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Hongyun Zhang

Publications and source records attributed to Hongyun Zhang.

At least 37 records · Page 2Linked to original sources

COSEE: Consistency-Oriented Signal-Based Early Exiting via Calibrated Sample Weighting Mechanism

Early exiting is an effective paradigm for improving the inference efficiency of pre-trained language models (PLMs) by dynamically adjusting the number of executed layers for each sample. However, in most existing works, easy and hard samples are treated equally by each classifier during training, which neglects the test-time early exiting behavior, leading to inconsistency between training and testing. Although some methods have tackled this issue under a fixed speed-up ratio, the challenge of flexibly adjusting the speed-up ratio while maintaining consistency between training and testing is still under-explored. To bridge the gap, we propose a novel Consistency-Oriented Signal-based Early Exiting (COSEE) framework, which leverages a calibrated sample weighting mechanism to enable each classifier to emphasize the samples that are more likely to exit at that classifier under various acceleration scenarios. Extensive experiments on the GLUE benchmark demonstrate the effectiveness of our COSEE across multiple exiting signals and backbones, yielding a better trade-off between performance and efficiency.

cs.LG↗

Light-induced ultrafast glide-mirror symmetry breaking in black phosphorus

Symmetry breaking plays an important role in fields of physics, ranging from particle physics to condensed matter physics. In solid-state materials, phase transitions are deeply linked to the underlying symmetry breakings, resulting in a rich variety of emergent phases. Such symmetry breakings are often induced by controlling the chemical composition and temperature or applying an electric field and strain, etc. In this work, we demonstrate an ultrafast glide-mirror symmetry breaking in black phosphorus through Floquet engineering. Upon near-resonance pumping, a light-induced full gap opening is observed at the glide-mirror symmetry protected nodal ring, suggesting light-induced breaking of the glide-mirror symmetry. Moreover, the full gap is observed only in the presence of the light-field and disappears almost instantaneously ($\ll$100 fs) when the light-field is turned off, suggesting the ultrafast manipulation of the symmetry and its Floquet engineering origin. This work not only demonstrates light-matter interaction as an effective way to realize ultrafast symmetry breaking in solid-state materials, but also moves forward towards the long-sought Floquet topological phases.

cond-mat.mes-hall↗

Manipulating the symmetry of photon-dressed electronic states

Strong light-matter interaction provides opportunities for tailoring the physical properties of quantum materials on the ultrafast timescale by forming photon-dressed electronic states, i.e., Floquet-Bloch states. While the light field can in principle imprint its symmetry properties onto the photon-dressed electronic states, so far, how to experimentally detect and further engineer the symmetry of photon-dressed electronic states remains elusive. Here by utilizing time- and angle-resolved photoemission spectroscopy (TrARPES) with polarization-dependent study, we directly visualize the parity symmetry of Floquet-Bloch states in black phosphorus. The photon-dressed sideband exhibits opposite photoemission intensity to the valence band at the $Γ$ point,suggesting a switch of the parity induced by the light field. Moreover, a "hot spot" with strong intensity confined near $Γ$ is observed, indicating a momentum-dependent modulation beyond the parity switch. Combining with theoretical calculations, we reveal the light-induced engineering of the wave function of the Floquet-Bloch states as a result of the hybridization between the conduction and valence bands with opposite parities, and show that the "hot spot" is intrinsically dictated by the symmetry properties of black phosphorus. Our work suggests TrARPES as a direct probe for the parity of the photon-dressed electronic states with energy- and momentum-resolved information, providing an example for engineering the wave function and symmetry of such photon-dressed electronic states via Floquet engineering.

cond-mat.mes-hall↗

Correlated topological flat bands in rhombohedral graphite

Flat bands and nontrivial topological physics are two important topics of condensed matter physics. With a unique stacking configuration analogous to the Su-Schrieffer-Heeger (SSH) model, rhombohedral graphite (RG) is a potential candidate for realizing both flat bands and nontrivial topological physics. Here we report experimental evidence of topological flat bands (TFBs) on the surface of bulk RG, which are topologically protected by bulk helical Dirac nodal lines via the bulk-boundary correspondence. Moreover, upon {\it in situ} electron doping, the surface TFBs show a splitting with exotic doping evolution, with an order-of-magnitude increase in the bandwidth of the lower split band, and pinning of the upper band near the Fermi level. These experimental observations together with Hartree-Fock calculations suggest that correlation effects are important in this system. Our results demonstrate RG as a new platform for investigating the rich interplay between nontrivial band topology, correlation effects, and interaction-driven symmetry-broken states.

cond-mat.str-el↗

Ultrafast Carrier Relaxation Dynamics in a Nodal-Line Semimetal PtSn$_4$

Topological Dirac nodal-line semimetals host topologically nontrivial electronic structure with nodal-line crossings around the Fermi level, which could affect the photocarrier dynamics and lead to novel relaxation mechanisms. Herein, by using time- and angle-resolved photoemission spectroscopy, we reveal the previously-inaccessible linear dispersions of the bulk conduction bands above the Fermi level in a Dirac nodal-line semimetal PtSn$_4$, as well as the momentum and temporal evolution of the gapless nodal lines. A surprisingly ultrafast relaxation dynamics within a few hundred femtoseconds is revealed for photoexcited carriers in the nodal line. Theoretical calculations suggest that such ultrafast carrier relaxation is attributed to the multichannel scatterings among the complex metallic bands of PtSn$_4$ via electron-phonon coupling. In addition, a unique dynamic relaxation mechanism contributed by the highly anisotropic Dirac nodal-line electronic structure is also identified. Our work provides a comprehensive understanding of the ultrafast carrier dynamics in a Dirac nodal-line semimetal.

cond-mat.mes-hall↗

Observation of dichotomic field-tunable electronic structure in twisted monolayer-bilayer graphene

Twisted bilayer graphene (tBLG) provides a fascinating platform for engineering flat bands and inducing correlated phenomena. By designing the stacking architecture of graphene layers, twisted multilayer graphene can exhibit different symmetries with rich tunability. For example, in twisted monolayer-bilayer graphene (tMBG) which breaks the C2z symmetry, transport measurements reveal an asymmetric phase diagram under an out-of-plane electric field, exhibiting correlated insulating state and ferromagnetic state respectively when reversing the field direction. Revealing how the electronic structure evolves with electric field is critical for providing a better understanding of such asymmetric field-tunable properties. Here we report the experimental observation of field-tunable dichotomic electronic structure of tMBG by nanospot angle-resolved photoemission spectroscopy (NanoARPES) with operando gating. Interestingly, selective enhancement of the relative spectral weight contributions from monolayer and bilayer graphene is observed when switching the polarity of the bias voltage. Combining experimental results with theoretical calculations, the origin of such field-tunable electronic structure, resembling either tBLG or twisted double-bilayer graphene (tDBG), is attributed to the selectively enhanced contribution from different stacking graphene layers with a strong electron-hole asymmetry. Our work provides electronic structure insights for understanding the rich field-tunable physics of tMBG.

cond-mat.mes-hall↗

Evolution of flat band and role of lattice relaxations in twisted bilayer graphene

Magic-angle twisted bilayer graphene (MATBG) exhibits correlated phenomena such as superconductivity and Mott insulating state related to the weakly dispersing flat band near the Fermi energy. Beyond its moiré period, such flat band is expected to be sensitive to lattice relaxations. Thus, clarifying the evolution of the electronic structure with twist angle is critical for understanding the physics of MATBG. Here, we combine nanospot angle-resolved photoemission spectroscopy and atomic force microscopy to resolve the fine electronic structure of the flat band and remote bands, and their evolution with twist angles from 1.07$^\circ$ to 2.60$^\circ$. Near the magic angle, dispersion is characterized by a flat band near the Fermi energy with a strongly reduced bandwidth. Moreover, near 1.07$^\circ$, we observe a spectral weight transfer between remote bands at higher binding energy and extract the modulated interlayer spacing near the magic angle. Our work provides direct spectroscopic information on flat band physics and highlights the role of lattice relaxations.

cond-mat.mes-hall↗

Floquet engineering of black phosphorus upon below-gap pumping

Time-periodic light field can dress the electronic states and lead to light-induced emergent properties in quantum materials. While below-gap pumping is regarded favorable for Floquet engineering, so far direct experimental evidence of momentum-resolved band renormalization still remains missing. Here, we report experimental evidence of light-induced band renormalization in black phosphorus by pumping at photon energy of 160 meV which is far below the band gap, and the distinction between below-gap pumping and near-resonance pumping is revealed. Our work demonstrates light-induced band engineering upon below-gap pumping, and provides insights for extending Floquet engineering to more quantum materials.

cond-mat.mes-hall↗

Revealing the two-dimensional electronic structure and anisotropic superconductivity in a natural van der Waals superlattice (PbSe)$_{1.14}$NbSe$_2$

Van der Waals superlattices are important for tailoring the electronic structures and properties of layered materials. Here we report the superconducting properties and electronic structure of a natural van der Waals superlattice (PbSe)$_{1.14}$NbSe$_2$. Anisotropic superconductivity with a transition temperature $T_c$ = 5.6 $\pm$ 0.1 K, which is higher than monolayer NbSe$_2$, is revealed by transport measurements on high-quality samples. Angle-resolved photoemission spectroscopy (ARPES) measurements reveal the two-dimensional electronic structure and a charge transfer of 0.43 electrons per NbSe$_2$ unit cell from the blocking PbSe layer. In addition, polarization-dependent ARPES measurements reveal a significant circular dichroism with opposite contrast at K and K' valleys, suggesting a significant spin-orbital coupling and distinct orbital angular momentum. Our work suggests natural van der Waals superlattice as an effective pathway for achieving intriguing properties distinct from both the bulk and monolayer samples.

cond-mat.supr-con↗

Angle-resolved photoemission spectroscopy

For solid-state materials, the electronic structure, E(k), is critical in determining a crystal's physical properties. By experimentally detecting the electronic structure, the fundamental physics can be revealed. Angle-resolved photoemission spectroscopy (ARPES) is a powerful technique for directly observing the electronic structure with energy- and momentum-resolved information. Over the past decades, major improvements in the energy and momentum resolution, alongside the extension of ARPES observables to spin (SpinARPES), micrometer or nanometer lateral dimensions (MicroARPES/NanoARPES), and femtosecond timescales (TrARPES), have led to major scientific advances. These advantages have been achieved across a wide range of quantum materials, such as high-temperature superconductors, topological materials, two-dimensional materials and heterostructures. This primer introduces key aspects of ARPES principles, instrumentation, data analysis, and representative scientific cases to demonstrate the power of the method. Perspectives and challenges on future developments are also discussed.

cond-mat.mtrl-sci↗

Coexistence of extended flat band and Kekulé order in Li-intercalated graphene

Doping graphene near the 1/4 filling to shift the extended flat band and van Hove singularity below E$_F$ has been highly desirable. Here we report the experimental observation of an extended flat band below E$_F$ in Li-intercalated graphene. Strong electron-phonon interaction is clearly identified by notable kinks in the band dispersion. Moreover, the evolution of the band structure upon Li intercalation shows that the extended flat band and the Kekulé order emerge simultaneously. Our work provides opportunities for investigating flat band related instabilities and its interplay with the Kekulé order

cond-mat.mes-hall↗

Triples-to-Text Generation with Reinforcement Learning Based Graph-augmented Neural Networks

Considering a collection of RDF triples, the RDF-to-text generation task aims to generate a text description. Most previous methods solve this task using a sequence-to-sequence model or using a graph-based model to encode RDF triples and to generate a text sequence. Nevertheless, these approaches fail to clearly model the local and global structural information between and within RDF triples. Moreover, the previous methods also face the non-negligible problem of low faithfulness of the generated text, which seriously affects the overall performance of these models. To solve these problems, we propose a model combining two new graph-augmented structural neural encoders to jointly learn both local and global structural information in the input RDF triples. To further improve text faithfulness, we innovatively introduce a reinforcement learning (RL) reward based on information extraction (IE). We first extract triples from the generated text using a pretrained IE model and regard the correct number of the extracted triples as the additional RL reward. Experimental results on two benchmark datasets demonstrate that our proposed model outperforms the state-of-the-art baselines, and the additional reinforcement learning reward does help to improve the faithfulness of the generated text.

cs.CL↗

Spatially-resolved electronic structure of stripe domains in IrTe$_2$ through electronic structure microscopy

Phase separation in the nanometer- to micrometer-scale is characteristic for correlated materials, for example, high temperature superconductors, colossal magnetoresistance manganites, Mott insulators, etc. Resolving the electronic structure with spatially-resolved information is critical for revealing the fundamental physics of such inhomogeneous systems yet this is challenging experimentally. Here by using nanometer- and micrometer-spot angle-resolved photoemission spectroscopies (NanoARPES and MicroARPES), we reveal the spatially-resolved electronic structure in the stripe phase of IrTe$_2$. Each separated domain shows two-fold symmetric electronic structure with the mirror axis aligned along 3 equivalent directions, and 6$\times$1 replicas are clearly identified. Moreover, such electronic structure inhomogeneity disappears across the stripe phase transition, suggesting that electronic phase with broken symmetry induced by the 6$\times$1 modulation is directly related to the stripe phase transition of IrTe$_2$. Our work demonstrates the capability of NanoARPES and MicroARPES in elucidating the fundamental physics of phase-separated materials.

cond-mat.mes-hall↗

Experimental evidence of plasmarons and effective fine structure constant in electron-doped graphene/h-BN heterostructure

Electron-electron interaction is fundamental in condensed matter physics and can lead to composite quasiparticles called plasmarons, which strongly renormalize the dispersion and carry information of electron-electron coupling strength as defined by the effective fine structure constant $α_{ee}^*$. Although h-BN with unique dielectric properties has been widely used as an important substrate for graphene, so far there is no experimental report of plasmarons in graphene/h-BN yet. Here, we report direct experimental observation of plasmaron dispersion in graphene/h-BN heterostructures through angle-resolved photoemission spectroscopy (ARPES) measurements upon {\it in situ} electron doping. Characteristic diamond-shaped dispersion is observed near the Dirac cone in both 0$^\circ$ (aligned) and 13.5$^\circ$ (twisted) graphene/h-BN, and the electron-electron interaction strength $α_{ee}^*$ is extracted to be $α_{ee}^*\approx0.9\pm 0.1$, highlighting the important role of electron-electron interaction. Our results suggest graphene/h-BN as an ideal platform for investigating strong electron-electron interaction with weak dielectric screening, and lays fundamental physics for gate-tunable nano-electronics and nano-plasmonics.

cond-mat.mes-hall↗

Self-energy dynamics and mode-specific phonon threshold effect in a Kekulé-ordered graphene

Electron-phonon interaction and related self-energy are fundamental to both the equilibrium properties and non-equilibrium relaxation dynamics of solids. Although electron-phonon interaction has been suggested by various time-resolved measurements to be important for the relaxation dynamics of graphene, the lack of energy- and momentum-resolved self-energy dynamics prohibits direct identification of the role of specific phonon modes in the relaxation dynamics. Here by performing time- and angle-resolved photoemission spectroscopy measurements on a Kekulé-ordered graphene with folded Dirac cones at the $Γ$ point, we have succeeded in resolving the self-energy effect induced by coupling of electrons to two phonons at $Ω_1$ = 177 meV and $Ω_2$ = 54 meV and revealing its dynamical change in the time domain. Moreover, these strongly coupled phonons define energy thresholds, which separate the hierarchical relaxation dynamics from ultrafast, fast to slow, thereby providing direct experimental evidence for the dominant role of mode-specific phonons in the relaxation dynamics

cond-mat.mes-hall↗

Experimental evidence of chiral symmetry breaking in Kekulé-ordered graphene

The low-energy excitations of graphene are relativistic massless Dirac fermions with opposite chiralities at valleys K and K'. Breaking the chiral symmetry could lead to gap opening in analogy to dynamical mass generation in particle physics. Here we report direct experimental evidences of chiral symmetry breaking (CSB) from both microscopic and spectroscopic measurements in a Li-intercalated graphene. The CSB is evidenced by gap opening at the Dirac point, Kekulé-O type modulation, and chirality mixing near the gap edge. Our work opens up opportunities for investigating CSB related physics in a Kekulé-ordered graphene.

cond-mat.mes-hall↗

Electronic structure of molecular beam epitaxy grown 1T$^\prime$-MoTe$_2$ film and strain effect

Atomically thin transition metal dichalcogenide films with distorted trigonal (1T$^\prime$) phase have been predicted to be candidates for realizing quantum spin Hall effect. Growth of 1T$^\prime$ film and experimental investigation of its electronic structure are critical. Here we report the electronic structure of 1T$^\prime$-MoTe$_2$ films grown by molecular beam epitaxy (MBE). Growth of the 1T$^\prime$-MoTe$_2$ film depends critically on the substrate temperature, and successful growth of the film is indicated by streaky stripes in the reflection high energy electron diffraction and sharp diffraction spots in low energy electron diffraction. Angle-resolved photoemission spectroscopy measurements reveal a metallic behavior in the as-grown film with an overlap between the conduction and valence bands. First principles calculation suggests that a suitable tensile strain along the a-axis direction is needed to induce a gap to make it an insulator. Our work not only reports the electronic structure of MBE grown 1T$^\prime$-MoTe$_2$ films, but also provides insights for strain engineering to make it possible for quantum spin Hall effect.

cond-mat.mtrl-sci↗

Extremely Large Magnetoresistance and Electronic Structure of TmSb

We report the magneto-transport properties and the electronic structure of TmSb. TmSb exhibits extremely large transverse magnetoresistance and Shubnikov-de Haas (SdH) oscillation at low temperature and high magnetic field. Interestingly, the split of Fermi surfaces induced by the nonsymmetric spin-orbit interaction has been observed from SdH oscillation. The analysis of the angle-dependent SdH oscillation illustrates the contribution of each Fermi surface to the conductivity. The electronic structure revealed by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations demonstrates a gap at $X$ point and the absence of band inversion. Combined with the trivial Berry phase extracted from SdH oscillation and the nearly equal concentrations of electron and hole from Hall measurements, it is suggested that TmSb is a topologically trivial semimetal and the observed XMR originates from the electron-hole compensation and high mobility.

cond-mat.mtrl-sci↗