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Hu-Jong Lee

Publications and source records attributed to Hu-Jong Lee.

44 records · Page 3Linked to original sources

Collective resonance modes of Josephson vortices in sandwiched stack of Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$ intrinsic Josephson junctions

We observed splitting of the low-bias vortex-flow branch in a dense-Josephson-vortex state into multiple sub-branches in current-voltage characteristics of intrinsic Josephson junctions (IJJs) of Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$ single crystals in the long-junction limit. Each sub-branch corresponds to a plasma mode in serially coupled Josephson junctions. Splitting into low-bias linear sub-branches with a spread in the slopes and the inter-sub-branch mode-switching character are in good quantitative agreement with the prediction of the weak but finite inter-junction capacitive-coupling model incorporated with the inductive coupling. This suggests the importance of the role of the capacitive coupling in accurately describing the vortex dynamics in serially stacked IJJs.

cond-mat.supr-con↗

Phase coherent transport in Kondo/superconducting hybrid structures

We present measurements of the transport properties of hybrid structures consisting of a Kondo AuFe film and a superconducting Al film. The temperature dependence of the resistance indicates the existence of the superconducting proximity effect in the Kondo AuFe wires over the range of $\sim0.5$ $μ$m. Electronic phase coherence in the Kondo AuFe wires has been confirmed by observing the Aharanov-Bohm effect in the magnetoresistance of the loop structure. The amplitude of the magnetoresistance oscillations shows a reentrant behavior with a maximum at $\sim$ 870 mK, which results from an interplay between the Kondo effect and the superconducting proximity effect.

cond-mat.mes-hall↗

Microwave distribution in stacked Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$ intrinsic Josephson junctions in a transmission-line geometry

The microwave distribution inside a rectangular stack (15 $μ$m$\times$0.72 $μ$m$\times$60 nm) of Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$ intrinsic Josephson junctions (IJJs) was studied. The stack was microfabricated into a transmission-line geometry, with a few hundred nm thick Au layers deposited on top and bottom of the stack. The microwave distribution was monitored by measuring the anomalous suppression of the tunneling critical current of the IJJs with varied microwave power at frequencies in the W band. This technique can provide valuable information on the microwave transmission modes inside the sandwiched stack of IJJs, which is utterly important for the high-frequency device applications using IJJs, such as fluxon-flow THz oscillators.

cond-mat.supr-con↗

Observation of Andreev reflection in the c-axis transport of Bi_2Sr_2CaCu_2O_{8+x} single crystals near T_c and search for the preformed-pair state

We observed an enhancement of the $c$-axis differential conductance around the zero-bias in Au$/$Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (Bi2212) junctions near the superconducting transition temperature $T_c$. We attribute the conductance enhancement to the Andreev reflection between the surface Cu-O bilayer with suppressed superconductivity and the neighboring superconducting inner bilayer. The continuous evolution from depression to an enhancement of the zero-bias differential conductance, as the temperature approaches $T_c$ from below, points to weakening of the barrier strength of the non-superconducting layer between adjacent Cu-O bilayers. We observed that the conductance enhancement persisted up to a few degrees above $T_c$ in junctions prepared on slightly overdoped Bi2212 crystals. However, no conductance enhancement was observed above $T_c$ in underdoped crystals, although recently proposed theoretical consideration suggests an even wider temperature range of enhanced zero-bias conductance. This seems to provide negative perspective to the existence of the phase-incoherent preformed pairs in the pseudogap state.

cond-mat.supr-con↗

The resistance anomaly in the surface layer of Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ single crystals under radio-frequency irradiation

We observed that radio-frequency (rf) irradiation significantly enhances the $c$-axis resistance near and below the superconducting transition of the CuO$_{2}$ layer in contact with a normal-metal electrode on the surface of Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$ single crystals. We attribute the resistance anomaly to the rf-induced charge-imbalance nonequilibrium effect in the surface CuO$_{2}$ layer. The relaxation of the charge-imbalance in this highly anisotropic system is impeded by the slow quasiparticle recombination rate, which results in the observed excessive resistance.

cond-mat.supr-con↗

Microwave-induced constant voltage steps in surface junctions of Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} single crystals

We have observed the zero-crossing steps in a surface junction of a mesa structure micro-fabricated on the surface of a Bi-2212 single crystal. With the application of microwave of frequencies 76 and 94 GHz, the current-voltage characteristics show clear voltage steps satisfying the ac Josephson relation. Increasing the microwave power, the heights of the steps show the Bessel-function behavior up to step number n=4. We confirm that the intrinsic surface junction meets the criterion for the observation of zero-crossing steps.

cond-mat.supr-con↗

Progressive evolution of tunneling characteristics of in-situ fabricated intrinsic Josephson junctions in Bi_2Sr_2CaCu_2O_{8+delta} single crystals

Stacks of a few intrinsic tunnel junctions were micro-fabricated on the surface of Bi-2212 single crystals. The number of junctions in a stack was tailored by progressively increasing the height of the stack by ion-beam etching, while its tunneling characteristics were measured in-situ in a vacuum chamber for temperatures down to ~13 K. Using this in-situ etching/measurements technique in a single piece of crystal, we systematically excluded any spurious effects arising from variations in the junction parameters and made clear analysis on the following properties of the surface and inner conducting planes. First, the tunneling resistance and the current-voltage curves are scaled by the surface junction resistance. Second, we confirm that the reduction in both the gap and the superconducting transition temperature of the surface conducting plane in contact with a normal metal is not caused by the variation in the doping level, but is caused by the proximity contact. Finally, the main feature of a junction is not affected by the presence of other junctions in a stack in a low bias region.

cond-mat.supr-con↗

Suppressed Superconductivity of the Surface Conduction Layer in Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ Single Crystals Probed by {\it c}-Axis Tunneling Measurements

We fabricated small-size stacks on the surface of Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (BSCCO-2212) single crystals with the bulk transition temperature $T_c$$\simeq$90 K, each containing a few intrinsic Josephson junctions. Below a critical temperature $T_c'$ ($\ll$ $T_c$), we have observed a weakened Josephson coupling between the CuO$_2$ superconducting double layer at the crystal surface and the adjacent one located deeper inside a stack. The quasiparticle branch in the $IV$ data of the weakened Josephson junction (WJJ) fits well to the tunneling characteristics of a d-wave superconductor($'$)/insulator/d-wave superconductor (D$'$ID) junction. Also, the tunneling resistance in the range $T_c'$$<$$T$$<$$T_c$ agrees well with the tunneling in a normal metal/insulator/d-wave superconductor (NID) junction. In spite of the suppressed superconductivity at the surface layer the symmetry of the order parameter appears to remain unaffected.

cond-mat.supr-con↗