arXiv subjects

Huabing Wang

Publications and source records attributed to Huabing Wang.

23 records · Page 2Linked to original sources

arXiv2021

Tailoring magnetization reversal of a single-domain bar nanomagnet via its end geometry

Nanoscale single-domain bar magnets are building blocks for a variety of fundamental and applied mesoscopic magnetic systems, such as artificial spin ices, magnetic shape-morphing microbots as well as magnetic majority logic gates. The magnetization reversal switching field of the bar nanomagnets is a crucial parameter that determines the physical properties and functionalities of their constituted artificial systems. Previous methods on tuning the magnetization reversal switching field of a bar nanomagnet usually rely on modifying its aspect ratio, such as its length, width and/or thickness. Here, we show that the switching field of a bar nanomagnet saturates when extending its length beyond a certain value, preventing further tailoring of the magnetization reversal via aspect ratios. We showcase highly tunable switching field of a bar nanomagent by tailoring its end geometry without altering its size. This provides an easy method to control the magnetization reversal of a single-domain bar nanomagnet. It would enable new research and/or applications, such as designing artificial spin ices with additional tuning parameters, engineering magnetic microbots with more flexibility as well as developing magnetic quantum-dot cellular automata systems for low power computing.

cond-mat.mes-hall↗

arXiv2020

Reconfigurable pinwheel artificial-spin-ice and superconductor hybrid device

The ability to control the potential landscape in a medium of interacting particles could lead to intriguing collective behavior and innovative functionalities. Here, we utilize spatially reconfigurable magnetic potentials of a pinwheel artificial spin ice structure to tailor the motion of superconducting vortices. The reconstituted chain structures of the magnetic charges in the artificial pinwheel spin ice and the strong interaction between magnetic charges and superconducting vortices allow significant modification of the transport properties of the underlying superconducting thin film, resulting in a reprogrammable resistance state that enables a reversible and switchable vortex Hall effect. Our results highlight an effective and simple method of using artificial spin ice as an in-situ reconfigurable nanoscale energy landscape to design reprogrammable superconducting electronics, which could also be applied to the in-situ control of properties and functionalities in other magnetic particle systems, such as magnetic skyrmions.

cond-mat.supr-con↗

arXiv2017

Superconducting (Li, Fe)OHFeSe film of high quality and high critical parameters

The superconducting film of (Li1-xFex)OHFeSe is reported for the first time. The thin film exhibits a small in-plane crystal mosaic of 0.22 deg, in terms of the FWHM (full-width-at-half-maximum) of x-ray rocking curve, and an excellent out-of-plane orientation by x-ray phi-scan. Its bulk superconducting transition temperature (Tc) of 42.4 K is characterized by both zero electrical resistance and diamagnetization measurements. The upper critical field (Hc2) is estimated to be 79.5 T and 443 T, respectively, for the magnetic field perpendicular and parallel to the ab plane. Moreover, a large critical current density (Jc) of a value over 0.5 MA/cm2 is achieved at ~20 K. Such a (Li1-xFex)OHFeSe film is therefore not only important to the fundamental research for understanding the high-Tc mechanism, but also promising in the field of high-Tc superconductivity application, especially in high-performance electronic devices and large scientific facilities such as superconducting accelerator.

cond-mat.supr-con↗

arXiv2017

Promoting superconductivity in FeSe films via fine manipulation of crystal lattice

Stabilized FeSe thin films in ambient pressure with tunable superconductivity would be a promising candidate for superconducting electronic devices yet its superconducting transition temperature (Tc) is below 10 K in bulk materials. By carefully controlling the depositions on twelve kinds of substrates using pulsed laser deposition technique, high quality single crystalline FeSe samples were fabricated with full width of half maximum 0.515? in the rocking curve and clear four-fold symmetry in phi-scan from x-ray diractions. The films have a maximum Tc 15 K on the CaF2 substrate and do not show obvious decay in the air for more than half a year. Slightly tuning the stoichiometry of the FeSe targets, the Tc becomes adjustable from 15 to < 2 K with quite narrow transition widths less than 2 K, and shows a positive relation with the out-of-plane (c-axis) lattice parameter of the films. However, there is no clear relation between the Tc and the surface atomic distance of the substrates. By reducing the thickness of the films, the Tc decreases and fades away in samples of less than 10 nm, suggesting that the strain effect is not responsible for the enhancement of Tc in our experiments.

cond-mat.supr-con↗

arXiv2016

3D simulations of the electrothermal and THz emission properties of Bi$_2$Sr$_2$CaCu$_2$O$_8$ intrinsic Josephson junction stacks

We used 2D coupled sine-Gordon equations combined with 3D heat diffusion equations to numerically investigate the thermal and electromagnetic properties of a $250 \times 70\,μ\mathrm{m}^2$ intrinsic Josephson junction stack. The 700 junctions are grouped to 20 segments; we assume that in a segment all junctions behave identically. At large input power a hot spot forms in the stack. Resonant electromagnetic modes, oscillating either along the length ((0, $n$) modes) or the width (($m$, 0) modes) of the stack or having a more complex structure, can be excited both with and without a hot spot. At fixed bath temperature and bias current several cavity modes can coexist in the absence of a magnetic field. The (1, 0) mode, considered to be the most favorable mode for THz emission, can be stabilized by applying a small magnetic field along the length of the stack. A strong field-induced enhancement of the emission power is also found in experiment, for an applied field around 5.9 mT.

cond-mat.supr-con↗