arXiv subjects

Hosein Cheraghchi

Publications and source records attributed to Hosein Cheraghchi.

24 records · Page 2Linked to original sources

arXiv2012

Spin polarization and magnetoresistance through a ferromagnetic barrier in bilayer graphene

We study spin dependent transport through a magnetic bilayer graphene nanojunction configured as two dimensional normal/ferromagnetic/normal structure where the gate-voltage is applied on the layers of ferromagnetic graphene. Based on the fourband Hamiltonian, conductance is calculated by using Landauer Butikker formula at zero temperature. For parallel configuration of the ferromagnetic layers of bilayer graphene, the energy band structure is metallic and spin polarization reaches to its maximum value close to the resonant states, while for antiparallel configuration, the nanojunction behaves as a semiconductor and there is no spin filtering. As a result, a huge magnetoresistance is achievable by altering the configurations of ferromagnetic graphene especially around the band gap.

cond-mat.mes-hall↗

arXiv2010

A Gate-Induced Switch in Zigzag Graphene Naoribbons and Charging Effects

Using non-equilibrium Green's function formalism, we investigate nonlinear transport and charging effects of gated graphene nanoribbons (GNRs) with even number of zigzag chains. We find a negative differential resistance (NDR) over a wide range of gate voltages with on/off ratio $\sim 10^6$ for narrow enough ribbons. This NDR originates from the parity selection rule and also prohibition of transport between discontinues energy bands. Since the external field is well screened close to the contacts, the NDR is robust against the electrostatic potential. However, for voltages higher than the NDR threshold, due to charge transfer through the edges of ZGNR, screening is reduced such that the external potential can penetrate inside the ribbon giving rise to smaller values of off current. Furthermore, on/off ratio of the current depends on the aspect ratio of the length/width and also edge impurity. Moreover, on/off ratio displays a power law behavior as a function of ribbon length.

cond-mat.mes-hall↗

arXiv2010

Metallic phase of disordered graphene superlattices with long-range correlations

Using the transfer matrix method, we study the conductance of the chiral particles through a monolayer graphene superlattice with long-range correlated disorder distributed on the potential of the barriers. Even though the transmission of the particles through graphene superlattice with white noise potentials is suppressed, the transmission is revived in a wide range of angles when the potential heights are long-range correlated with a power spectrum $S(k)\sim1/k^β$. As a result, the conductance increases with increasing the correlation exponent values gives rise a metallic phase. We obtain a phase transition diagram in which a critical correlation exponent depends strongly on disorder strength and slightly on the energy of the incident particles. The phase transition, on the other hand, appears in all ranges of the energy from propagating to evanescent mode regimes.

cond-mat.dis-nn↗

arXiv2008

Negative differential resistance in molecular junctions: application to graphene ribbon junctions

Using self-consistent calculations based on Non-Equilibrium Green's Function (NEGF) formalism, the origin of negative differential resistance (NDR) in molecular junctions and quantum wires is investigated. Coupling of the molecule to electrodes becomes asymmetric at high bias due to asymmetry between its highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels. This causes appearance of an asymmetric potential profile due to a depletion of charge and reduction of screening near the source electrode. With increasing bias, this sharp potential drop leads to an enhanced localization of the HOMO and LUMO states in different parts of the system. The reduction in overlap, caused by localization, results in a significant reduction in the transmission coefficient and current with increasing bias. An atomic chain connected to two Graphene ribbons was investigated to illustrate these effects. For a chain substituting a molecule, an even-odd effect is also observed in the NDR characteristics.

cond-mat.mes-hall↗

arXiv2006

Statistical properties of a localization-delocalization transition induced by correlated disorder

The exact probability distributions of the resistance, the conductance and the transmission are calculated for the one-dimensional Anderson model with long-range correlated off-diagonal disorder at E=0. It is proved that despite of the Anderson transition in 3D, the functional form of the resistance (and its related variables) distribution function does not change when there exists a Metal-Insulator transition induced by correlation between disorders. Furthermore, we derive analytically all statistical moments of the resistance, the transmission and the Lyapunov Exponent. The growth rate of the average and typical resistance decreases when the Hurst exponent $H$ tends to its critical value ($H_{cr}=1/2$) from the insulating regime. In the metallic regime $H\geq1/2$, the distributions become independent of size. Therefore, the resistance and the transmission fluctuations do not diverge with system size in the thermodynamic limit.

cond-mat.dis-nn↗

arXiv2006

Scaling properties of one-dimensional off-diagonal disorder

Validity of the single parameter scaling (SPS) in one dimensional Anderson model with purely off-diagonal disorder is being studied. It is shown that the localized region with standard symmetry is divided into two regimes: SPS and non-SPS. Scaling relations of the Lyapunov Exponent are proposed for these two regimes. In the non-SPS regime, in additional to the localization length, there exists a new length scale which is related to the integrated density of states. A physical interpretation of the new length is the cross-over length which separates regions with chiral symmetry from those that have standard symmetry.

cond-mat.dis-nn↗