arXiv subjects

Hu-Jong Lee

Publications and source records attributed to Hu-Jong Lee.

At least 19 recordsLinked to original sources

arXiv2026

Ballistic transport in nanodevices based on single-crystalline Cu thin film

In ballistic transport, the movement of charged carriers is essentially unimpeded by scattering events. In this limit, microscopic parameters such as crystal momentum, spin and quantum phases are well conserved, allowing electrons to maintain their quantum coherence over longer distances. Nanoscale materials, like carbon nanotubes, graphene, and nanowires, exhibit ballistic transport. However, their scalability in devices is significantly limited. While deposited metal films offer excellent scalability for nanodevices, achieving ballistic transport in these films poses a challenge due to their short electronic mean free path. Here, we investigated the electronic transport in cross-geometry devices fabricated with 90 nm-thick copper films without grain boundaries. We observed ballistic transport in devices with channel width smaller than 150 nm below 85 K by measuring negative bend resistance. Our findings would open the opportunity for probing intrinsic quantum properties of Cu, and for realizing scalable low-loss signal transmission and high-quality interconnects in semiconductor devices.

cond-mat.mes-hall↗

arXiv2021

Twisted van der Waals Josephson junction based on high-Tc superconductor

Stacking two-dimensional van der Waals (vdW) materials rotated with respect to each other show versatility for the study of exotic quantum phenomena. Especially, anisotropic layered materials have great potential for such twistronics applications, providing high tunability. Here, we report anisotropic superconducting order parameters in twisted Bi2Sr2CaCu2O8+x (Bi-2212) vdW junctions with an atomically clean vdW interface, achieved using the microcleave-and-stack technique. The vdW Josephson junctions with twist angles of 0° and 90° showed the maximum Josephson coupling, which was comparable to that of intrinsic Josephson (IJ) junctions in the bulk crystal. As the twist angle approaches 45°, Josephson coupling is suppressed, and eventually disappears at 45°. The observed twist angle dependence of the Josephson coupling can be explained quantitatively by theoretical calculation with the d-wave superconducting order parameter of Bi-2212 and finite tunneling incoherence of the junction. Our results revealed the anisotropic nature of Bi-2212 and provided a novel fabrication technique for vdW-based twistronics platforms compatible with air-sensitive vdW materials.

cond-mat.supr-con↗

arXiv2021

Characterization of Shapiro steps in the presence of a 4π-periodic Josephson current

The Majorana zero-energy modes (MZMs) residing at the boundary of topological superconductors have attracted a great deal of interest recently, as they provide a platform to explore fundamental physics such as non-Abelian statistics, as well as fault-tolerant quantum computation. Period doubling of Shapiro steps in a Josephson junction under microwave irradiation has been regarded as strong evidence for the emergence of the MZMs at the junction edges. However, questions remain as to how the Shapiro steps respond to the presence of a 4π-periodic Josephson current. In this study, we investigated the characteristic features of Shapiro steps with respect to the ratio (α) of the 4π-periodic current to the topologically trivial 2π-periodic one, as well as the reduced microwave frequency (Ω) and McCumber parameter (β) of the junction. Our analysis reproduced Shapiro steps similar to those observed experimentally for specific parameter sets of α,Ω ({\lesssim 0.1}), and β ({gtrsim 1.0}). Full suppression of the first lobe of the n=1 step guarantees the presence of a 4π-periodic Josephson current.In addition, we discuss the range of Ω and β needed for full suppression of the first lobe of the {n=1} step, even for small α ({<0.1}). To observe "period-doubled Shapiro steps", even with a small α, the junction should have a large {I_c}{R_N} product and sufficiently large junction capacitance.

cond-mat.supr-con↗

arXiv2019

Evidence of Higher Order Topology in Multilayer WTe$_2$ from Josephson Coupling through Anisotropic Hinge States

The noncentrosymmetric Td-WTe$_2$, previously known as a type-II Weyl semimetal, is expected to have higher order topological phases with topologically protected, helical one-dimensional (1D) hinge states when their scarcely separated Weyl points get annihilated. However, the detection of these hinge states is difficult in the presence of the semimetallic behaviour of the bulk. Here, we spatially resolved the hinge states by analysing the magnetic field interference of supercurrent in Nb-WTe$_2$-Nb proximity Josephson junctions. The Josephson current along the a-axis of the WTe$_2$ crystal, but not along the b-axis, showed sharp enhancements at the edges of the junction; the amount of enhanced Josephson current was comparable to the upper limits of a single 1D conduction channel. Our experimental observations provide evidence of the higher order topological phase in WTe$_2$ and its corresponding anisotropic topological hinge states, in good agreement with theoretical calculations. Our work paves the way for hinge transport studies on topological semimetals in superconducting heterostructures, including their topological superconductivity.

cond-mat.mes-hall↗

arXiv2017

Short Ballistic Josephson Coupling in Planar Graphene Junctions with Inhomogeneous Carrier Doping

We report on short ballistic (SB) Josephson coupling in junctions embedded in a planar heterostructure of graphene. Ballistic Josephson coupling is confirmed by the Fabry-Perot-type interference of the junction critical current $I_c$. An exceptionally large $I_cR_N$ product close to $2Δ_0/e$ ($R_N$; normal-state junction resistance, $Δ_0$ ; zero-temperature superconducting energy gap) is an indication of SB strong Josephson coupling. $I_c$ shows a temperature dependence inconsistent with the conventional short-junction-like behavior; $I_c(T)$ curves deviate systematically from the standard Kulik-Omel'yanchuk prediction. We argue that this feature stems from the planar nature of graphene junction, which is susceptible to the effects of inhomogeneous carrier doping as well in graphene near the superconducting contacts.

cond-mat.mes-hall↗

arXiv2017

Proximity coupling in superconductor-graphene heterostructures

This review discusses the electronic properties and the prospective research directions of superconductor-graphene heterostructures. The basic electronic properties of graphene are introduced to highlight the unique possibility of combining two seemingly unrelated physics, superconductivity and relativity. We then focus on graphene-based Josephson junctions, one of the most versatile superconducting quantum devices. The various theoretical methods that have been developed to describe graphene Josephson junctions are examined, together with their advantages and limitations, followed by a discussion on the advances in device fabrication and the relevant length scales. The phase-sensitive properties and phase-particle dynamics of graphene Josephson junctions are examined to provide an understanding of the underlying mechanisms of Josephson coupling via graphene. Thereafter, microscopic transport of correlated quasiparticles produced by Andreev reflections at superconducting interfaces and their phase-coherent behaviors are discussed. Quantum phase transitions studied with graphene as an electrostatically tunable two-dimensional platform are reviewed. The interplay between proximity-induced superconductivity and the quantum-Hall phase is discussed as a possible route to study topological superconductivity and non-Abelian physics. Finally, a brief summary on the prospective future research directions is given.

cond-mat.mes-hall↗

arXiv2015

Continuous and reversible tuning of the disorder-driven superconductor-insulator transition in bilayer graphene

The influence of static disorder on a quantum phase transition (QPT) is a fundamental issue in condensed matter physics. As a prototypical example of a disorder-tuned QPT, the superconductor-insulator transition (SIT) has been investigated intensively over the past three decades, but as yet without a general consensus on its nature. A key element is good control of disorder. Here, we present an experimental study of the SIT based on precise in-situ tuning of disorder in dual-gated bilayer graphene proximity-coupled to two superconducting electrodes through electrical and reversible control of the band gap and the charge carrier density. In the presence of a static disorder potential, Andreev-paired carriers formed close to the Fermi level in bilayer graphene constitute a randomly distributed network of proximity-induced superconducting puddles. The landscape of the network was easily tuned by electrical gating to induce percolative clusters at the onset of superconductivity. This is evidenced by scaling behavior consistent with the classical percolation in transport measurements. At lower temperatures, the solely electrical tuning of the disorder-induced landscape enables us to observe, for the first time, a crossover from classical to quantum percolation in a single device, which elucidates how thermal dephasing engages in separating the two regimes.

cond-mat.supr-con↗

arXiv2015

Observation of negative refraction of Dirac fermions in graphene

Half a century ago, Veselago proposed left-handed materials with negative permittivity and permeability, in which waves propagate with phase and group velocities in opposite directions. Significant work has been undertaken to attain this left-handed response, such as establishing a negative refractive index in so-called metamaterials, which consist of periodic sub-wavelength structures. However, an electronic counterpart has not been demonstrated owing to difficulties in creating repeated structures smaller than the electronic Fermi wavelength (λ_F) of the order ~ 10 nm. Here, without needing to engineer sub-wavelength structures, we demonstrate negative refractive behaviour of Dirac fermions in graphene, exploiting its unique relativistic band structure. Analysis of both electron focusing through a n-p-n flat lens and negative refraction across n-p junctions confirms left-handed behaviour in the electronic system. This new approach to electronic optics is of particular relevance to the on-going efforts to develop novel quantum devices with emerging layered materials.

cond-mat.mes-hall↗

arXiv2013

Fano resonance in Raman scattering of graphene

Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge neutrality point as a manifestation of a Fano resonance, whereas the line shape is symmetric when the graphene sample is electron or hole doped. However, the G band of bilayer graphene (BLG) does not exhibit any Fano resonance regardless of doping. The observed Fano resonance can be interpreted as interferences between the phonon and excitonic many-body spectra in SLG. The absence of a Fano resonance in the Raman G band of BLG can be explained in the same framework since excitonic interactions are not expected in BLG.

cond-mat.mes-hall↗

arXiv2012

Gate-tuned Differentiation of Surface-conducting States in Bi1.5Sb0.5Te1.7Se1.3 Topological-insulator Thin Crystals

Using field-angle, temperature, and back-gate-voltage dependence of the weak anti-localization (WAL) and universal conductance fluctuations of thin Bi1.5Sb0.5Te1.7Se1.3 topological-insulator single crystals, in combination with gate-tuned Hall resistivity measurements, we reliably separated the surface conduction of the topological nature from both the bulk conduction and topologically trivial surface conduction. We minimized the bulk conduction in the crystals and back-gate tuned the Fermi level to the topological bottom-surface band while keeping the top surface insensitive to back-gating with the optimal crystal thickness of ~?100 nm. We argue that the WAL effect occurring by the coherent diffusive motion of carriers in relatively low magnetic fields is more essential than other transport tools such as the Shubnikov-de Hass oscillations for confirming the conduction by the topologically protected surface state. Our approach provides a highly coherent picture of the surface transport properties of TIs and a reliable means of investigating the fundamental topological nature of surface conduction and possible quantum-device applications related to momentum-locked spin polarization in surface states.

cond-mat.mes-hall↗

arXiv2012

Breakdown of the interlayer coherence in twisted bilayer graphene

Coherent motion of the electrons in the Bloch states is one of the fundamental concepts of the charge conduction in solid state physics. In layered materials, however, such a condition often breaks down for the interlayer conduction, when the interlayer coupling is significantly reduced by e.g. large interlayer separation. We report that complete suppression of coherent conduction is realized even in an atomic length scale of layer separation in twisted bilayer graphene. The interlayer resistivity of twisted bilayer graphene is much higher than the c-axis resistivity of Bernal-stacked graphite, and exhibits strong dependence on temperature as well as on external electric fields. These results suggest that the graphene layers are significantly decoupled by rotation and incoherent conduction is a main transport channel between the layers of twisted bilayer graphene.

cond-mat.mes-hall↗

arXiv2011

Ballistic transport of graphene pnp junctions with embedded local gates

We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither dielectric-material deposition nor electron-beam irradiation on the graphene, we obtained high-quality graphene pnp devices without degradation of the carrier mobility even in the local-gate region. The corresponding increased mean free path leads to the observation of ballistic and phase-coherent transport across a 130-nm-wide local gate, which is about an order of magnitude wider than reported previously. Furthermore, in our scheme, we demonstrated independent control of the carrier density in the local-gate region, with a conductance map very distinctive from top-gated devices. It was caused as the electric field arising from the global back gate is strongly screened by the embedded local gate. Our scheme allows the realization of ideal multipolar graphene junctions with ballistic carrier transport.

cond-mat.mes-hall↗

arXiv2011

Electrically Tunable Macroscopic Quantum Tunneling in a Graphene-based Josephson Junction

Stochastic switching-current distribution in a graphene-based Josephson junction exhibits a crossover from the classical to quantum regime, revealing the macroscopic quantum tunneling (MQT) of a Josephson phase particle at low temperatures. Microwave spectroscopy measurements indicate a multi-photon absorption process occurring via discrete energy levels in washboard potential well. The crossover temperature for MQT and the quantized level spacing are controlled with the gate voltage, implying its potential application to gate-tunable superconducting quantum bits.

cond-mat.mes-hall↗

arXiv2011

Absence of Tunneling Character in c-axis Transport of SmFeAsO0.85 Single Crystals

We made electrical transport measurements along the c-axis of SmFeAsO0.85 single crystals, in both three- and four-terminal configurations, focusing on examining the possible formation of Josephson coupling between FeAs superconducting layers. Anisotropic bulk superconductivity was observed along the c-axis, but without Josephson coupling, as confirmed by the absence of both the hysteresis in current-voltage curves and the modulation of the critical current by the in-plane magnetic fields. The variation of the critical currents for different magnetic-field directions gives the anisotropy ratio of 5. This three-dimensional electronic structure of our iron pnictide superconductors is in clear contrast to the two-dimensional one observed in the cuprate superconductors, another stacked superconducting system.

cond-mat.str-el↗

arXiv2011

Above-gap Conductance Anomaly Studied in Superconductor-graphene-superconductor Josephson Junctions

We investigated the electrical transport properties of superconductor-graphene-superconductor (SGS) Josephson junctions. In low voltage bias, we observed conventional proximity-coupled Josephson effect, such as the supercurrent flow through the graphene, sub-gap structure of differential conductance due to Andreev reflection, and periodic modulation of the critical current Ic with perpendicular magnetic field H to the graphene. In high bias above the superconducting gap voltage, however, we also observed an anomalous jump of the differential conductance, the voltage position of which is sensitive to the backgate voltage Vg. Our extensive study with varying Vg, temperature, and H reveals that the above-gap structure takes place at a characteristic power P*, which is irrespective of Vg for a given junction. Temperature and H dependences of P* are well explained by the increase of the electron temperature in graphene.

cond-mat.mes-hall↗

arXiv2011

Observation of Supercurrent in PbIn-Graphene-PbIn Josephson Junction

Superconductor-graphene-superconductor (SGS) junction provides a unique platform to study relativistic electrodynamics of Dirac fermions combined with proximity-induced superconductivity. We report observation of the Josephson effect in proximity-coupled superconducting junctions of graphene in contact with Pb1-xInx (x=0.07) electrodes for temperatures as high as T = 4.8K, with a large IcRn (~ 255 microV). This demonstrates that Pb1-xInx SGS junction would facilitate the development of the superconducting quantum information devices and superconductor-enhanced phase-coherent transport of graphene.

cond-mat.mes-hall↗

arXiv2010

Thermoelectric Transport of Massive Dirac Fermions in Bilayer Graphene

Thermoelectric power (TEP) is measured in bilayer graphene for various temperatures and charge-carrier densities. At low temperatures, measured TEP well follows the semiclassical Mott formula with a hyperbolic dispersion relation. TEP for a high carrier density shows a linear temperature dependence, which demonstrates a weak electron-phonon interaction in the bilayer graphene. For a low carrier density, a deviation from the Mott relation is observed at high temperatures and is attributed to the low Fermi temperature in the bilayer graphene. Oscillating TEP and the Nernst effect for varying carrier density, observed in a high magnetic field, are qualitatively explained by the two dimensionality of the system.

cond-mat.mes-hall↗

arXiv2009

Dependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet

By using four-terminal configurations, we investigated the dependence of longitudinal and diagonal resistances of a graphene p-n interface on the quantum-Hall edge-state equilibration position. The resistance of a p-n device in our four-terminal scheme is asymmetric with respect to the zero point where the filling factor ($ν$) of the entire graphene vanishes. This resistance asymmetry is caused by the chiral-direction-dependent change of the equilibration position and leads to a deeper insight into the equilibration process of the quantum-Hall edge states in a bipolar graphene system.

cond-mat.mes-hall↗