arXiv subjects

Hongying Chen

Publications and source records attributed to Hongying Chen.

5 recordsLinked to original sources

arXiv2024

Layer-by-layer connection for large area single crystal boron nitride multilayer films

Boron nitride (BN) is today considered as one of the most promising materials for many novel applications including bright single photon emission, deep UV opto-electronics, small sized solid-state neutron detector, and high-performance two-dimensional materials, etc. Despite the recent successful fabrication of large-area BN single-crystals (typically <= 5 atomic layers), the scalable growth of thicker single-crystalline BN films still constitutes a great challenge. In this work, we demonstrate an approach to grow large-area multilayer single-crystal BN films by chemical vapor deposition on face-centered cubic Fe-Ni (111) single crystal alloy thin films with different stoichiometric phases. We show that the BN growth is greatly tunable and improved by increasing the Fe content in single-crystal Fe-Ni (111). The formation of pyramid-shaped multilayer BN domains with aligned orientation enables a continuous connection following a layer-by-layer, 'first-meet-first-connect', mosaic stitching mechanism. By means of selected area electron diffraction, micro-photoluminescence spectroscopy in the deep UV and high-resolution transmission electron microscopy, the layer-by-layer connection mechanism is unambiguously evidenced, and the stacking order has been verified to occur as unidirectional AB and ABC stackings, i.e., in the Bernal and rhombohedral BN phase.

cond-mat.mtrl-sci↗

arXiv2024

The ALMaQUEST Survey XV: The Dependence of the Molecular-to-Atomic Gas Ratios on Resolved Optical Diagnostics

The atomic-to-molecular gas conversion is a critical step in the baryon cycle of galaxies, which sets the initial conditions for subsequent star formation and influences the multi-phase interstellar medium. We compiled a sample of 94 nearby galaxies with observations of multi-phase gas contents by utilizing public H I, CO, and optical IFU data from the MaNGA survey together with new FAST H I observations. In agreement with previous results, our sample shows that the global molecular-to-atomic gas ratio ($R_{\rm mol} \equiv$ log $M_{\rm H_2}/M_{\rm H\ I}$) is correlated with the global stellar mass surface density $\mu_*$ with a Kendall's $\tau$ coefficient of 0.25 and $p < 10^{-3}$, less tightly but still correlated with stellar mass and NUV$-$ r color, and not related to the specific star formation rate (sSFR). The cold gas distribution and kinematics inferred from the H I and CO global profile asymmetry and shape do not significantly rely on $R_{\rm mol}$. Thanks to the availability of kpc-scale observations of MaNGA, we decompose galaxies into H II, composite, and AGN-dominated regions by using the BPT diagrams. With increasing $R_{\rm mol}$, the fraction of H II regions within 1.5 effective radius decreases slightly; the density distribution in the spatially resolved BPT diagram also changes significantly, suggesting changes in metallicity and ionization states. Galaxies with high $R_{\rm mol}$ tend to have high oxygen abundance, both at one effective radius with a Kendall's $\tau$ coefficient of 0.37 ($p < 10^{-3}$) and their central regions. Among all parameters investigated here, the oxygen abundance at one effective radius has the strongest relation with global $R_{\rm mol}$, but the dependence of gas conversion on gas distribution and galaxy ionization states is weak.

astro-ph.GA↗

arXiv2023

Active learning of effective Hamiltonian for super-large-scale atomic structures

The first-principles-based effective Hamiltonian scheme provides one of the most accurate modeling technique for large-scale structures, especially for ferroelectrics. However, the parameterization of the effective Hamiltonian is complicated and can be difficult for some complex systems such as high-entropy perovskites. Here, we propose a general form of effective Hamiltonian and develop an active machine learning approach to parameterize the effective Hamiltonian based on Bayesian linear regression. The parameterization is employed in molecular dynamics simulations with the prediction of energy, forces, stress and their uncertainties at each step, which decides whether first-principles calculations are executed to retrain the parameters. Structures of BaTiO$_3$, Pb(Zr$_{0.75}$Ti$_{0.25}$)O$_3$ and (Pb,Sr)TiO$_3$ system are taken as examples to show the accuracy of this approach, as compared with conventional parametrization method and experiments. This machine learning approach provides a universal and automatic way to compute the effective Hamiltonian parameters for any considered complex systems with super-large-scale (more than $10^7$ atoms) atomic structures.

cond-mat.mtrl-sci↗

arXiv2023

Flexoelectricity-stabilized ferroelectric phase with enhanced reliability in ultrathin La:HfO2 films

Doped HfO2 thin films exhibit robust ferroelectric properties even for nanometric thicknesses, are compatible with current Si technology and thus have great potential for the revival of integrated ferroelectrics. Phase control and reliability are core issues for their applications. Here we show that, in (111)-oriented 5%La:HfO2 (HLO) epitaxial thin films deposited on (La0.3Sr0.7)(Al0.65Ta0.35)O3 substrates, the flexoelectric effect, arising from the strain gradient along the films normal, induces a rhombohedral distortion in the otherwise Pca21 orthorhombic structure. Density functional calculations reveal that the distorted structure is indeed more stable than the pure Pca21 structure, when applying an electric field mimicking the flexoelectric field. This rhombohedral distortion greatly improves the fatigue endurance of HLO thin films by further stabilizing the metastable ferroelectric phase against the transition to the thermodynamically stable non-polar monoclinic phase during repetitive cycling. Our results demonstrate that the flexoelectric effect, though negligibly weak in bulk, is crucial to optimize the structure and properties of doped HfO2 thin films with nanometric thicknesses for integrated ferroelectric applications.

cond-mat.mtrl-sci↗

arXiv2021

Topologically Protected Ferroelectric Domain Wall Memory with Large Readout Current

The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics is emerging consequently. Here we demonstrate the highly stable and fatigue-resistant nonvolatile ferroelectric memory device based on deterministic creation and erasure of conductive domain wall geometrically confined inside a topological domain structure. By introducing a pair of delicately designed co-axial electrodes onto the epitaxial BiFeO3 film, one can easily create quadrant center topological polar domain structure. More importantly, a reversible switching of such center topological domain structure between the convergent state with highly conductive confined wall and the divergent state with insulating confined wall can be realized, hence resulting in an apparent resistance change with a large On/Off ratio > 104 and a technically preferred readout current (up to 40 nA). Owing to the topological robustness of the center domain structure, the device exhibits the excellent restoration repeatability over 106 cycles and a long retention over 12 days (> 106 s). This work demonstrates a good example for implementing the exotic polar topologies in high-performance nanoscale devices, and would spur more interest in exploring the rich emerging applications of these exotic topological states.

physics.app-ph↗