arXiv subjects

Hsiang Lee

Publications and source records attributed to Hsiang Lee.

5 recordsLinked to original sources

arXiv2026

EuIn2Sb2: epitaxially stabilized axion insulator candidate with strong spin-orbit coupling

Eu triangular lattice layer compounds described by the general formula EuA2X2 have attracted growing attention due to a wide range of layered crystal structures and corresponding magnetic topological phases, arising from the coexistence of large Eu magnetic moments and energetically inverted A and X bands. Among the EuA2X2 family, EuIn2Sb2 has been predicted to host robust axion insulator and higher-order topological insulator states by stronger spin-orbit coupling but has not been experimentally realized, including the structural identification. Here we report the epitaxial stabilization of EuIn2Sb2 by adopting the molecular beam epitaxy technique. Structural characterization reveals that EuIn2Sb2 films are based on a unique In-on-In stacking, forming a new trilayer structure distinct from previously predicted structures in the EuA2X2 family. In addition to the in-plane antiferromagnetic ordering at TN=10.5K, the stronger spin-orbit coupling and enhanced In-In hybridization in EuIn2Sb2 make it an ideal candidate of axion insulator and higher-order topological insulator phases. These results establish EuIn2Sb2 as a new member of the EuA2X2 family and offer an advanced platform for exploring these magnetic topological phases.

cond-mat.mtrl-sci↗

arXiv2026

Magnetic structure of EuZn$_2$Sb$_2$ single-crystal thin-film

Magnetic topological materials are a class of compounds which can host massless electrons controlled by the magnetic order. One such compound is EuZn$_2$Sb$_2$, which has recently garnered interest due to its strong interplay between the Eu magnetism and charge carriers. However the topology of the electronic band structure, which depends on the ground state magnetic configuration of the europium sublattice, has not been determined. Based on our \textit{ab-initio} calculations, we find that an in-plane and out-of-plane \textit{A}-type antiferromagnetic (AFM) order generates a topological crystalline insulator and Dirac semimetal respectively, whereas a ferromagnetic (FM) order stabilizes a Weyl semimetal. Our resonant x-ray elastic scattering measurements of single-crystal thin film EuZn$_2$Sb$_2$ reveal both a sharp magnetic peak at $\textit{\textbf{Q}}$=$(0,0,\frac{1}{2})$ and broad $\textit{\textbf{Q}}$=$(0,0,1)$ below $T_{\mathrm{N}}=12.9$\,K, which is associated with an \textit{A}-type AFM and FM order, respectively. Our measurements indicate that the FM and AFM layers are spatially separated along the crystal $c$ axis, with the former limited to the top three atomic layers. We propose that EuZn$_2$Sb$_2$ behaves as a Weyl semimetal in the surface FM layers, and as a topological crystalline insulator in the lower AFM layers.

cond-mat.str-el↗

arXiv2025

Magneto-cubic and magneto-linear dependence observed in an in-plane anomalous Hall magnet

The Hall effect, particularly that arising from in-plane magnetic field, has recently emerged as a sensitive probe of quantum geometric properties in solids. Especially in trigonal systems, in-plane anomalous Hall effect (AHE) can be explicitly induced by nontrivial off-diagonal coupling between the magnetic field and the Hall vector on the principal plane. Here we elucidate multipolar dependence of the off-diagonal coupling in the in-plane AHE, by systematically measuring on the (001) principal plane of trigonal antiferromagnet EuCd2Sb2 thin films for each magnetic phase. Around zero field, magneto-cubic dependence of anomalous Hall resistivity is clearly observed not only in the paramagnetic phase but also even in the antiferromagnetic phase. An off-diagonal component of the octupolar tensor also exhibits unconventional decay above the magnetic ordering temperature, roughly depending on the inverse temperature to the third power. In the forced ferromagnetic phase, on the other hand, magneto-linear dependence dominantly appears and notably persists up to very high fields. Our findings clarify key aspects of the off-diagonal coupling in the in-plane AHE, paving the way for its future investigations and potential applications beyond conventional expectations about the Hall effect.

cond-mat.str-el↗

arXiv2025

Stark difference in the in-plane anomalous Hall response in Zintl compounds EuA2Sb2 (A = Zn, Cd) thin films

Recent observation of the in-plane anomalous Hall effect in magnetic Weyl semimetal EuCd2Sb2 has drawn attention to out-of-plane orbital magnetization induced by an in-plane field component. Here we study EuZn2Sb2, a sister compound of EuCd2Sb2, to demonstrate sensitive changes of the in-plane anomalous Hall effect on the band modulation. The Hall resistivity measured with rotating the magnetic field within the (001) principal plane of EuZn2Sb2 films exhibits a clear three-fold component corresponding to the in-plane anomalous Hall effect, which is distinct from the two-fold component of the planar Hall effect. The in-plane anomalous Hall effect of EuZn2Sb2 is highly contrasting to EuCd2Sb2, especially in terms of its opposite sign and field dependence, which can be explained by model calculations with different band inversion parameters. Our results pave the way for systematically controlling the in-plane anomalous Hall effect and orbital magnetization through elaborate band engineering.

cond-mat.mtrl-sci↗

arXiv2025

Anomalous Hall effect in Dirac semimetal probed by in-plane magnetic field

Intrinsic anomalous Hall effect (AHE) formulated by geometric properties of Bloch wavefunctions is a ubiquitous transport phenomenon not limited to magnetic systems but also allowed in non-magnetic ones under an external field breaking time-reversal symmetry. On the other hand, detection of field-induced AHE is practically challenging because the band modulation through the Zeeman and spin-orbit couplings is typically small compared to other contributions as induced by the Lorentz force. Here, we demonstrate on Dirac semimetal Cd$_3$As$_2$ films that the field-induced AHE in non-magnetic systems can be quantitatively probed by applying and rotating the magnetic field within the Hall deflection plane. Measurements on the Cd$_3$As$_2$ (112) plane reveal that AHE emerges as a clear three-fold symmetric component for the in-plane field rotation. This intrinsic response becomes more pronounced in ultralow-electron-density films where significant variations in the geometric properties are expected under the magnetic field. Our findings open new opportunities in the research of Hall responses manifested as orbital magnetization in non-magnetic systems.

cond-mat.mtrl-sci↗