arXiv subjects

Hosub Jin

Publications and source records attributed to Hosub Jin.

26 records · Page 2Linked to original sources

arXiv2014

Phonon-assisted optical excitation in the narrow bandgap Mott insulator Sr3Ir2O7

We examined the temperature (T) evolution of the optical conductivity spectra of Sr$_3$Ir$_2$O$_7$ over a wide range of 10-400 K. The system was barely insulating, exhibiting a small indirect bandgap of $\sim$0.1 eV. The low-energy features of the optical d-d excitation (${\hbar}ω$ $<$ 0.3 eV) evolved drastically, whereas such evolution was not observed for the O K-edge X-ray absorption spectra. This suggests that the T evolution in optical spectra is not caused by a change in the bare (undressed) electronic structure, but instead, presumably originates from an abundance of phonon-assisted indirect excitations. Our results showed that the low-energy excitations were dominated by phonon-absorption processes which involve, in particular, the optical phonons. This implies that phonon-assisted processes significantly facilitate the charge dynamics in barely insulating Sr$_3$Ir$_2$O$_7$.

cond-mat.str-el↗

arXiv2012

Topological Quantum Phase Transition in 5$d$ Transition Metal Oxide Na$_2$IrO$_3$

We predict a quantum phase transition from normal to topological insulators in the 5$d$ transition metal oxide Na$_2$IrO$_3$, where the transition can be driven by the change of the long-range hopping and trigonal crystal field terms. From the first-principles-derived tight-binding Hamiltonian we determine the phase boundary through the parity analysis. In addition, our first-principles calculations for Na$_2$IrO$_3$ model structures show that the interlayer distance can be an important parameter for the existence of a three-dimensional strong topological insulator phase. Na$_2$IrO$_3$ is suggested to be a candidate material which can have both a nontrivial topology of bands and strong electron correlations.

cond-mat.mtrl-sci↗

arXiv2010

New Candidates for Topological Insulators : Pb-based chalcogenide series

Here, we theoretically predict that the series of Pb-based layered chalcogenides, Pb$_n$Bi$_2$Se$_{n+3}$ and Pb$_n$Sb$_2$Te$_{n+3}$, are possible new candidates for topological insulators. As $n$ increases, the phase transition from a topological insulator to a band insulator is found to occur between $n=2$ and 3 for both series. Significantly, among the new topological insulators, we found a bulk band gap of 0.40eV in PbBi$_2$Se$_4$ which is one of the largest gap topological insulators, and that Pb$_2$Sb$_2$Te$_5$ is located in the immediate vicinity of the topological phase boundary, making its topological phase easily tunable by changing external parameters such as lattice constants. Due to the three-dimensional Dirac cone at the phase boundary, massless Dirac fermions also may be easily accessible in Pb$_2$Sb$_2$Te$_5$.

cond-mat.mtrl-sci↗

arXiv2010

Dirac cone engineering in Bi$_2$Se$_3$ thin films

Topological insulators are distinguished from normal insulators by their bulk insulating gap and odd number of surface states connecting the inverted conduction and valence bands and showing Dirac cones at the time-reversal invariant points in the Brillouin zone. Bi-based three-dimensional strong topological insulator materials, Bi$_2$Se$_3$ and Bi$_2$Te$_2$, are known as high temperature topological insulators for their relatively large bulk gap and have one simple Dirac cone at the $Γ$ point. In spite of their clear surface state Dirac cone features, the Dirac point known as a Kramers point and the topological transport regime is located below the bulk valence band maximum. As a result of a non-isolated Dirac point, the topological transport regime can not be acquired and there possibly exist scattering channels between surface and bulk states as well. In this article we show that an ideal and isolated Dirac cone is realized in a slab geometry made of Bi$_2$Se$_3$ with appropriate substitutions of surface Se atoms. In addition to Dirac cone engineering by surface atom substitutions, we also investigate Bi$_2$Se$_3$ thin films in terms of thickness and magnetic substitutions, which can be linked to applications of spintronics devices.

cond-mat.mtrl-sci↗

arXiv2009

Optical spectroscopic investigation on the temperature-dependent electronic structure evolution of the Jeff,1/2 Mott insulator Sr2IrO4

We investigated the temperature-dependent evolution of the electronic structure of the Jeff,1/2 Mott insulator Sr2IrO4 using optical spectroscopy. The optical conductivity spectra $σ(ω)$ of this compound has recently been found to exhibit two d-d transitions associated with the transition between the Jeff,1/2 and Jeff,3/2 bands due to the cooperation of the electron correlation and spin-orbit coupling. As the temperature increases, the two peaks show significant changes resulting in a decrease in the Mott gap. The experimental observations are compared with the results of first-principles calculation in consideration of increasing bandwidth. We discuss the effect of the temperature change on the electronic structure of Sr2IrO4 in terms of local lattice distortion, excitonic effect, electron-phonon coupling, and magnetic ordering.

cond-mat.str-el↗

arXiv2009

Spin-Orbit Integrated Ground State and Magnetic Anisotropy in Sr$_2$IrO$_4$

We present a microscopic model for the anisotropic exchange interactions in Sr$_{2}$IrO$_{4}$. A direct construction of Wannier functions from first-principles calculations proves the $j_{\mathrm{eff}}$=1/2 character of the spin-orbit integrated states at the Fermi level. An effective $j_{\mathrm{eff}}$-spin Hamiltonian explains the observed weak ferromagnetism and anisotropy of antiferromagnetically ordered magnetic state, which arise naturally from the $j_{\mathrm{eff}}$=1/2 state with a rotation of IrO$_{6}$ octahedra. It is suggested that Sr$_{2}$IrO$_{4}$ is a unique class of materials with effective exchange interactions in the spin-orbital Hilbert space.

cond-mat.str-el↗

arXiv2009

Mott Insulating Ground State and its Proximity to Spin-Orbit Insulators in Na$_{2}$IrO$_{3}$

We present an anti-ferromagnetically ordered ground state of Na$_{2}$IrO$_{3}$ based on density-functional-theory calculations including both spin-orbit coupling and on-site Coulomb interaction $U$. We show that the splitting of $e_{g}'$ doublet states by the strong spin-orbit coupling is mainly responsible for the intriguing nature of its insulating gap and magnetic ground state. Due to its proximity to the spin-orbit insulator phase, the magnetic ordering as obtained with finite $U$ is found to exhibit a strong in-plane anisotropy. The phase diagram of Na$_{2}$IrO$_{3}$ suggests a possible interplay between spin-orbit insulator and Mott anti-ferromagnetic insulator phases.

cond-mat.str-el↗

arXiv2008

Novel Jeff = 1/2 Mott State Induced by Relativistic Spin-Orbit Coupling in Sr2IrO4

We investigated electronic structure of 5d transition-metal oxide Sr2IrO4 using angle-resolved photoemission, optical conductivity, and x-ray absorption measurements and first-principles band calculations. The system was found to be well described by novel effective total angular momentum Jeff states, in which relativistic spin-orbit (SO) coupling is fully taken into account under a large crystal field. Despite of delocalized Ir 5d states, the Jeff-states form so narrow bands that even a small correlation energy leads to the Jeff = 1/2 Mott ground state with unique electronic and magnetic behaviors, suggesting a new class of the Jeff quantum spin driven correlated-electron phenomena.

cond-mat.str-el↗