arXiv subjects

Hongyu Yu

Publications and source records attributed to Hongyu Yu.

At least 55 records · Page 3Linked to original sources

arXiv2022

Viko 2.0: A Hierarchical Gecko-inspired Adhesive Gripper with Visuotactile Sensor

Robotic grippers with visuotactile sensors have access to rich tactile information for grasping tasks but encounter difficulty in partially encompassing large objects with sufficient grip force. While hierarchical gecko-inspired adhesives are a potential technique for bridging performance gaps, they require a large contact area for efficient usage. In this work, we present a new version of an adaptive gecko gripper called Viko 2.0 that effectively combines the advantage of adhesives and visuotactile sensors. Compared with a non-hierarchical structure, a hierarchical structure with a multimaterial design achieves approximately a 1.5 times increase in normal adhesion and double in contact area. The integrated visuotactile sensor captures a deformation image of the hierarchical structure and provides a real-time measurement of contact area, shear force, and incipient slip detection at 24 Hz. The gripper is implemented on a robotic arm to demonstrate an adaptive grasping pose based on contact area, and grasps objects with a wide range of geometries and textures.

cs.RO↗

arXiv2022

A Thin Format Vision-Based Tactile Sensor with A Micro Lens Array (MLA)

Vision-based tactile sensors have been widely studied in the robotics field for high spatial resolution and compatibility with machine learning algorithms. However, the currently employed sensor's imaging system is bulky limiting its further application. Here we present a micro lens array (MLA) based vison system to achieve a low thickness format of the sensor package with high tactile sensing performance. Multiple micromachined micro lens units cover the whole elastic touching layer and provide a stitched clear tactile image, enabling high spatial resolution with a thin thickness of 5 mm. The thermal reflow and soft lithography method ensure the uniform spherical profile and smooth surface of micro lens. Both optical and mechanical characterization demonstrated the sensor's stable imaging and excellent tactile sensing, enabling precise 3D tactile information, such as displacement mapping and force distribution with an ultra compact-thin structure.

cs.RO↗

arXiv2022

Edge-based Tensor prediction via graph neural networks

Message-passing neural networks (MPNN) have shown extremely high efficiency and accuracy in predicting the physical properties of molecules and crystals, and are expected to become the next-generation material simulation tool after the density functional theory (DFT). However, there is currently a lack of a general MPNN framework for directly predicting the tensor properties of the crystals. In this work, a general framework for the prediction of tensor properties was proposed: the tensor property of a crystal can be decomposed into the average of the tensor contributions of all the atoms in the crystal, and the tensor contribution of each atom can be expanded as the sum of the tensor projections in the directions of the edges connecting the atoms. On this basis, the edge-based expansions of force vectors, Born effective charges (BECs), dielectric (DL) and piezoelectric (PZ) tensors were proposed. These expansions are rotationally equivariant, while the coefficients in these tensor expansions are rotationally invariant scalars which are similar to physical quantities such as formation energy and band gap. The advantage of this tensor prediction framework is that it does not require the network itself to be equivariant. Therefore, in this work, we directly designed the edge-based tensor prediction graph neural network (ETGNN) model on the basis of the invariant graph neural network to predict tensors. The validity and high precision of this tensor prediction framework were shown by the tests of ETGNN on the extended systems, random perturbed structures and JARVIS-DFT datasets. This tensor prediction framework is general for nearly all the GNNs and can achieve higher accuracy with more advanced GNNs in the future.

cond-mat.mtrl-sci↗

arXiv2021

Complex Spin Hamiltonian Represented by Artificial Neural Network

The effective spin Hamiltonian method is widely adopted to simulate and understand the behavior of magnetism. However, the magnetic interactions of some systems, such as itinerant magnets, are too complex to be described by any explicit function, which prevents an accurate description of magnetism in such systems. Here, we put forward a machine learning (ML) approach, applying an artificial neural network (ANN) and a local spin descriptor to develop effective spin potentials for any form of interaction. The constructed Hamiltonians include an explicit Heisenberg part and an implicit non-linear ANN part. Such a method successfully reproduces artificially constructed models and also sufficiently describe the itinerant magnetism of bulk Fe3GeTe2. Our work paves a new way for investigating complex magnetic phenomena (e.g., skyrmions) of magnetic materials.

cond-mat.mtrl-sci↗

arXiv2021

Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering

We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally doped GaN layer, the gate leakage current is suppressed and the gate breakdown voltage is boosted from 10.6 to 14.6 V with negligible influence on the threshold voltage and on-resistance. Time-dependent gate breakdown measurements reveal that the maximum gate drive voltage increases from 6.2 to 10.6 V for a 10-year lifetime with a 1% gate failure rate. This method effectively expands the operating voltage margin of the p-GaN gate HEMTs without any other additional process steps.

physics.app-ph↗

arXiv2021

Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs

We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing condition window (600 - 700 oC, 1 - 4 min). Results from similar common-anode Schottky junctions made of Au/p-GaN, Al/Ti/p-GaN and Au/Ti/graphene/p-GaN junctions demonstrated that all the three layers (Au, Ti and p-GaN) are essential for the increased resistance. Raman characterization of the p-GaN showed a decrease of the Mg-N bonding, i.e., the deactivation of Mg, which is consistent with the Hall measurement results. Moreover, this high-resistance junction structure was employed in p-GaN gate AlGaN/GaN HEMTs. It was shown to be an effective gate technology that was capable to boost the gate breakdown voltage from 9.9 V to 13.8 V with a negligible effect on the threshold voltage or the sub-threshold slope.

cond-mat.mtrl-sci↗

arXiv2020

Superionic State Discovered in Ternary Hypervalent Silicon Hydrides via Sodium inside the Earth

Superionic states are phases of matters that can simultaneously exhibit some of the properties of a fluid and of a solid. Superionic states of ice, H$_{3}$O, He-H$_{2}$O or He-NH$_{3}$ compounds have been reported in previous works. Silicon, sodium, and hydrogen are abundant elements inside the earth. Here, we use ab initio calculations to show that, at extreme conditions inside the earth, Na, Si, and H can form many hypervalent compounds that some of them can exist every close to ambient pressure, and surprisingly a previously unknown type of superionic state of $P\overline3m1 - $Na$_{2}$SiH$_{6}$ can form as well. Our work focused on new superionic state of Na$_{2}$SiH$_{6}$, and the results also reveal several different hypervalent Si-H anions discovered, which are different from individual SiH$_{5}^{\,-}$ and octahedral SiH$_{6}^{\,2-}$ in previous research of ternary alkali hypervalent silicon hydrides. Our work provides some advice on further investigations on potential ternary hydrides inside the earth.

cond-mat.mtrl-sci↗

arXiv2020

Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-gate-sweep Measurements

In this work, we studied the gate breakdown mechanisms of p-GaN gate AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For the first time, three different breakdown mechanisms were observed and identified separately in the same devices: the metal/p-GaN junction breakdown, the p-GaN/AlGaN/GaN junction breakdown, and the passivation related breakdown. This method is an effective method to determine the breakdown mechanisms. The different BD mechanisms were further confirmed by scanning electron microscopy (SEM). Finally, the temperature dependences of the three BD mechanisms were measured and compared. This analysis method was also employed in the devices with a different passivation material and showed its applicability.

physics.app-ph↗

arXiv2019

Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs using Metal/Graphene Gates

In this work, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-GaN gate HEMTs, which wraps around the bottom of the gate forming Ti/graphene/p-GaN at the bottom and Ti/graphene/ SiNx on the two sides. Compared to the Au/Ti/p-GaN HEMTs without graphene, the insertion of graphene can increase the ION/IOFF ratios by a factor of 50, increase the VTH by 0.30 V and reduce the off-state gate leakage by 50 times. Additionally, this novel gate structure has better thermal stability. After thermal annealing at 350 °C, gate breakdown voltage holds at 12.1 V, which is first reported for Schottky gate p-GaN HEMTs. This is considered to be a result of the 0.24 eV increase in Schottky barrier height and the better quality of the Ti/graphene/p-GaN and Ti/graphene/SiNx interfaces. This approach is very effective in improving the Ion/Iff ratio and gate BV of normally-OFF GaN HEMTs.

physics.app-ph↗

arXiv2019

Exploration of the bright and dark exciton landscape and fine structure of MoS$_2$ (using G$_0$W$_0$-BSE)

Spectral ordering between dark and bright excitons in transition metal dichalcogenides is of increasing interest for optoelectronic applications. However, little is known about dark exciton energies and their binding energies. We report the exciton landscape including momentum-forbidden dark excitons of MoS$_{2}$ monolayer using single shot GW-Bethe Salpeter equation (G$_{0}$W$_{0}$-BSE) calculations. We find the lowest-energy exciton to be indirect at ($\textrm K'_{v} \rightarrow \textrm K_{c}$) in agreement with recent GdW-BSE calculations [2D Mater. 6, 035003 (2019)]. We also find that by large, dark exciton binding energies ($E_b$) scale with the quasiparticle energies ($E_g$) according to the $E_b/E_g=0.25$ rule. Differences in exciton binding energies are explained using an orbital theory.

cond-mat.mtrl-sci↗

arXiv2019

Oxygen-based digital etching of AlGaN/GaN structures with AlN as etch-stop layers

O2-plamsa-based digital etching of Al0.25Ga0.75N with a 0.8 nm AlN spacer on GaN was investigated. At 40 W RF bias power and 40 sccm oxygen flow, the etch depth of Al0.25Ga0.75N was 5.7 nm per cycle. The 0.8 nm AlN spacer layer acted as an etch-stop layer in 3 cycles. The surface roughness improved to 0.33 nm after 7 digital etch cycles. Compared to the dry etch only approach, this technique causes less damages. It was shown to be effective in precisely controlling the AlGaN etch depth required for recessed-AlGaN HEMTs.

physics.app-ph↗

arXiv2019

Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors

In this work, AlGaN/GaN HEMTs with dual-layer SiNx stressors (composed of a low-stress layer and a high-stress layer) were investigated. The low-stress padding layer solved the surface damage problem caused during the deposition of the high-stress SiNx, and provided a good passivated interface. The HEMTs with dual-layer stressors showed a 1 V increase in the threshold voltage (Vth) with comparable on-current and RF current gain to those without stressors. Moreover, the off-current (I_off) was shown to be reduced by one to three orders of magnitude in the strained devices as a result of the lower electric field in AlGaN, which suppressed the gate injection current. The dual-layer stressor scheme supports strain engineering as an effective approach in the pursuit of the normally-off operation of AlGaN/GaN HEMTs.

physics.app-ph↗

arXiv2019

A Method to Determine Broadband Complex Permittivity of Thin Film Dielectric Materials up to 60 GHz

This paper describes a method to determine the complex permittivity of a thin dielectric film from finite element analysis and microstrip line measurements. Two transmission line equivalent circuit models were used for the cases of an air-filled line and a lossless line, whose distributed elements can be calculated from full wave finite element simulations. With these calculated distributed elements and microstrip line measurements, the complex permittivity was extracted. The technique utilizes a simple way to separate the dielectric loss from the measured total loss and the complex permittivity was extracted using the measured propagation constant. A rational dielectric model was employed to fit the extracted complex permittivity, which ensures causality of the final solution. The best fitting results obtained through this procedure are considered as the final permittivity results, which have shown excellent match to the data sheet values. Moreover, simulations using the fitted permittivity exhibit good agreement with the experimental propagation constant data of microstrip lines up to 60 GHz. The proposed method was demonstrated on polyimide, and it can be applied to other thin film materials.

physics.app-ph↗

arXiv2019

Silicon Nitride Stress Liner Impacts on the Electrical Characteristics of AlGaN/GaN HEMTs

Due to the piezoelectric nature of GaN, the 2DEG in AlGaN/GaN HEMT could be engineered by strain. In this work, SiNx deposited using dual-frequency PECVD was used as a stressor. The output performance of the devices was dominated by the surface passivation instead of the stress effect. However, the threshold voltage was increased by the induced stress, supporting strain engineering as an effective approach to pursue the normally-off operation of AlGaN/GaN HEMTs.

physics.app-ph↗

arXiv2019

Achieving sub-1 Ohm-mm Non-Recess S/D Contact Resistance in GaN HEMTs Utilizing Simple CMOS Compatible La/Ti/Al/Ti Metal Contacts

In this paper, we report the use of lanthanum (La) in S/D contacts of GaN HEMTs, achieving 0.97 Ohm-mm contact resistance without S/D recess. The HEMTs show well-behaved electrical characteristics and satisfactory reliability. Our studies show that La, a CMOS compatible metal, is promising to lower GaN HEMT S/D contact resistance. La's low work function (3.5 eV) is beneficial for reducing the barrier between the metals and GaN. The Ohmic contact formation mechanism involved was shown to be different from conventional Ti/Al films. Spherical-shaped high-La regions formed near the surface during annealing. La diffuses into the AlGaN layer, and the overlap of La and Al peaks is significantly increased compared with that before annealing.

physics.app-ph↗

arXiv2015

High-pressure structures and superconductivity of bismuth hydrides

We have systematically searched for the ground state structures of bismuth hydrides based on evolutionary algorithm method and particle swarm optimization algorithm method. Given only rich-hydrogen region, except for BiH$_{3}$, other hydrides (BiH, BiH$_{2}$, BiH$_{4}$, BiH$_{5}$, BiH$_{6}$) have been predicted to be stable with pressurization. With the increase of hydrogen content, hydrogen exists in bismuth hydrides with the different forms and presents the characteristics of ionicity. Under high pressure, the remarkable structural feature is the emergence of H$_{2}$ units in BiH$_{2}$, BiH$_{4}$ and BiH$_{6}$, and BiH$_{6}$ adopts a startling layered structure intercalated by H$_{2}$ and the linear H$_{3}$ units. Further calculations show these energetically stable hydrides are good metal and their metallic pressures are lower than that of pure solid hydrogen because of the doping impurities. The $T_{c}$ in the range of 20-119 K has been calculated by the Allen-Dynes modified McMillan equation, which indicates all these stable hydrides are potential high-temperature superconductors. Remarkably, it is the H-Bi-H and Bi atoms vibrations rather than the high-frequency H$_{2}$ or H$_{3}$ units that dominate the superconductivity. In addition, hydrogen content has a great influence on the superconducting transition temperature.

cond-mat.supr-con↗

arXiv2015

The unexpected binding and superconductivity in SbH4 at high pressure

The semimetal antimony (Sb) element doped into hydrogen has been performed theoretically to explored high-pressure crystal structure and superconductivity of antimony hydrides. The unexpected stoichiometry $\textrm{SbH}_\textrm{4}$ with $P6_3/mmc$ symmetry is found to have most negative enthalpy and embody the coexistence of covalent and ionic bonds. It is a metallic phase and stable in the pressure ranges of 127-300 GPa. Furthermore, a superconducting critical temperature ($T_c$) of 106 K is obtained at 150 GPa by employing the Allen-Dynes modified McMillan equation. In addition, an extrusive distinguishing feature is the presence of soft phonon modes, which is primary contribution to the strength of electron-phonon coupling.

cond-mat.supr-con↗

arXiv2015

Decomposition of solid hydrogen bromide at high pressure

The stability of different stoichiometric H$_n$Br ($n$=1-7) compounds under pressure are extensively studied using density functional theory calculations. Five new energetically stable stoichiometries of H$_2$Br, H$_3$Br, H$_4$Br, H$_5$Br, and H$_7$Br were uncovered at high pressure. The results show that HBr is stable below 64 GPa, then decomposes into new compound H$_2$Br and Br$_2$ molecular crystal. For H$_2$Br and H$_3$Br compounds, they were found to become stable above 30 GPa and 8 GPa, respectively. In addition, we accidentally discovered the triangular H$_3^+$ species in H$_5$Br compounds at 100 GPa. Further electron-phonon coupling calculations predicted that hydrogen-rich H$_2$Br and H$_4$Br compounds are superconductors with critical temperature of superconductivity $T_c$ of 12.1 K and 2.4 K at 240 GPa, respectively.

cond-mat.supr-con↗