Hua Ling | Searcharxiv

arXiv2017

Effect of Notch Structure on Magnetic Domain Movement in Planar Nanowires

We present the direct observation of magnetic domain motion in permalloy nanowires with notches using a wide-field Kerr microscopy technique. The domain wall motion can be modulated by the size and shape of the notch structure in the nanowires. It is demonstrated that the coercive fields can be tuned by modulating the notches. The experimental results are consistent with the micro-magnetic simulation results. The relationship between the notch angle and the domain nuclease are also studied. This work is useful for the design and development of the notch-based spintronic devices.

cond-mat.mes-hall↗

arXiv2017

Magnetic Domain Wall Engineering in a Nanoscale Permalloy Junction

Nanoscale magnetic junction provides a useful approach to act as the building block for magnetoresistive random access memories (MRAM), where one of the key issues is to control the magnetic domain configuration. Here, we study the domain structure and the magnetic switching in the Permalloy (Fe20Ni80) nanoscale magnetic junctions with different thicknesses by using micromagnetic simulations. It is found that both the 90-degree and 45-degree domain walls can be formed between the junctions and the wire arms depending on the thickness of the device. The magnetic switching fields show distinct thickness dependencies with a broad peak varying from 7 nm to 22 nm depending on the junction sizes, and the large magnetic switching fields favor the stability of the MRAM operation.

physics.comp-ph↗