Hsin-Wen Huang | Searcharxiv

arXiv2025

Dominant scattering mechanisms in the low/high electric field transport in cryogenic 2D confinement in Silicon (110) with high-$\kappa$ oxides

The performance of silicon nano-devices at cryogenic temperatures is critical for quantum qubit control circuits and space applications. Using multi-valley Monte Carlo simulations, we investigate electron transport in Si~(110) systems. At low electric fields, phonon absorption becomes negligible, and mobility is governed by competition between remote Coulomb scattering~(RCS) at low inversion charge density and surface roughness scattering~(SRS) at high density, leading to a mobility peak. High-$\kappa$ dielectrics such as $\mathrm{HfO_2}$ introduce remote phonon scattering~(RPS), which suppresses mobility. Under high electric fields, phonon emission dominates at 4~K, limiting velocity enhancement and resulting in limited current improvement

cond-mat.mes-hall↗

arXiv2024

Utilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors

Janus transition metal dichalcogenides (JTMDs) have attracted much attention because of their outstanding electronic and optical properties. The additional out-of-plane dipole in JTMDs can form n- and p-like Ohmic contacts, and this may be used in device applications such as pin diodes and photovoltaic cells. In this study, we exploit this property to design n- and p-type metal-oxide-semiconductor field effect transistors (MOSFETs). First, we use density-functional theory calculations to study the inherent dipole field strength in the trilayer JTMD MoSSe. The intrinsic dipole of MoSSe causes band bending at both the metal/MoSSe and MoSSe/metal interfaces, resulting in electron and hole accumulation to form n- and p-type Ohmic contact regions. We incorporate this property into a 2D finite-element-based Poisson-drift-diffusion solver to perform simulations, on the basis of which we design complementary MOSFETs. Our results demonstrate that JTMDs can be used to make n- and p-MOSFETs in the same layer without the need for any extra doping.

cond-mat.mtrl-sci↗