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Hoon Hahn Yoon

Publications and source records attributed to Hoon Hahn Yoon.

3 recordsLinked to original sources

Advances in Josephson Junction Materials and Processes Toward Practical Quantum Computing

The Josephson junction is the fundamental nonlinear building block of superconducting quantum technologies. Its macroscopic quantum tunneling physics underpins superconducting quantum computing, sensing, and communication, but scaling these platforms to utility-scale architectures places increasingly stringent demands on junction materials, interfaces, and fabrication. In quantum computing, these demands include high reproducibility, low dissipation, tunability, compact device footprint, and resilience to noise and defects. This review surveys how advances in materials science, device characterization, and nanofabrication are addressing these challenges and redefining the figures of merit for next-generation Josephson junctions. We also examine the evolution of fabrication strategies, from conventional multi-angle evaporation to foundry-compatible superconducting processes and the integration of emerging junction materials. Progress along these directions will determine how rapidly Josephson junctions move from laboratory-scale components to the foundation of industrial-scale quantum processors.

quant-ph

Broadband miniaturized spectrometers with a van der Waals tunnel diode

Miniaturized spectrometers are of immense interest for various on-chip and implantable photonic and optoelectronic applications. State-of-the-art conventional spectrometer designs rely heavily on bulky dispersive components (such as gratings, photodetector arrays, and interferometric optics) to capture different input spectral components that increase their integration complexity. Here, we report a high-performance broadband spectrometer based on a simple and compact van der Waals heterostructure diode, leveraging a careful selection of active van der Waals materials -- molybdenum disulfide and black phosphorus, their electrically tunable photoresponse, and advanced computational algorithms for spectral reconstruction. We achieve remarkably high peak wavelength accuracy of ~2 nanometers, and broad operation bandwidth spanning from ~500 to 1600 nanometers in a device with a ~30x20 μm2 footprint. This diode-based spectrometer scheme with broadband operation offers an attractive pathway for various applications, such as sensing, surveillance and spectral imaging.

physics.optics

Negative Fermi-level Pinning Effect of Metal/n-GaAs(001) Junction with Graphene Interlayer

It is demonstrated that the electric dipole layer due to the overlapping of electron wavefunctions at metal/graphene contact results in negative Fermi-level pinning effect on the region of GaAs surface with low interface-trap density in metal/graphene/n-GaAs(001) junction. The graphene interlayer takes a role of diffusion barrier preventing the atomic intermixing at interface and preserving the low interface-trap density region. The negative Fermi-level pinning effect is supported by the Schottky barrier decreasing as metal work-function increasing. Our work shows that the graphene interlayer can invert the effective work-function of metal between $high$ and $low$, making it possible to form both Schottky and Ohmic-like contacts with identical (particularly $high$ work-function) metal electrodes on a semiconductor substrate possessing low surface-state density.

cond-mat.mes-hall