned out to be small. In addition to the large AHE, it was found the types of majority carriers changed at approximately 275 and 30 K, consistent with the critical temperatures of the spin reorientation. These findings suggest that the hexagonal ferromagnetic Fe5Sn3 single crystal is an excellent candidate to use for the study of the topological features in ferromagnets.

cond-mat.mtrl-sci↗

arXiv2020

Very large Dzyaloshinskii-Moriya interaction in two-dimensional Janus manganese dichalcogenides and its application to realize skyrmion states

The Dzyaloshinskii-Moriya interaction (DMI), which only exists in noncentrosymmetric systems, is responsible for the formation of exotic chiral magnetic states. The absence of DMI in most two-dimensional (2D) magnetic materials is due to their intrinsic inversion symmetry. Here, using first-principles calculations, we demonstrate that significant DMI can be obtained in a series of Janus monolayers of manganese dichalcogenides MnXY in which the difference between X and Y on the opposites sides of Mn breaks the inversion symmetry. In particular, the DMI amplitudes of MnSeTe and MnSTe are comparable to those of state-of-the-art ferromagnet/heavy metal (FM/HM) heterostructures. In addition, by performing Monte Carlo simulations, we find that at low temperatures the ground states of the MnSeTe and MnSTe monolayers can transform from ferromagnetic states with worm-like magnetic domains into the skyrmion states by applying external magnetic field. At increasing temperature, the skyrmion states starts fluctuating above 50 K before an evolution to a completely disordered structure at higher temperature. The present results pave the way for new device concepts utilizing chiral magnetic structures in specially designed 2D ferromagnetic materials.

cond-mat.mtrl-sci↗

arXiv2019

Reversible control of Dzyaloshinskii-Moriya interaction at graphene/Co interface via hydrogen absorption

Using first-principles calculations, we investigate the impact of hydrogenation on the Dzyaloshinskii-Moriya interaction (DMI) at graphene/Co interface. We find that both the magnitude and chirality of DMI can be controlled via hydrogenation absorbed on graphene surface. Our analysis using density of states combined with first-order perturbation theory reveals that the spin splitting and the occupation of Co-d orbitals, especially the dxz and dz2 states, play a crucial role in defining the magnitude and the chirality of DMI. Moreover, we find that the DMI oscillates with a period of two atomic layers as a function of Co thickness what could be explained by analysis of out-of-plane of Co orbitals. Our work elucidates the underlying mechanisms of interfacial DMI origin and provides an alternative route of its control for spintronic applications.

cond-mat.mtrl-sci↗

arXiv2018

Tuning the Dzyaloshinskii-Moriya Interaction in Pt/Co/MgO heterostructures through MgO thickness

The interfacial Dzyaloshinskii-Moriya interaction (DMI) in the ferromagnetic/heavy metal ultra-thin film structures , has attracted a lot of attention thanks to its capability to stabilize Neel-type domain walls (DWs) and magnetic skyrmions for the realization of non-volatile memory and logic devices. In this study, we demonstrate that magnetic properties in perpendicularly magnetized Ta/Pt/Co/MgO/Pt heterostructures, such as magnetization and DMI, can be significantly influenced through both the MgO and the Co ultrathin film thickness. By using a field-driven creep regime domain expansion technique, we find that non-monotonic tendencies of DMI field appear when changing the thickness of MgO and the MgO thickness corresponding to the largest DMI field varies as a function of the Co thicknesses. We interpret this efficient control of DMI as subtle changes of both Pt/Co and Co/MgO interfaces, which provide a method to investigate ultra-thin structures design to achieve skyrmion electronics.

physics.app-ph↗

arXiv2018

First-principles investigation of magnetocrystalline anisotropy oscillations in Co$_{2}$FeAl/Ta heterostructures

We report first-principles investigations of magnetocrystalline anisotropy energy (MCAE) oscillations as a function of capping layer thickness in Heusler alloy Co\textsubscript{2}FeAl/Ta heterostructures. Substantial oscillation is observed in FeAl-interface structure. According to $k$-space and band-decomposed charge density analyses, this oscillation is mainly attributed to the Fermi-energy-vicinal quantum well states (QWS) which are confined between Co\textsubscript{2}FeAl/Ta interface and Ta/vacuum surface. The smaller oscillation magnitude in the Co-interface structure can be explained by the smooth potential transition at the interface. These findings clarify that MCAE in Co\textsubscript{2}FeAl/Ta is not a local property of the interface and that the quantum well effect plays a dominant role in MCAE oscillations of the heterostructures. This work presents the possibility of tuning MCAE by QWS in capping layers, and paves the way for artificially controlling magnetic anisotropy energy in magnetic tunnel junctions.

cond-mat.mtrl-sci↗

arXiv2018

Topological Aspect of Graphene Patchwork with Regular Arrays of Nano Holes

Triangular and honeycomb lattices are dual to each other -- if we puncture holes into a featureless plane in a regular triangular alignment, the remaining body looks like a honeycomb lattice, and vice versa, if the holes are in a regular honeycomb alignment, the remaining body has a feature of triangular lattice. In this work, we reveal that the electronic states in graphene sheets with nano-sized holes in triangular and honeycomb alignments are also dual to each other in a topological sense. Namely, a regular hole array perforated in graphene can open a band gap in the energy-momentum dispersion of relativistic electrons in the pristine graphene, and the insulating states induced by triangular and honeycomb hole arrays are distinct in topology. In a graphene patchwork with regions of these two hole arrays put side by side counterpropagating topological currents emerge at the domain wall. This observation indicates that the cerebrated atomically thin sheet is where topological physics and nanotechnology meet.

cond-mat.mes-hall↗

arXiv2017

Significant Dzyaloshinskii-Moriya Interaction at Graphene-Ferromagnet Interfaces due to Rashba-effect

The possibility of utilizing the rich spin-dependent properties of graphene has attracted great attention in pursuit of spintronics advances. The promise of high-speed and low-energy consumption devices motivates a search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. Here we demonstrate that chiral spin textures are induced at graphene/ferromagnetic metal interfaces. This is unexpected because graphene is a weak spin-orbit coupling material and is generally not expected to induce sufficient Dzyaloshinskii-Moriya interaction to affect magnetic chirality. We demonstrate that graphene induces a new type of Dzyaloshinskii-Moriya interaction due to a Rashba effect. First-principles calculations and experiments using spin-polarized electron microscopy show that this graphene-induced Dzyaloshinskii-Moriya interaction can have similar magnitude as at interfaces with heavy metals. This work paves a new path towards two-dimensional material based spin orbitronics.

cond-mat.mtrl-sci↗

arXiv2017

Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures

Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that a capping layer coating on CoFeB layer is essential to obtain a strong PMA. However, the physical mechanism of such effect remains unclear. In this paper, we investigate the origin of the PMA in MgO/CoFe/metallic capping layer structures by using a first-principles computation scheme. The trend of PMA variation with different capping materials agrees well with experimental results. We find that interfacial PMA in the three-layer structures comes from both the MgO/CoFe and CoFe/capping layer interfaces, which can be analyzed separately. Furthermore, the PMAs in the CoFe/capping layer interfaces are analyzed through resolving the magnetic anisotropy energy by layer and orbital. The variation of PMA with different capping materials is attributed to the different hybridizations of both d and p orbitals via spin-orbital coupling. This work can significantly benefit the research and development of nanoscale STT-MRAM.

cond-mat.mtrl-sci↗

arXiv2016

Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures

Magnetic tunnel junction (MTJ) based on CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM). Large interfacial perpendicular magnetic anisotropy (PMA) is required to achieve high thermal stability. Here we use first-principles calculations to investigate the magnetic anisotropy energy (MAE) of MgO/CoFe/capping layer structures, where the capping materials include 5d metals Hf, Ta, Re, Os, Ir, Pt, Au and 6p metals Tl, Pb, Bi. We demonstrate that it is feasible to enhance PMA by using proper capping materials. Relatively large PMA is found in the structures with capping materials of Hf, Ta, Os, Ir and Pb. More importantly, the MgO/CoFe/Bi structure gives rise to giant PMA (6.09 mJ/m2), which is about three times larger than that of the MgO/CoFe/Ta structure. The origin of the MAE is elucidated by examining the contributions to MAE from each atomic layer and orbital. These findings provide a comprehensive understanding of the PMA and point towards the possibility to achieve advanced-node STT-MRAM with high thermal stability.

cond-mat.mtrl-sci↗

arXiv2016

Controlling Dzyaloshinskii-Moriya Interaction via Chirality Dependent Layer Stacking, Insulator Capping and Electric Field

Using first-principle calculations, we demonstrate several approaches to manipulate Dzyaloshinskii-Moriya Interaction (DMI) in ultrathin magnetic films. First, we find that DMI is significantly enhanced when the ferromagnetic (FM) layer is sandwiched between nonmagnetic (NM) layers inducing additive DMI in NM/FM/NM structures. For instance, as Pt and Ir below Co induce DMI of opposite chirality, inserting Co between Pt (below) and Ir (above) in Ir/Co/Pt trilayers enhances the DMI of Co/Pt bilayers by 15\%. Furthermore, in case of Pb/Co/Pt trilayers (Ir/Fe/Co/Pt multilayers), DMI can be enhanced by 50\% (almost doubled) compared to Co/Pt bilayers reaching a very large DMI amplitude of 2.7 (3.2) meV/atom. Our second approach for enhancing DMI is to use oxide capping layer. We show that DMI is enhanced by 60\% in Oxide/Co/Pt structures compared to Co/Pt bilayers. Moreover, we unveiled the DMI mechanism at Oxide/Co inerface due to interfacial electric field effect, which is different to Fert-Levy DMI at FM/NM interfaces. Finally, we demonstrate that DMI amplitude can be modulated using an electric field with efficiency factor comparable to that of the electric field control of perpendicular magnetic anisotropy in transition metal/oxide interfaces. These approaches of DMI controlling pave the way for skyrmions and domain wall motion-based spintronic applications.

cond-mat.mtrl-sci↗

arXiv2016

First principles investigation of magnetocrystalline anisotropy at the L2$_1$ Full Heusler|MgO interfaces and tunnel junctions

Magnetocrystalline anisotropy at Heusler alloy$|$MgO interfaces have been studied using first principles calculations. It is found that Co terminated Co$_{2}$FeAl$|$MgO interfaces show perpendicular magnetic anisotropy up to 1.31 mJ/m$^2$, while those with FeAl termination exhibit in-plane magnetic anisotropy. Atomic layer resolved analysis indicates that the origin of perpendicular magnetic anisotropy in Co$_{2}$FeAl$|$MgO interfaces can be attributed to the out-of-plane orbital contributions of interfacial Co atoms. At the same time, Co$_{2}$MnGe and Co$_{2}$MnSi interfaced with MgO tend to favor in-plane magnetic anisotropy for all terminations.

cond-mat.mtrl-sci↗

arXiv2016

Room temperature chiral magnetic skyrmion in ultrathin magnetic nanostructures

Magnetic skyrmions are chiral spin structures with a whirling configuration. Their topological properties, nanometer size and the fact that they can be moved by small current densities have opened a new paradigm for the manipulation of magnetisation at the nanoscale. To date, chiral skyrmion structures have been experimentally demonstrated only in bulk materials and in epitaxial ultrathin films and under external magnetic field or at low temperature. Here, we report on the observation of stable skyrmions in sputtered ultrathin Pt/Co/MgO nanostructures, at room temperature and zero applied magnetic field. We use high lateral resolution X-ray magnetic circular dichroism microscopy to image their chiral Néel internal structure which we explain as due to the large strength of the Dzyaloshinskii-Moriya interaction as revealed by spin wave spectroscopy measurements. Our results are substantiated by micromagnetic simulations and numerical models, which allow the identification of the physical mechanisms governing the size and stability of the skyrmions.

cond-mat.mtrl-sci↗