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Hsin-An Chen

Publications and source records attributed to Hsin-An Chen.

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Unraveling atomic-resolution valence electron energy-loss spectroscopic imaging in a single-crystal CaNb2O6

Despite advancements in electron optics and spectrometer design over the past twenty years, atomic-resolution valence-electron energy-loss spectroscopy imaging remains challenging due to the delocalization of inelastic electron scattering. In this study, we used an energy-filtered spectrometer equipped with a hybrid-pixel direct electron detector and spherical aberration-corrected scanning transmission electron microscopy to analyze many-electron excitations and interband transitions in a single-crystal calcium niobate, CaNb2O6, with spatial resolution ranging from the nanometers to the atomic scale. In the low-loss region above the bandgap at about 3.8 eV, we observed volume plasmons, around 6 eV and 15 eV energy loss, as well as a mix of strongly correlated plasmons and excitons, known as plexcitons, at approximately 7.3 eV energy loss. Additionally, we employed an on-axis EELS setup for atomic-resolution zero-loss peak (ZLP) imaging and visualized energy- and atom-resolved images of plexcitons and VPs, which showed contrast reversal relative to high-angle annular dark-field images. To investigate elastic contrast preservation, we also analyzed the effect of the collection angle and minimized its influence to produce delocalized VP images. In fact, the ZLP and VEELS images obtained using the weak-beam setup demonstrate that, in both cases, the contrast resembles Z-contrast. Moreover, we found that [NbO6] octahedra directly contributed to the lateral maps of interband transitions in the range from 3.2 eV to 3.5 eV energy loss. These findings demonstrate that Cs-STEM-EELS, which examines atomic-scale contrast associated with low-energy losses, can be a powerful tool for visualizing the structure, bonding, and electronic properties of complex crystalline nanostructures, including individual atomic sites, interstitial sites, and point defects.

cond-mat.mtrl-sci

Blue photoluminescence from chemically derived graphene oxide

Fluorescent organic compounds are of significant importance to the development of low-cost opto-electronic devices. Blue fluorescence from aromatic or olefinic molecules and their derivatives is particularly important for display and lighting applications. Thin film deposition of low-molecular-weight fluorescent organic compounds typically requires costly vacuum evaporation systems. On the other hand, solution-processable polymeric counterparts generally luminesce at longer wavelengths due to larger delocalization in the chain. Blue light emission from solution-processed materials is therefore of unique technological significance. Here we report near-UV to blue photoluminescence (PL) from solution-processed graphene oxide (GO). The characteristics of the PL and its dependence on the reduction of GO indicates that it originates from the recombination of electron-hole (e-h) pairs localized within small sp2 carbon clusters embedded within an sp3 matrix. These results suggest that a sheet of graphene provides a parent structure on which fluorescent components can be chemically engineered without losing the macroscopic structural integrity. Our findings offer a unique route towards solution-processable opto-electronics devices with graphene.

cond-mat.mtrl-sci