arXiv subjects

Houk Jang

Publications and source records attributed to Houk Jang.

12 recordsLinked to original sources

arXiv2026

Quasiparticle phono-conversion: filming carriers coalescing into excitons

Condensed matter physics is replete with phenomena involving high-energy free particles coalescing into low-energy bound few-particle states. While the cooling of the individual particles is well understood, the crucial step by which cold free carriers form a bound state remains elusive, involving complex energy and momentum relaxation pathways. Here, by combining ultrafast time- and momentum-resolved photoemission spectroscopy on a monolayer WSe$_2$ with the first-principles excitonic-Bloch equations, we resolve the conversion of initially free electrons and holes at the bandedges into bound excitons. With unprecedented energy resolution, we observe the transient \textit{coexistence} of free-carrier and excitonic bands, accompanied by a transfer of spectral weight between the two. We establish the phononic origin of exciton formation and ascribe this coexistence to a sequential relaxation cascade toward the lowest-energy excitonic states, wherein intermediate states remain weakly populated. The efficiency of this process is controlled by valley multiplicity, large-momentum phonon emission and spin-flip processes. By elucidating how bound states emerge from their elementary constituents, our results point to strategies for engineering exciton formation, with direct implications for optical materials and devices that operate with excitons or free carriers.

cond-mat.mtrl-sci↗

arXiv2026

Proximity-induced charge transfer, strain and magnetic exchange in graphene/CrSBr heterostructure

Stacking van der Waals materials provides a powerful route to engineer emergent electronic and magnetic behaviors through proximity-driven interactions. The graphene/CrSBr heterostructure has emerged as a compelling platform in this frontier, exhibiting exotic macroscopic responses-- including uniaxial surface-plasmon-polariton propagation and an unconventional quantum Hall effect-- indicative of strong interfacial electronic and magnetic coupling. However, a microscopic electronic landscape governing these phenomena has remained elusive. Here, we provide a comprehensive spectroscopic characterization of the graphene/CrSBr interface using a combination of angle-resolved photoemission spectroscopy (ARPES), low-energy electron microscopy (LEEM), and density functional theory. We resolve a massive redistribution of interfacial charge that concurrently hole dopes graphene and populates the quasi-one-dimensional spin-polarized conduction band of CrSBr, resulting insulator-to-metal transition in the interfacial CrSBr layer. Furthermore, electronic structure of CrSBr exhibits strong momentum-dependent renormalization distinct from conventional charge doping, and theoretical modeling supported by Raman spectroscopy points to additional interfacial compressive strain. In addition, ARPES reveals a splitting-like feature in the graphene Dirac cone consistent with spin degeneracy lifting, providing possible evidence of magnetic proximity coupling. These findings provide crucial microscopic insight into the system's optical and transport responses and establish graphene/CrSBr as a versatile platform for charge-transfer control, strain-driven band engineering, magnetic-proximity coupling, and directionally confined excitations for next-generation spintronic and nanophotonic devices.

cond-mat.str-el↗

arXiv2026

Equilibrium Stabilization of a Hidden Phase Like Metallic State in 1T-TaS2

Electronic phases that lie outside the equilibrium ground state offer a route to explore competing configurations in correlated materials. In 1T-TaS2, ultrafast excitation accesses a metallic hidden phase that is distinct from the commensurate insulating ground state. Here we use angle-resolved photoemission spectroscopy to show that an equivalent electronic configuration is stabilized in exfoliated intermediate-thickness 1T-TaS2 flakes, where it persists up to room temperature before evolving through a different sequence of electronic transitions. This equilibrium hidden-phase-like state hosts a metallic band with finite Fermi-level spectral weight while retaining the characteristic hybridization gaps associated with the star-of-David band folding. These results establish a platform for controlling competing electronic states in layered materials, with implications for both quantum science and phase change technologies.

cond-mat.str-el↗

arXiv2025

Wigner polarons reveal Wigner crystal dynamics in a monolayer semiconductor

Wigner crystals, lattices made purely of electrons, are a quintessential paradigm of studying correlation-driven quantum phase transitions. Despite decades of research, the internal dynamics of Wigner crystals has remained extremely challenging to access, with most experiments probing only static order or collective motion. Here, we establish monolayer WSe2 as a new materials platform to host zero-field Wigner crystals and then demonstrate that exciton spectroscopy provides a direct means to probe both static and dynamic properties of these electron lattices. We uncover striking optical resonances that we identify as Wigner polarons, quasiparticles formed when the electron lattice is locally distorted by exciton-Wigner crystal coupling. We further achieve all-optical control of spins in the Wigner crystal, directly probing valley-dependent Wigner polaron scattering well above the magnetic ordering temperature and in the absence of any external magnetic field. Finally, we demonstrate optical melting of the Wigner crystal and observe intriguingly different responses of the umklapp (static) and Wigner polaron (dynamic) resonances to optical excitation. Our results open up exciting new avenues for elucidating electron dynamics and achieving ultrafast optical control of interaction-driven quantum phase transitions in strongly correlated electron systems.

cond-mat.mes-hall↗

arXiv2025

Probing Quantum Anomalous Hall States in Twisted Bilayer WSe2 via Attractive Polaron Spectroscopy

Moir\'e superlattices in semiconductors exhibit a rich variety of interaction-induced topological states, including quantum anomalous Hall (QAH) effects. A recent study hinted that twisted WSe2 homobilayer (tWSe2) could host a QAH state but lacked direct evidence of ferromagnetism, a key hallmark of this phase. Here, we report the first direct evidence of QAH states in tWSe2 with spontaneous ferromagnetism. Specifically, we employ polarization-resolved attractive polaron spectroscopy on a dual-gated, 2 degree tWSe2 and observe direct signatures of spontaneous time-reversal symmetry breaking at hole filling \nu = 1. Together with a Chern number measurement via Streda formula analysis, we identify this magnetized state as a topological state, characterized by C = 1. Furthermore, we demonstrate that these topological and magnetic properties are tunable via a finite displacement field, between a QAH ferromagnetic state and an antiferromagnetic state. Our findings position tWSe2 as a highly versatile, stable, and optically addressable platform for investigating topological order and strong correlations in two-dimensional landscapes.

cond-mat.str-el↗

arXiv2025

Quantum confining excitons with electrostatic moir\'e superlattice

Quantum confining excitons has been a persistent challenge in the pursuit of strong exciton interactions and quantum light generation. Unlike electrons, which can be readily controlled via electric fields, imposing strong nanoscale potentials on excitons to enable quantum confinement has proven challenging. In this study, we utilize piezoresponse force microscopy to image the domain structures of twisted hexagonal boron nitride (hBN), revealing evidence of strong in-plane electric fields at the domain boundaries. By placing a monolayer MoSe2 only one to two nanometers away from the twisted hBN interface, we observe energy splitting of neutral excitons and Fermi polarons by several millielectronvolts at the moir\'e domain boundaries. By directly correlating local structural and optical properties, we attribute such observations to excitons confined in a nanoscale one-dimensional electrostatic potential created by the strong in-plane electric fields at the moir\'e domain boundaries. Intriguingly, this 1D quantum confinement results in pronounced polarization anisotropy in the excitons' reflection and emission, persistent to temperatures as high as ~80 Kelvins. These findings open new avenues for exploring and controlling strongly interacting excitons for classical and quantum optoelectronics.

cond-mat.mes-hall↗

arXiv2024

Sub-wavelength optical lattice in 2D materials

Recently, light-matter interaction has been vastly expanded as a control tool for inducing and enhancing many emergent non-equilibrium phenomena. However, conventional schemes for exploring such light-induced phenomena rely on uniform and diffraction-limited free-space optics, which limits the spatial resolution and the efficiency of light-matter interaction. Here, we overcome these challenges using metasurface plasmon polaritons (MPPs) to form a sub-wavelength optical lattice. Specifically, we report a ``non-local" pump-probe scheme where MPPs are excited to induce a spatially modulated AC Stark shift for excitons in a monolayer of MoSe$_2$, several microns away from the illumination spot. Remarkably, we identify nearly two orders of magnitude reduction for the required modulation power compared to the free-space optical illumination counterpart. Moreover, we demonstrate a broadening of the excitons' linewidth as a robust signature of MPP-induced periodic sub-diffraction modulation. Our results will allow exploring power-efficient light-induced lattice phenomena below the diffraction limit in active chip-compatible MPP architectures.

cond-mat.mes-hall↗

arXiv2023

Electrical control and transport of tightly bound interlayer excitons in a MoSe2/hBN/MoSe2 heterostructure

Controlling interlayer excitons in van der Waals heterostructures holds promise for exploring Bose-Einstein condensates and developing novel optoelectronic applications, such as excitonic integrated circuits. Despite intensive studies, several key fundamental properties of interlayer excitons, such as their binding energies and interactions with charges, remain not well understood. Here we report the formation of momentum-direct interlayer excitons in a high-quality MoSe2/hBN/MoSe2 heterostructure under an electric field, characterized by bright photoluminescence (PL) emission with high quantum yield and a narrow linewidth of less than 4 meV. These interlayer excitons show electrically tunable emission energy spanning ~180 meV through the Stark effect, and exhibit a sizable binding energy of ~81 meV in the intrinsic regime, along with trion binding energies of a few millielectronvolts. Remarkably, we demonstrate the long-range transport of interlayer excitons with a characteristic diffusion length exceeding ten micrometers, which can be attributed, in part, to their dipolar repulsive interactions. Spatially and polarization-resolved spectroscopic studies reveal rich exciton physics in the system, such as valley polarization, local trapping, and the possible existence of dark interlayer excitons. The formation and transport of tightly bound interlayer excitons with narrow linewidth, coupled with the ability to electrically manipulate their properties, open exciting new avenues for exploring quantum many-body physics, including excitonic condensate and superfluidity, and for developing novel optoelectronic devices, such as exciton and photon routers.

cond-mat.mes-hall↗

arXiv2023

Chiral Flat-Band Optical Cavity with Atomically Thin Mirrors

A fundamental requirement for photonic technologies is the ability to control the confinement and propagation of light. Widely utilized platforms include two-dimensional (2D) optical microcavities in which electromagnetic waves are confined between either metallic or distributed Bragg reflectors. Recently, transition metal dichalcogenides hosting tightly bound excitons with high optical quality have emerged as promising atomically thin mirrors. In this work, we propose and experimentally demonstrate a sub-wavelength 2D nano-cavity using two atomically thin mirrors with degenerate resonances. Angle-resolved measurements show a flat band, which sets this system apart from conventional photonic cavities. Remarkably, we demonstrate how the excitonic nature of the mirrors enables the formation of chiral and tunable optical modes upon the application of an external magnetic field. Moreover, we show the electrical tunability of the confined mode. Our work demonstrates a mechanism for confining light with high-quality excitonic materials, opening perspectives for spin-photon interfaces, and chiral cavity electrodynamics.

physics.optics↗

arXiv2023

Giant optical nonlinearity of Fermi polarons in atomically thin semiconductors

Realizing strong nonlinear optical responses is a long-standing goal of both fundamental and technological importance. Recently significant efforts have focused on exploring excitons in solids as a pathway to achieving nonlinearities even down to few-photon levels. However, a crucial tradeoff arises as strong light-matter interactions require large oscillator strength and short radiative lifetime of the excitons, which limits their interaction strength and nonlinearity. Here we experimentally demonstrate strong nonlinear optical responses by exploiting the coupling between excitons and carriers in an atomically thin semiconductor of trilayer tungsten diselenide. By controlling the electric field and electrostatic doping of the trilayer, we observe the hybridization between intralayer and interlayer excitons along with the formation of Fermi polarons due to the interactions between excitons and free carriers. We find substantial optical nonlinearity can be achieved under both continuous wave and pulsed laser excitation, where the resonance of the hole-doped Fermi polaron blueshifts by as much as ~10 meV. Intriguingly, we observe a remarkable asymmetry in the optical nonlinearity between electron and hole doping, which is tunable by the applied electric field. We attribute these features to the strong interactions between excitons and free charges with optically induced valley polarization. Our results establish that atomically thin heterostructures are a highly versatile platform for engineering nonlinear optical response with applications to classical and quantum optoelectronics, and open avenues for exploring many-body physics in hybrid Fermionic-Bosonic systems.

cond-mat.mes-hall↗

arXiv2023

Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material

High light absorption (~15%) and strong photoluminescence (PL) emission in monolayer (1L) transition metal dichalcogenide (TMD) make it an ideal candidate for optoelectronic applications. Competing interlayer charge (CT) and energy transfer (ET) processes control the photocarrier relaxation pathways in TMD heterostructures (HSs). In TMDs, long-distance ET can survive up to several tens of nm, unlike the CT process. Our experiment shows that an efficient ET occurs from the 1Ls WSe2-to-MoS2 with an interlayer hBN, due to the resonant overlapping of the high-lying excitonic states between the two TMDs, resulting in enhanced HS MoS2 PL emission. This type of unconventional ET from the lower-to-higher optical bandgap material is not typical in the TMD HSs. With increasing temperature, the ET process becomes weaker due to the increased electron-phonon scattering, destroying the enhanced MoS2 emission. Our work provides new insight into the long-distance ET process and its effect on the photocarrier relaxation pathways.

cond-mat.mtrl-sci↗

arXiv2009

Wafer-scale synthesis and transfer of graphene films

We developed means to produce wafer scale, high-quality graphene films as large as 3 inch wafer size on Ni and Cu films under ambient-pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We also demonstrated the applications of the large-area graphene films for the batch fabrication of field-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1,100 cm2/Vs and 550 cm2/Vs at drain bias of -0.75V, respectively. The piezo-resistance gauge factor of strain sensor was ~6.1. These methods represent a significant step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.

cond-mat.mtrl-sci↗